DATASHEET

Radiation Hardened High Speed, Quad SPST, CMOS
Analog Switch
HS-201HSRH, HS-201HSEH
Features
The HS-201HSRH, HS-201HSEH are monolithic CMOS analog
switch featuring power-off high input impedance, very fast
switching speeds and low ON-resistance. Fabrication on our
DI RSG process assures SEL immunity and only very slight
sensitivity to low dose rate (ELDRS). These Class V/Q devices
are tested and guaranteed for 300krad (Si) total dose
performance.
• Electrically screened to DLA SMD# 5962-99618
Power-off high input impedance enables the use of this device
in redundant circuits without causing data bus signal
degradation. ESD protection, overvoltage protection, fast
switching times, low ON-resistance, and guaranteed radiation
hardness, make the HS-201HSRH ideal for any space
application where improved switching performance is
required.
• Overvoltage protection (power on, switch off) . . . . . . . . . . . ±30V
• QML qualified per MIL-PRF-38535
• Radiation performance
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)
- Low dose rate (0.01rad(SI)/s) . . . . . . . . . . . . . . 50krad(Si)
- SEL immune . . . . . . . . . . . . . . . . . . . . . . . . . DI RSG process
• Power off high impedance . . . . . . . . . . . . . . . . . . . . . . . . ±17V
• Fast switching times
- tON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110ns (max)
- tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80ns (max)
• Low “ON” resistance . . . . . . . . . . . . . . . . . . . . . . . . 50Ω (max)
• Pin compatible with industry standard 201 types
• Operating supply range . . . . . . . . . . . . . . . . . . . . . . .±10V to ±15V
• Wide analog voltage range (±15V supplies) . . . . . . . . . . . . ±15V
• TTL compatible
Applications
• High speed multiplexing
• Sample and hold circuits
• Digital filters
• Operational amplifier gain switching networks
• Integrator reset circuits
Pin Configuration
HS1-201HSRH, HS1-201HSEH SBDIP (CDIP2-T16)
HS9-201HSRH, HS9-201HSEH FLATPACK (CDFP4-F16)
TOP VIEW
A1 1
OUT1 2
IN1 3
14 IN2
13 V+
GND 5
12 NC
IN4 6
11 IN3
A4 8
1
15 OUT2
V- 4
OUT4 7
February 11, 2014
FN4874.3
16 A2
10 OUT3
9 A3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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HS-201HSRH, HS-201HSEH
Ordering Information
INTERNAL
MKT. NUMBER
(Note 1)
ORDERING
SMD NUMBER
(Note 2)
PART
MARKING
TEMP. RANGE
(°C)
PACKAGE
(RoHS Compliant)
PKG.
DWG. #
5962F9961801VEC
HS1-201HSRH-Q
Q 5962F99 61801VEC
-55 to +125
16 Ld SBDIP
D16.3
5962F9961802VEC
HS1-201HSEH-Q
Q 5962F99 61802VEC
-55 to +125
16 Ld SBDIP
D16.3
5962F9961801QEC
HS1-201HSRH-8
Q 5962F99 61801QEC
-55 to +125
16 Ld SBDIP
D16.3
5962F9961801VXC
HS9-201HSRH-Q
Q 5962F99 61801VXC
-55 to +125
16 Ld Flatpack
K16.A
5962F9961802VXC
HS9-201HSEH-Q
Q 5962F99 61802VXC
-55 to +125
16 Ld Flatpack
K16.A
5962F9961801QXC
HS9-201HSRH-8
Q 5962F99 61801QXC
-55 to +125
16 Ld Flatpack
K16.A
5962F9961801V9A
HS0-201HSRH-Q
-55 to +125
Die
5962F9961802V9A
HS0-201HSEH-Q
-55 to +125
Die
HS1-201HSRH/PROTO
HS1-201HSRH/PROTO
HS1-201HSRH/PROTO
-55 to +125
16 Ld SBDIP
D16.3
HS9-201HSRH/PROTO
HS9-201HSRH/PROTO
HS9-201HSRH/PROTO
-55 to +125
16 Ld Flatpack
K16.A
HS0-201HSRH/SAMPLE
HS0-201HSRH/SAMPLE
-55 to +125
Die
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the
“Ordering Information” table must be used when ordering
2
FN4874.3
February 11, 2014
HS-201HSRH, HS-201HSEH
Die Characteristics
DIE DIMENSIONS
ASSEMBLY RELATED INFORMATION
2790µm x 4950µm (110 mils x 195 mils)
Thickness: 483µm ±25.4µm (19 mils ±1 mil)
Substrate Potential
Unbiased (DI)
INTERFACE MATERIALS
ADDITIONAL INFORMATION
Glassivation
Worst Case Current Density
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8.0kÅ ±1.0kÅ
<2.0 x 105 A/cm2
Transistor Count
Metallization
328
Type: Al Si Cu
Thickness: 16.0kÅ ± 2kÅ
Substrate
Rad Hard Silicon Gate, Dielectric Isolation
Backside Finish
Silicon
Metallization Mask Layout
OUT4
IN4
GND
V-
IN1
OUT1
A4
A1
A3
A2
OUT3
IN3
3
V+
IN2
OUT2
FN4874.3
February 11, 2014
HS-201HSRH, HS-201HSEH
Package Outline Drawing
K16.A
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
Rev 2, 1/10
0.015 (0.38)
0.008 (0.20)
PIN NO. 1
ID OPTIONAL
1
2
0.050 (1.27 BSC)
PIN NO. 1
ID AREA
TOP VIEW
0.022 (0.56)
0.015 (0.38)
0.115 (2.92)
0.045 (1.14)
0.440 (11.18)
MAX
0.005 (0.13)
MIN
4
0.045 (1.14)
0.026 (0.66)
6
0.285 (7.24)
0.245 (6.22)
0.009 (0.23)
0.004 (0.10)
-D-H-
-C-
0.13 (3.30)
MIN
SEATING AND
BASE PLANE
0.370 (9.40)
0.250 (6.35)
0.03 (0.76) MIN
LEAD FINISH
SIDE VIEW
NOTES:
0.006 (0.15)
0.004 (0.10)
1. Index area: A notch or a pin one identification mark shall be located
adjacent to pin one and shall be located within the shaded area shown.
The manufacturer’s identification shall not be used as a pin one
identification mark. Alternately, a tab may be used to identify pin one.
LEAD FINISH
0.009 (0.23)
BASE
METAL
0.004 (0.10)
0.019 (0.48)
0.015 (0.38)
3. The maximum limits of lead dimensions (section A-A) shall be
measured at the centroid of the finished lead surfaces, when solder
dip or tin plate lead finish is applied.
4. Measure dimension at all four corners.
0.0015 (0.04)
MAX
5. For bottom-brazed lead packages, no organic or polymeric materials
shall be molded to the bottom of the package to cover the leads.
0.022 (0.56)
0.015 (0.38)
3
SECTION A-A
2. If a pin one identification mark is used in addition to a tab, the limits
of the tab dimension do not apply.
6. Dimension shall be measured at the point of exit (beyond the
meniscus) of the lead from the body. Dimension minimum shall
be reduced by 0.0015 inch (0.038mm) maximum when solder dip
lead finish is applied.
7. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
8. Controlling dimension: INCH.
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FN4874.3
February 11, 2014
HS-201HSRH, HS-201HSEH
Ceramic Dual-In-Line Metal Seal Packages (SBDIP)
D16.3 MIL-STD-1835 CDIP2-T16 (D-2, CONFIGURATION C)
LEAD FINISH
c1
-A-
16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE
-DBASE
METAL
E
b1
M
(b)
M
-Bbbb S C A - B S
SECTION A-A
D S
D
BASE
PLANE
Q
S2
-C-
SEATING
PLANE
A
L
S1
eA
A A
b2
b
e
eA/2
c
aaa M C A - B S D S
ccc M C A - B S D S
INCHES
(c)
NOTES:
1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b2.
5. Dimension Q shall be measured from the seating plane to the
base plane.
SYMBOL
MIN
MILLIMETERS
MAX
MIN
MAX
NOTES
A
-
0.200
-
5.08
-
b
0.014
0.026
0.36
0.66
2
b1
0.014
0.023
0.36
0.58
3
b2
0.045
0.065
1.14
1.65
-
b3
0.023
0.045
0.58
1.14
4
c
0.008
0.018
0.20
0.46
2
c1
0.008
0.015
0.20
0.38
3
D
-
0.840
-
21.34
-
E
0.220
0.310
5.59
7.87
-
e
0.100 BSC
2.54 BSC
-
eA
0.300 BSC
7.62 BSC
-
eA/2
0.150 BSC
3.81 BSC
-
L
0.125
0.200
3.18
5.08
-
Q
0.015
0.060
0.38
1.52
5
S1
0.005
-
0.13
-
6
S2
0.005
-
0.13
-
7
α
90o
105o
90o
105o
-
aaa
-
0.015
-
0.38
-
bbb
-
0.030
-
0.76
-
ccc
-
0.010
-
0.25
-
M
-
0.0015
-
0.038
2
N
16
16
8
Rev. 0 4/94
6. Measure dimension S1 at all four corners.
7. Measure dimension S2 from the top of the ceramic body to the
nearest metallization or lead.
8. N is the maximum number of terminal positions.
9. Braze fillets shall be concave.
10. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
11. Controlling dimension: INCH.
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in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
5
FN4874.3
February 11, 2014