HGT5A40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49347. The diode used in anti-parallel is the development type 49374. File Number 4783.1 Features • 100kHz Operation at 390V, 40A • 200kHz Operation at 390V, 20A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at TJ = 125o • Low Conduction Loss Packaging JEDEC STYLE STRETCH TO-247 This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. E C G Formerly Developmental Type TA49349. Ordering Information PART NUMBER PACKAGE HGT5A40N60A4D TO-247-ST COLLECTOR (FLANGE) BRAND 40N60A4D NOTE: When ordering, use the entire part number. Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 2-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGT5A40N60A4D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES HGT5A40N60A4D UNITS 600 V 75 A Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 63 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 300 A Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC 200A at 600V 625 W 5 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications TJ = 25oC, Unless Otherwise Specified PARAMETER SYMBOL Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage BVCES ICES VCE(SAT) VGE(TH) TEST CONDITIONS IC = 250µA, VGE = 0V VCE = BVCES IC = 40A, VGE = 15V TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC IC = 250µA, VCE = VGE MIN TYP MAX UNITS 600 - - V - - 250 µA - - 3.0 mA - 1.7 2.7 V - 1.5 2.0 V 4.5 5.6 7 V - - ±250 nA 200 - - A IGES VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 2.2Ω, VGE = 15V L = 100µH, VCE = 600V Gate to Emitter Plateau Voltage VGEP IC = 40A, VCE = 0.5 BVCES - 8.5 - V IC = 40A, VCE = 0.5 BVCES VGE = 15V - 350 405 nC VGE = 20V - 450 520 nC - 25 - ns - 18 - ns - 145 - ns - 35 - ns - 400 - µJ Gate to Emitter Leakage Current On-State Gate Charge Qg(ON) Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI IGBT and Diode at TJ = 25oC ICE = 40A VCE = 0.65 BVCES VGE =15V RG= 2.2Ω L = 200µH Test Circuit (Figure 24) Turn-On Energy (Note 2) EON1 Turn-On Energy (Note 2) EON2 - 850 - µJ Turn-Off Energy (Note 3) EOFF - 370 - µJ 2-2 HGT5A40N60A4D Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS IGBT and Diode at TJ = 125oC ICE = 40A VCE = 0.65 BVCES VGE = 15V RG= 2.2Ω L = 200µH Test Circuit (Figure 24) MIN TYP MAX UNITS - 27 - ns - 20 - ns - 185 225 ns - 55 95 ns - 400 - µJ Turn-On Energy (Note 2) EON1 Turn-On Energy (Note 2) EON2 - 1220 1400 µJ Turn-Off Energy (Note 3) EOFF - 700 800 µJ Diode Forward Voltage VEC IEC = 40A - 2.25 2.7 V IEC = 40A, dIEC/dt = 200A/µs - 48 55 ns IEC = 1A, dIEC/dt = 200A/µs - 38 45 ns IGBT - - 0.2 oC/W Diode - - 1 oC/W Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC NOTES: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 24. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 80 VGE = 15V 70 PACKAGE LIMITED 60 50 40 30 20 10 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 2-3 150 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 225 TJ = 150oC, RG = 2.2Ω, VGE = 15V, L = 100µH 200 175 150 125 100 75 50 25 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGT5A40N60A4D fMAX, OPERATING FREQUENCY (kHz) 300 TC VGE 75oC 15V 200 100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.2oC/W, SEE NOTES RG = 2.2Ω, L = 200µH, VCE = 390V 10 3 10 40 70 (Continued) 12 1200 VCE = 390V, RG = 2.2Ω, TJ = 125oC 1000 10 ISC 8 800 6 600 tSC 400 4 2 10 11 ICE, COLLECTOR TO EMITTER CURRENT (A) 60 50 TJ = 125oC 30 TJ = 25oC TJ = 150oC 10 0 0 0.4 0.2 0.6 0.8 1.0 1.2 1.6 1.4 1.8 2.0 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs 20 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 70 60 50 40 TJ = 125oC 30 TJ = 150oC 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 5500 1800 RG = 2.2Ω, L = 200µH, VCE = 390V EOFF, TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (µJ) TJ = 25oC 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 4500 TJ = 125oC, VGE = 12V, VGE = 15V 4000 3500 3000 2500 2000 1500 1000 500 0 0 200 16 15 14 80 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 5000 13 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 80 40 12 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 70 ISC, PEAK SHORT CIRCUIT CURRENT (A) Unless Otherwise Specified tSC , SHORT CIRCUIT WITHSTAND TIME (µs) Typical Performance Curves TJ = 25oC, VGE = 12V, VGE = 15V 1400 20 30 40 50 60 70 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 2-4 80 TJ = 125oC, VGE = 12V OR 15V 1200 1000 800 600 400 TJ = 25oC, VGE = 12V OR 15V 200 0 10 RG = 2.2Ω, L = 200µH, VCE = 390V 1600 0 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGT5A40N60A4D Typical Performance Curves Unless Otherwise Specified (Continued) 120 RG = 2.2Ω, L = 200µH, VCE = 390V 40 RG = 2.2Ω, L = 200µH, VCE = 390V TJ = 25oC, TJ = 125oC, VGE = 15V 38 100 trI , RISE TIME (ns) td(ON)I, TURN-ON DELAY TIME (ns) 42 36 34 32 30 28 26 80 60 40 20 24 22 TJ = 125oC, TJ = 25oC, VGE = 12V TJ = 25oC, TJ = 125oC, VGE = 15V 0 10 20 30 40 50 60 70 0 80 TJ = 25oC, TJ = 125oC, VGE = 15V 0 ICE , COLLECTOR TO EMITTER CURRENT (A) 50 60 70 80 RG = 2.2Ω, L = 200µH, VCE = 390V VGE = 12V, VGE = 15V, TJ = 125oC 160 150 55 50 45 40 VGE = 12V OR 15V, TJ = 25oC 140 TJ = 125oC, VGE = 12V OR 15V 60 TJ = 25oC, VGE = 12V OR 15V 35 30 0 10 20 30 40 50 60 70 80 FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 16 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs 300 250 200 TJ = -55oC 150 TJ = 125oC TJ = 25oC 100 50 6 7 8 9 10 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC 2-5 10 20 30 40 50 60 70 80 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 400 350 0 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 40 65 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 70 RG = 2.2Ω, L = 200µH, VCE = 390V 170 0 30 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 180 130 20 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 190 10 11 IG(REF) = 1mA, RL = 7.5Ω, TC = 25oC 14 12 VCE = 600V VCE = 400V 10 8 VCE = 200V 6 4 2 0 0 50 100 150 200 250 300 350 QG , GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS 400 HGT5A40N60A4D Unless Otherwise Specified 6 TJ = 125oC, L = 200µH, VCE = 390V, VGE = 15V ETOTAL = EON2 +EOFF 5 ICE = 80A 4 3 2 ICE = 40A 1 0 ICE = 20A 50 25 75 100 125 150 (Continued) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) Typical Performance Curves 100 TJ = 125oC, L = 200µH VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 10 ICE = 80A ICE = 40A 1 ICE = 20A 0.1 1 10 TC , CASE TEMPERATURE (oC) FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE 14 FREQUENCY = 1MHz C, CAPACITANCE (nF) 12 10 8 CIES 6 4 COES 2 CRES 0 10 20 30 40 50 60 70 80 90 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE 0 2.4 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs, TJ = 25oC 2.3 2.2 ICE = 80A 2.1 ICE = 40A 2.0 ICE = 20A 1.9 8 9 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 120 DUTY CYCLE < 0.5%, PULSE DURATION = 250µs trr, RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) 12 13 14 40 TJ = 125oC 30 25 20 TJ = 25oC 100 80 70 125oC tb 125oC ta 60 25oC trr 50 40 30 25oC ta 5 10 25oC tb 0 0 0.5 1.0 1.5 2.0 VEC , FORWARD VOLTAGE (V) FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP 2-6 16 125oC trr 90 20 10 0 15 dIEC/dt = 200A/µs 110 15 11 FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE 50 35 10 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 45 500 100 RG, GATE RESISTANCE (Ω) 2.5 0 5 10 15 20 25 30 35 40 IEC , FORWARD CURRENT (A) FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT HGT5A40N60A4D Typical Performance Curves Unless Otherwise Specified (Continued) IEC = 40A, VCE = 390V 65 trr, RECOVERY TIMES (ns) Qrr, REVERSE RECOVERY CHARGE (nc) 70 125oC ta 60 55 50 45 125oC 40 tb 35 30 25 25oC ta 20 25oC tb 15 10 200 300 400 500 600 700 800 900 1000 VCE = 390V 1750 125oC IEC = 40A 1500 125oC IEC = 20A 1250 1000 25oC IEC = 40A 750 500 25oC IEC = 20A 250 0 200 400 600 800 1000 dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs) dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs) FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT ZθJC , NORMALIZED THERMAL RESPONSE 2000 FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT 100 0.50 0.20 t1 0.10 10-1 PD t2 0.05 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.02 0.01 SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 23. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGT5A40N60A4D 90% 10% VGE EON2 EOFF L = 200µH VCE RG = 2.2Ω 90% + - ICE VDD = 390V 10% td(OFF)I tfI trI td(ON)I FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT 2-7 FIGURE 25. SWITCHING TEST WAVEFORMS HGT5A40N60A4D Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. 2-8 fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 25. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). ECCOSORBD is a Trademark of Emerson and Cumming, Inc. HGT5A40N60A4D Stretch-247 3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE A E INCHES TERM. 4 SYMBOL Q ØR D L1 b1 b2 c 3 3 2 1 J1 e MILLIMETERS MIN MAX NOTES 0.180 0.190 4.58 4.82 - b 0.046 0.051 1.17 1.29 2, 3 b1 0.060 0.070 1.53 1.77 1, 2 b2 0.095 0.105 2.42 2.66 1, 2 c 0.020 0.026 0.51 0.66 1, 2, 3 D 0.800 0.820 20.32 20.82 - E 0.605 0.625 15.37 15.87 e1 b MAX A e L MIN 0.219 TYP 0.438 BSC 5.56 TYP 11.12 BSC 4 4 J1 0.090 0.105 2.29 2.66 1 L 0.620 0.640 15.75 16.25 - BACK VIEW L1 0.145 0.155 3.69 3.93 1 Q 0.210 0.220 5.34 5.58 - ØR 0.195 0.205 4.96 5.20 - 2 e1 5 NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder plating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 8-99. 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