INTERSIL HGTG40N60A4

HGTG40N60A4
TM
Data Sheet
April 2000
File Number
600V, SMPS Series N-Channel IGBT
Features
The HGTG40N60A4 is a MOS gated high voltage switching
device combining the best features of a MOSFET and a
bipolar transistor. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop
varies only moderately between 25oC and 150oC. This IGBT
is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
• 100kHz Operation At 390V, 40A
4782.2
• 200kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at TJ = 125o
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
Formerly Developmental Type TA49347.
C
G
Ordering Information
PART NUMBER
PACKAGE
HGTG40N60A4
TO-247
BRAND
40N60A4
COLLECTOR
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
4-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
HGTG40N60A4
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
HGTG40N60A4
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
600
V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
75
63
300
±20
±30
200A at 600V
625
5
-55 to 150
260
A
A
A
V
V
W
W/oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
TJ = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
600
-
-
Emitter to Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
20
-
-
TJ = 25oC
-
-
250
µA
TJ = 125oC
-
-
3.0
mA
TJ = 25oC
-
1.7
2.7
V
TJ = 125oC
-
1.5
2.0
V
4.5
5.6
7
V
-
-
±250
nA
200
-
-
A
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
ICES
VCE(SAT)
VGE(TH)
VCE = BVCES
IC = 40A,
VGE = 15V
IC = 250µA, VCE = VGE
IGES
VGE = ±20V
Switching SOA
SSOA
TJ = 150oC, RG = 2.2Ω, VGE = 15V
L = 100µH, VCE = 600V
Gate to Emitter Plateau Voltage
VGEP
IC = 40A, VCE = 0.5 BVCES
-
8.5
-
V
IC = 40A,
VCE = 0.5 BVCES
VGE = 15V
-
350
405
nC
VGE = 20V
-
450
520
nC
-
25
-
ns
-
18
-
ns
-
145
-
ns
-
35
-
ns
Gate to Emitter Leakage Current
On-State Gate Charge
Qg(ON)
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
IGBT and Diode at TJ = 25oC
ICE = 40A
VCE = 0.65 BVCES
VGE = 15V
RG = 2.2Ω
L = 200µH
Test Circuit (Figure 20)
Turn-On Energy (Note 3)
EON1
-
400
-
µJ
Turn-On Energy (Note 3)
EON2
-
850
-
µJ
Turn-Off Energy (Note 2)
EOFF
-
370
-
µJ
4-2
HGTG40N60A4
TJ = 25oC, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
SYMBOL
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
TEST CONDITIONS
IGBT and Diode at TJ = 125oC
ICE = 40A
VCE = 0.65 BVCES
VGE = 15V
RG = 2.2Ω
L = 200µH
Test Circuit (Figure 20)
MIN
TYP
MAX
UNITS
-
27
-
ns
-
20
-
ns
-
185
225
ns
-
55
95
ns
Turn-On Energy (Note 3)
EON1
-
400
-
µJ
Turn-On Energy (Note 3)
EON2
-
1220
1400
µJ
Turn-Off Energy (Note 2)
EOFF
-
700
800
µJ
0.2
oC/W
Thermal Resistance Junction To Case
RθJC
-
-
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20.
Unless Otherwise Specified
ICE , DC COLLECTOR CURRENT (A)
80
VGE = 15V
70
PACKAGE LIMITED
60
50
40
30
20
10
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
4-3
150
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
225
TJ = 150oC, RG = 2.2Ω, VGE = 15V, L = 100µH
200
175
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
HGTG40N60A4
Unless Otherwise Specified (Continued)
TC
75oC
200
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
fMAX, OPERATING FREQUENCY (kHz)
300
VGE
15V
100
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.2oC/W, SEE NOTES
RG = 2.2Ω, L = 200µH, VCE = 390V
10
3
10
40
12
1000
10
ISC
8
800
6
600
tSC
4
400
2
200
10
70
11
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
60
50
TJ = 125oC
40
30
TJ = 25oC
20
TJ = 150oC
10
0
0
0.2
0.4
0.6
1.0
0.8
1.2
1.4
1.6
1.8
2.0
80
60
50
TJ = 125oC
40
30
20
10
0
0
0.2
0.4
TJ = 125oC, VGE = 12V, VGE = 15V
3500
3000
2500
2000
1500
1000
0
0
TJ = 25oC, VGE = 12V, VGE = 15V
10
20
30
40
50
60
70
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4-4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
EOFF, TURN-OFF ENERGY LOSS (µJ)
EON2 , TURN-ON ENERGY LOSS (µJ)
4500
500
TJ = 25oC
TJ = 150oC
1800
RG = 2.2Ω, L = 200µH, VCE = 390V
4000
16
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5500
15
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
70
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
5000
14
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
70
13
12
VGE , GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
80
1200
VCE = 390V, RG = 2.2Ω, TJ = 125oC
ISC, PEAK SHORT CIRCUIT CURRENT (A)
Typical Performance Curves
80
RG = 2.2Ω, L = 200µH, VCE = 390V
1600
1400
TJ = 125oC, VGE = 12V OR 15V
1200
1000
800
600
400
TJ = 25oC, VGE = 12V OR 15V
200
0
0
10
20
30
40
50
60
70
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
80
HGTG40N60A4
Typical Performance Curves
120
RG = 2.2Ω, L = 200µH, VCE = 390V
40
TJ = 25oC, TJ = 125oC, VGE = 15V
38
36
34
32
30
28
26
TJ = 125oC, TJ = 25oC, VGE = 12V
80
60
40
20
24
22
RG = 2.2Ω, L = 200µH, VCE = 390V
100
trI , RISE TIME (ns)
td(ON)I, TURN-ON DELAY TIME (ns)
42
Unless Otherwise Specified (Continued)
TJ = 25oC, TJ = 125oC, VGE = 15V
0
10
20
30
40
50
60
70
TJ = 25oC, TJ = 125oC, VGE = 15V
0
80
0
10
20
30
40
50
60
70
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
70
RG = 2.2Ω, L = 200µH, VCE = 390V
180
170
VGE = 12V, VGE = 15V, TJ = 125oC
160
150
TJ = 125oC, VGE = 12V OR 15V
60
55
50
45
40
VGE = 12V OR 15V, TJ = 25oC
140
130
RG = 2.2Ω, L = 200µH, VCE = 390V
65
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
190
TJ = 25oC, VGE = 12V OR 15V
35
30
0
10
20
40
30
50
60
70
80
0
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
16
VGE, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
300
250
200
TJ = -55oC
150
30
40
50
60
70
80
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
400
350
20
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
80
TJ = 125oC
TJ = 25oC
100
50
IG(REF) = 1mA, RL = 7.5Ω, TC = 25oC
14
12
VCE = 600V
VCE = 400V
10
8
VCE = 200V
6
4
2
0
0
6
7
8
9
10
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
4-5
11
0
50
100
150
200
250
300
QG , GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
350
400
HGTG40N60A4
6
Unless Otherwise Specified (Continued)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
Typical Performance Curves
TJ = 125oC, L = 200µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
5
ICE = 80A
4
3
2
ICE = 40A
1
ICE = 20A
0
25
50
125
75
100
TC , CASE TEMPERATURE (oC)
150
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FREQUENCY = 1MHz
C, CAPACITANCE (nF)
12
10
CIES
6
4
COES
2
CRES
0
0
10
20
30
40
50
60
70
TJ = 125oC, L = 200µH
VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
10
ICE = 80A
ICE = 40A
1
ICE = 20A
0.1
1
80
90
100
2.4
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs, TJ = 25oC
2.3
2.2
ICE = 80A
2.1
ICE = 40A
2.0
ICE = 20A
1.9
8
9
11
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
12
13
14
15
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs
GATE TO EMITTER VOLTAGE
100
0.50
0.20
t1
0.10
10-1
PD
t2
0.05
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.02
0.01
SINGLE PULSE
10-2 -5
10
10-4
10-3
10-2
10-1
100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 19. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
4-6
16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
ZθJC , NORMALIZED THERMAL RESPONSE
500
10
100
RG, GATE RESISTANCE (Ω)
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
14
8
100
101
HGTG40N60A4
Test Circuit and Waveforms
HGT1Y40N60A4D
90%
10%
VGE
EON2
EOFF
L = 200µH
VCE
RG = 2.2Ω
90%
+
-
ICE
VDD = 390V
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
4-7
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 3) and the
conduction losses (PC) are approximated by PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 21. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss (ICE x
VCE) during turn-off. All tail losses are included in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).
ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.
HGTG40N60A4
TO-247
3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
A
E
SYMBOL
ØP
Q
ØR
D
L1
b1
b2
c
3
3
2
J1
e
MAX
MILLIMETERS
MIN
MAX
NOTES
0.180
0.190
4.58
4.82
-
b
0.046
0.051
1.17
1.29
2, 3
b1
0.060
0.070
1.53
1.77
1, 2
b2
0.095
0.105
2.42
2.66
1, 2
c
0.020
0.026
0.51
0.66
1, 2, 3
D
0.800
0.820
20.32
20.82
-
E
0.605
0.625
15.37
15.87
e1
b
MIN
A
e
L
1
INCHES
TERM. 4
ØS
0.219 TYP
0.438 BSC
5.56 TYP
11.12 BSC
4
4
J1
0.090
0.105
2.29
2.66
1
L
0.620
0.640
15.75
16.25
-
BACK VIEW
L1
0.145
0.155
3.69
3.93
1
2
e1
5
ØP
0.138
0.144
3.51
3.65
-
Q
0.210
0.220
5.34
5.58
-
ØR
0.195
0.205
4.96
5.20
-
ØS
0.260
0.270
6.61
6.85
-
NOTES:
1. Lead dimension and finish uncontrolled in L1.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bottom
of dimension D.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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4-8
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