INTERSIL HGT5A40N60A4D

HGT5A40N60A4D
Data Sheet
February 2000
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT5A40N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFET
and a bipolar transistor. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49347. The diode
used in anti-parallel is the development type 49374.
File Number
4783.1
Features
• 100kHz Operation at 390V, 40A
• 200kHz Operation at 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at TJ = 125o
• Low Conduction Loss
Packaging
JEDEC STYLE STRETCH TO-247
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
E
C
G
Formerly Developmental Type TA49349.
Ordering Information
PART NUMBER
PACKAGE
HGT5A40N60A4D
TO-247-ST
COLLECTOR
(FLANGE)
BRAND
40N60A4D
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
2-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
HGT5A40N60A4D
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
HGT5A40N60A4D
UNITS
600
V
75
A
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
63
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
300
A
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC
200A at 600V
625
W
5
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
BVCES
ICES
VCE(SAT)
VGE(TH)
TEST CONDITIONS
IC = 250µA, VGE = 0V
VCE = BVCES
IC = 40A,
VGE = 15V
TJ = 25oC
TJ = 125oC
TJ = 25oC
TJ = 125oC
IC = 250µA, VCE = VGE
MIN
TYP
MAX
UNITS
600
-
-
V
-
-
250
µA
-
-
3.0
mA
-
1.7
2.7
V
-
1.5
2.0
V
4.5
5.6
7
V
-
-
±250
nA
200
-
-
A
IGES
VGE = ±20V
Switching SOA
SSOA
TJ = 150oC, RG = 2.2Ω, VGE = 15V
L = 100µH, VCE = 600V
Gate to Emitter Plateau Voltage
VGEP
IC = 40A, VCE = 0.5 BVCES
-
8.5
-
V
IC = 40A,
VCE = 0.5 BVCES
VGE = 15V
-
350
405
nC
VGE = 20V
-
450
520
nC
-
25
-
ns
-
18
-
ns
-
145
-
ns
-
35
-
ns
-
400
-
µJ
Gate to Emitter Leakage Current
On-State Gate Charge
Qg(ON)
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
IGBT and Diode at TJ = 25oC
ICE = 40A
VCE = 0.65 BVCES
VGE =15V
RG= 2.2Ω
L = 200µH
Test Circuit (Figure 24)
Turn-On Energy (Note 2)
EON1
Turn-On Energy (Note 2)
EON2
-
850
-
µJ
Turn-Off Energy (Note 3)
EOFF
-
370
-
µJ
2-2
HGT5A40N60A4D
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
TEST CONDITIONS
IGBT and Diode at TJ = 125oC
ICE = 40A
VCE = 0.65 BVCES
VGE = 15V
RG= 2.2Ω
L = 200µH
Test Circuit (Figure 24)
MIN
TYP
MAX
UNITS
-
27
-
ns
-
20
-
ns
-
185
225
ns
-
55
95
ns
-
400
-
µJ
Turn-On Energy (Note 2)
EON1
Turn-On Energy (Note 2)
EON2
-
1220
1400
µJ
Turn-Off Energy (Note 3)
EOFF
-
700
800
µJ
Diode Forward Voltage
VEC
IEC = 40A
-
2.25
2.7
V
IEC = 40A, dIEC/dt = 200A/µs
-
48
55
ns
IEC = 1A, dIEC/dt = 200A/µs
-
38
45
ns
IGBT
-
-
0.2
oC/W
Diode
-
-
1
oC/W
Diode Reverse Recovery Time
trr
Thermal Resistance Junction To Case
RθJC
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Unless Otherwise Specified
ICE , DC COLLECTOR CURRENT (A)
80
VGE = 15V
70
PACKAGE LIMITED
60
50
40
30
20
10
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
2-3
150
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
225
TJ = 150oC, RG = 2.2Ω, VGE = 15V, L = 100µH
200
175
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
HGT5A40N60A4D
fMAX, OPERATING FREQUENCY (kHz)
300
TC
VGE
75oC 15V
200
100
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.2oC/W, SEE NOTES
RG = 2.2Ω, L = 200µH, VCE = 390V
10
3
10
40
70
(Continued)
12
1200
VCE = 390V, RG = 2.2Ω, TJ = 125oC
1000
10
ISC
8
800
6
600
tSC
400
4
2
10
11
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
50
TJ = 125oC
30
TJ = 25oC
TJ = 150oC
10
0
0
0.4
0.2
0.6
0.8
1.0
1.2
1.6
1.4
1.8
2.0
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
20
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
70
60
50
40
TJ = 125oC
30
TJ = 150oC
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5500
1800
RG = 2.2Ω, L = 200µH, VCE = 390V
EOFF, TURN-OFF ENERGY LOSS (µJ)
EON2 , TURN-ON ENERGY LOSS (µJ)
TJ = 25oC
20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
4500
TJ = 125oC, VGE = 12V, VGE = 15V
4000
3500
3000
2500
2000
1500
1000
500
0
0
200
16
15
14
80
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
5000
13
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
80
40
12
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
70
ISC, PEAK SHORT CIRCUIT CURRENT (A)
Unless Otherwise Specified
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
Typical Performance Curves
TJ = 25oC, VGE = 12V, VGE = 15V
1400
20
30
40
50
60
70
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
2-4
80
TJ = 125oC, VGE = 12V OR 15V
1200
1000
800
600
400
TJ = 25oC, VGE = 12V OR 15V
200
0
10
RG = 2.2Ω, L = 200µH, VCE = 390V
1600
0
10
20
30
40
50
60
70
80
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGT5A40N60A4D
Typical Performance Curves
Unless Otherwise Specified
(Continued)
120
RG = 2.2Ω, L = 200µH, VCE = 390V
40
RG = 2.2Ω, L = 200µH, VCE = 390V
TJ = 25oC, TJ = 125oC, VGE = 15V
38
100
trI , RISE TIME (ns)
td(ON)I, TURN-ON DELAY TIME (ns)
42
36
34
32
30
28
26
80
60
40
20
24
22
TJ = 125oC, TJ = 25oC, VGE = 12V
TJ = 25oC, TJ = 125oC, VGE = 15V
0
10
20
30
40
50
60
70
0
80
TJ = 25oC, TJ = 125oC, VGE = 15V
0
ICE , COLLECTOR TO EMITTER CURRENT (A)
50
60
70
80
RG = 2.2Ω, L = 200µH, VCE = 390V
VGE = 12V, VGE = 15V, TJ = 125oC
160
150
55
50
45
40
VGE = 12V OR 15V, TJ = 25oC
140
TJ = 125oC, VGE = 12V OR 15V
60
TJ = 25oC, VGE = 12V OR 15V
35
30
0
10
20
30
40
50
60
70
80
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
16
VGE, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
300
250
200
TJ = -55oC
150
TJ = 125oC
TJ = 25oC
100
50
6
7
8
9
10
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
2-5
10
20
30
40
50
60
70
80
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
400
350
0
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
65
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
70
RG = 2.2Ω, L = 200µH, VCE = 390V
170
0
30
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
180
130
20
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
190
10
11
IG(REF) = 1mA, RL = 7.5Ω, TC = 25oC
14
12
VCE = 600V
VCE = 400V
10
8
VCE = 200V
6
4
2
0
0
50
100
150
200
250
300
350
QG , GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
400
HGT5A40N60A4D
Unless Otherwise Specified
6
TJ = 125oC, L = 200µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 +EOFF
5
ICE = 80A
4
3
2
ICE = 40A
1
0
ICE = 20A
50
25
75
100
125
150
(Continued)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
Typical Performance Curves
100
TJ = 125oC, L = 200µH
VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
10
ICE = 80A
ICE = 40A
1
ICE = 20A
0.1
1
10
TC , CASE TEMPERATURE (oC)
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
14
FREQUENCY = 1MHz
C, CAPACITANCE (nF)
12
10
8
CIES
6
4
COES
2
CRES
0
10
20
30
40
50
60
70
80
90
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
0
2.4
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs, TJ = 25oC
2.3
2.2
ICE = 80A
2.1
ICE = 40A
2.0
ICE = 20A
1.9
8
9
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
120
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
trr, RECOVERY TIMES (ns)
IEC , FORWARD CURRENT (A)
12
13
14
40
TJ = 125oC
30
25
20
TJ = 25oC
100
80
70
125oC tb
125oC ta
60
25oC trr
50
40
30
25oC ta
5
10
25oC tb
0
0
0.5
1.0
1.5
2.0
VEC , FORWARD VOLTAGE (V)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
2-6
16
125oC trr
90
20
10
0
15
dIEC/dt = 200A/µs
110
15
11
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
50
35
10
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
45
500
100
RG, GATE RESISTANCE (Ω)
2.5
0
5
10
15
20
25
30
35
40
IEC , FORWARD CURRENT (A)
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
HGT5A40N60A4D
Typical Performance Curves
Unless Otherwise Specified
(Continued)
IEC = 40A, VCE = 390V
65
trr, RECOVERY TIMES (ns)
Qrr, REVERSE RECOVERY CHARGE (nc)
70
125oC ta
60
55
50
45
125oC
40
tb
35
30
25
25oC ta
20
25oC tb
15
10
200
300
400
500
600
700
800
900
1000
VCE = 390V
1750
125oC IEC = 40A
1500
125oC IEC = 20A
1250
1000
25oC IEC = 40A
750
500
25oC IEC = 20A
250
0
200
400
600
800
1000
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
ZθJC , NORMALIZED THERMAL RESPONSE
2000
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
100
0.50
0.20
t1
0.10
10-1
PD
t2
0.05
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.02
0.01
SINGLE PULSE
10-2 -5
10
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 23. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGT5A40N60A4D
90%
10%
VGE
EON2
EOFF
L = 200µH
VCE
RG = 2.2Ω
90%
+
-
ICE
VDD = 390V
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
2-7
FIGURE 25. SWITCHING TEST WAVEFORMS
HGT5A40N60A4D
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
2-8
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 25.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD . A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 25. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
HGT5A40N60A4D
Stretch-247
3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
A
E
INCHES
TERM. 4
SYMBOL
Q
ØR
D
L1
b1
b2
c
3
3
2
1
J1
e
MILLIMETERS
MIN
MAX
NOTES
0.180
0.190
4.58
4.82
-
b
0.046
0.051
1.17
1.29
2, 3
b1
0.060
0.070
1.53
1.77
1, 2
b2
0.095
0.105
2.42
2.66
1, 2
c
0.020
0.026
0.51
0.66
1, 2, 3
D
0.800
0.820
20.32
20.82
-
E
0.605
0.625
15.37
15.87
e1
b
MAX
A
e
L
MIN
0.219 TYP
0.438 BSC
5.56 TYP
11.12 BSC
4
4
J1
0.090
0.105
2.29
2.66
1
L
0.620
0.640
15.75
16.25
-
BACK VIEW
L1
0.145
0.155
3.69
3.93
1
Q
0.210
0.220
5.34
5.58
-
ØR
0.195
0.205
4.96
5.20
-
2
e1
5
NOTES:
1. Lead dimension and finish uncontrolled in L1.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder plating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bottom
of dimension D.
6. Controlling dimension: Inch.
7. Revision 1 dated 8-99.
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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