SK80GB063 $ ( )* +, Absolute Maximum Ratings Symbol Conditions IGBT -.% $/ ( )* + " $/ ( 3)* + "78 122 - 43 5 $ ( 42 + *6 5 )22 5 : )2 - $/ ( 3)* + 32 ? $ ( )* + 6A 5 $ ( 42 + *; 5 3*2 5 6)2 5 "78( ) " - ( ;22 -< -9. = )2 -< -.% > 122 - Units $ ( )* + -9.% SEMITOP® 3 Values Inverse Diode IGBT Module SK80GB063 "@ $/ ( 3*2 + "@78 "@78( ) "@ "@%8 ( 32 < & $/ ( 3*2 + Module "78% Preliminary Data 5 $&/ $ Features ! " #$ Typical Applications* % "& % '#% - 5, 3 D -9. ( -., " ( 3,* 5 ".% -9. ( 2 -, -. ( -.% + BC2 DDD E3)* + )*22 - $ ( )* +, Characteristics Symbol Conditions IGBT -9. BC2 DDD E3*2 min. typ. max. C,* *,* 1,* - 2,; 5 $/ ( )* + $/ ( 3)* + "9.% -. ( 2 -, -9. ( ;2 - 5 $/ ( )* + ;22 $/ ( 3)* + -.2 . -. -9. ( 3* - $/ ( 3)* + 3,3 - $/ ( )*+ 33 F $/ ( 3)*+ A F . -9.( 2 DDD )2 79 ( 32 F 79 ( 32 F . 7/B "9$ - ),3 ),* ) ),; - ( ;22"( 3225 $/ ( 3)* + -9.(:3*- - C,; @ @ 2,C @ ;32 *2 C2 C ;22 ;* I ; I ( 3 8G H9 5 3 " ( 322 5, -9. ( 3* - $/ ( )*+ &D -. ( )*, -9. ( 2 - 5 $/ ( )* + $/ ( 3)*+ &D Units 2,1 JKL GB 1 17-11-2006 DIL © by SEMIKRON SK80GB063 Characteristics Symbol Conditions Inverse Diode -@ ( -. SEMITOP® 3 IGBT Module "@ ( 12 5< -9. ( 2 - min. $/ ( )* + &D typ. max. 3,C Units - $/ ( 3)* + &D 3,; -@2 $/ ( 3)* + 2,4* 2,A - @ $/ ( 3)* + 1,* 33 F $/ ( 3)* + A2 6 5 ? 3,) I "778 H "@ ( 12 5 K ( B;222 5K? . -( ;22- 7/B 8 M 83 ),)* ;2 - 2,A JKL ),* N SK80GB063 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Preliminary Data Features * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. ! " #$ Typical Applications* % "& % '#% GB 2 17-11-2006 DIL © by SEMIKRON SK80GB063 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 17-11-2006 DIL © by SEMIKRON SK80GB063 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 17-11-2006 DIL © by SEMIKRON SK80GB063 UL recognized file no. E 63 532 $)1 % , #, O ) $ )1 5 9 17-11-2006 DIL © by SEMIKRON