SiA430DJ Datasheet

SiA430DJ
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)b, c
0.0135 at VGS = 10 V
12a
0.0185 at VGS = 4.5 V
10.8
VDS (V)
20
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK®
SC-70 Package
RoHS
COMPLIANT
- Small Footprint Area
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Qg (Typ.)
5.3 nC
APPLICATIONS
• Load Switch
PowerPAK SC-70-6L-Single
D
Marking Code
1
D
AKX
2
Part # code
D
XXX
3
6
G
D
5
G
S
D
2.05 mm
Lot Traceability
and Date code
S
2.05 mm
4
Ordering Information:
SiA430DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
SiA430DJ-T4-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Continuous Source-Drain Diode Current
Soldering Recommendations (Peak Temperature)d, e
IS
PD
TJ, Tstg
Limit
20
± 20
12a
12a
12a, b, c
10.1b, c
40
12a
2.9b, c
19.2
12.3
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t5s
28
36
Maximum Junction-to-Ambientb, f
°C/W
RthJC
5.3
6.5
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 68685
S13-0116-Rev. B, 21-Jan-13
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA430DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
V
24
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
3
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS 5 V, VGS = 10 V
- 5.6
1
20
µA
A
VGS 10 V, ID = 7 A
0.0108
0.0135
VGS 4.5 V, ID = 5 A
0.0146
0.0185
VDS = 10 V, ID = 7 A
16

S
b
Dynamic
Ciss
Input Capacitance
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
800
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 4.5 V, ID = 12 A
tr
td(off)
Turn-Off Delay Time
tf
Fall Time
f = 1 MHz
VDD = 10 V, RL = 1 
ID  10 A, VGEN = 4.5 V, Rg = 1 
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
12
18
5.3
9
2
nC
1.4
td(on)
Rise Time
pF
90
VDS = 10 V, VGS = 10 V, ID = 12 A
Turn-On Delay Time
200
VDD = 10 V, RL = 1 
ID  10 A, VGEN = 10 V, Rg = 1 

2.5
16
25
10
15
15
25
10
15
10
15
8
15
17
30
8
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
12
40
IS = 5 A, VGS 0 V
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
18
30
ns
7
15
nC
8
10
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
For technical questions, contact: [email protected]
Document Number: 68685
S13-0116-Rev. B, 21-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA430DJ
Vishay Siliconix
TYPICAL CHARACTERISTIC (25 °C, unless otherwise noted)
40
5
VGS = 10 V thru 5 V
VGS = 4 V
TC = - 55 °C
4
I D - Drain Current (A)
I D - Drain Current (A)
32
24
16
VGS = 3 V
8
3
TC = 125 °C
2
1
TC = 25 °C
0
0.0
0.5
1.0
1.5
0
0.0
2.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.0
1000
0.025
0.020
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
800
VGS = 4.5 V
0.015
VGS = 10 V
600
400
Coss
0.010
200
Crss
0
0.005
0
8
16
24
32
0
40
10
15
I D - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
20
1.6
10
RDS(on) - On-Resistance (Normalized)
ID = 12 A
VGS - Gate-to-Source Voltage (V)
5
VDS = 10 V
8
VDS = 5 V
6
VDS = 15 V
4
2
0
0
3
6
9
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68685
S13-0116-Rev. B, 21-Jan-13
12
ID = 7 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For technical questions, contact: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA430DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.055
100
ID = 5 A
TJ = 25 °C
TJ = 150 °C
1
0.1
0.01
0.045
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
0.035
0.025
TJ = 125 °C
0.015
TJ = - 50 °C
TJ = 25 °C
0.005
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
4
5
6
7
8
9
10
On-Resistance vs. Gate-to-Source Voltage
0.3
30
25
0.1
20
Power (W)
VGS(th) Variance (V)
3
VGS - Gate-to-Source Voltage (V)
- 0.1
ID = 1 mA
- 0.3
15
10
ID = 250 µA
- 0.5
- 0.7
- 50
5
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
Threshold Voltage
0.1
1
Time (s)
10
100
1000
Single Pulse Power (Junction-to-Ambient)
100
10 µs
Limited by RDS(on)*
100 µs
I D - Drain Current (A)
10
1 ms
1
10 ms
100 ms
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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For technical questions, contact: [email protected]
Document Number: 68685
S13-0116-Rev. B, 21-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA430DJ
Vishay Siliconix
35
25
28
20
Power (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
21
Package Limited
14
15
10
5
7
0
0
0
25
50
75
100
125
150
0
25
50
TC - Case Temperature (°C)
Current Derating*
75
100
125
150
TJ - Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68685
S13-0116-Rev. B, 21-Jan-13
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA430DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.0001
Single Pulse
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68685.
www.vishay.com
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For technical questions, contact: [email protected]
Document Number: 68685
S13-0116-Rev. B, 21-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000