SK30GAD066T Absolute Maximum Ratings Symbol Conditions IGBT 23% 4 # 4 - *7/ 0 #9: - ./ 01 - ./ 0 566 2 ,8 + - 76 0 ,* + 56 + < .6 2 5 @ #9:- . # 2 - ,56 2= 2;3 > .6 2= 23% ? 566 2 Units - ./ 0 2;3% SEMITOP® 3 Values 4 - *./ 0 - ./ 0 + - 86 0 + Inverse Diode IGBT Module #A #A9: SK30GAD066T - */6 0 #A9:- . #A + Freewheeling Diode #A Target Data 4 #A9: 4 - *7/ 0 - ./ 0 5/ + - 76 0 /* + .66 + #A9: - . #A Module Features ! " # $ Typical Applications* % #& % '$% Remarks $ ( (* + &( , + #9:% + &4 BC6 DDD E*7/ 0 BC6 DDD E*./ 0 ./66 2 2 +1 * D Characteristics Symbol Conditions IGBT 2;3 2;3 - 231 # - 61C, + #3% 2;3 - 6 21 23 - 23% #;3% 23 - 6 21 2;3 - ,6 2 - ./ 01 min. typ. / /18 4 - ./ 0 4 - *./ 0 4 - ./ 0 max. 51/ 2 6168 + + ,66 4 - *./ 0 236 4 - ./ 0 4 3 23 2;3 - */ 2 # - ,6 +1 2;3 - */ 2 23 - ./1 2;3 - 6 2 - */6 0 4 - ./0 + * 618/ 61F 2 *8 .8 G .7 ,8 G 2 4 - */60 4 - ./0 &D *1C/ *18/ 4 - */60 &D *15/ .16/ 2 2 A A - * :H A 9; - .. G 9; - .. G 3 94B + 61F 3 Units #; 2 - ,662 #- ,6+ 4 - */6 0 2;3-<*/2 *1.C I *1C8 I *18 JKL GAD 1 26-02-2009 DIL © by SEMIKRON SK30GAD066T Characteristics Symbol Conditions Freewheeling Diode 2A - 23 SEMITOP® 3 IGBT Module #A - ,6 += 2;3 - 6 2 min. 4 - ./ 0 &D 4 - *./ 0 &D typ. max. Units *1, *1/ 2 *1. *1C/ 2 2A6 4 - *./ 0 618/ 61F 2 A 4 - *./ 0 F *5 G 4 - *./ 0 , , + @ 61CC I #99: M #A - ,6 + K - B/66 +K@ 3 2- ,662 94BA : N :* .1./ *1. JKL .1/ O ,6 *666 *576 G Temperature sensor SK30GAD066T 9 ,P1 - ./ *660 Target Data Features ! " # $ This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. Typical Applications* % #& % '$% Remarks $ ( (* + &( , + GAD 2 26-02-2009 DIL © by SEMIKRON SK30GAD066T Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 26-02-2009 DIL © by SEMIKRON SK30GAD066T Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 26-02-2009 DIL © by SEMIKRON SK30GAD066T /7 % 1 $1 ( . 5 /7 ;+ 26-02-2009 DIL © by SEMIKRON