95692

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Changes to 1.2.4, 1.3, and 1.4. Added functional test to table I. Update
boilerplate. -rrp
99-07-12
R. Monnin
B
Redraw. Update to current requirements. – drw
10-10-14
Charles F. Saffle
REV
SHEET
REV
B
B
SHEET
15
16
REV STATUS
REV
B
B
B
B
B
B
B
B
B
B
B
B
B
B
OF SHEETS
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PMIC N/A
PREPARED BY
Sandra Rooney
STANDARD
MICROCIRCUIT
DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
CHECKED BY
Sandra Rooney
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
Michael A. Frye
DRAWING APPROVAL DATE
96-03-19
REVISION LEVEL
B
MICROCIRCUIT, LINEAR, RADIATION
HARDENED, CMOS,
MULTIPLEXER/DEMULTIPLEXER, MONOLITHIC
SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-95692
1 OF 16
5962-E011-11
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part
or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
-
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
V
E
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
95692
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device types. The device types identify the circuit function as follows:
Device type
Generic number
01
HS508RH
02
HS509RH
Circuit function
Radiation hardened, D.I., single 8-channel
MUX/DEMUX
Radiation hardened, D.I., differential 4-channel
MUX/DEMUX
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
M
Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline. The case outline is as designated in MIL-STD-1835 as follows:
Outline letter
E
Descriptive designator
Terminals
Package style
GDIP1-T16 or CDIP2-T16
16
Dual-in-line
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95692
A
REVISION LEVEL
B
SHEET
2
1.3 Absolute maximum ratings. 1/
Supply voltage between +V and -V ................................................................
Supply voltage between +V and ground .........................................................
Supply voltage between -V and ground ..........................................................
+VEN, +VA ..................................................................................................
-VEN, -VA ...................................................................................................
Analog input overvoltage:
+VS ............................................................................................................
-VS .............................................................................................................
Peak current, S or D:
(pulsed at 1 ms, 10 percent duty cycle max) ...........................................
Storage temperature range ............................................................................
Maximum package power dissipation at TA = +125C (PD) ...........................
Thermal resistance, junction-to-case (JC) ....................................................
+44 V
+22 V
-22 V
+VSUPPLY + 4 V
-VSUPPLY – 4 V
+VSUPPLY + 2 V
-VSUPPLY – 2 V
40 mA
-65C to +150C
0.56 2/
28C/W
Thermal resistance, junction-to-ambient (JA) ............................................... 90C/W
Lead temperature (soldering, 10 seconds) ..................................................... +300C
Junction temperature (TJ) ............................................................................... +175C
1.4 Recommended operating conditions.
Operating supply voltage (VSUPPLY) ...............................................................
Analog input voltage (VS) ................................................................................
Logic low level (VAL) .......................................................................................
Logic high level (VAH) ......................................................................................
Max RMS current, S or D ...............................................................................
Ambient operating temperature range (TA) .....................................................
15 V
VSUPPLY
0 V to 0.8 V
+2.4 V to +VSUPPLY
8 mA
-55C to +125C
1.5 Radiation features.
Dose rate upset (20 ns pulse) ......................................................................... 3/
Maximum total dose available (dose rate = 50 –300 rads (Si)/s) .................... 10 Krads (Si)
Latch-up ......................................................................................................... None 4/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
________
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA)
at 11.1 mW/C for case outline E.
3/ Value to be specified when testing is complete.
4/ Guaranteed by process or design, not tested.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95692
A
REVISION LEVEL
B
SHEET
3
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Truth tables. The truth tables shall be as specified on figure 2.
3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as specified in table III.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of
supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MILPRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of
product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime’s agent,
and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore
documentation shall be made available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 82 (see MIL-PRF-38535, appendix A).
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
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DSCC FORM 2234
APR 97
SIZE
5962-95692
A
REVISION LEVEL
B
SHEET
4
TABLE I. Electrical performance characteristics.
Test
Input leakage current 1/
Symbol
IIH
IIL
Conditions
-55C  TA +125C
-V = -15 V, +V = +15 V
VEN = 2.4 V
unless otherwise specified
Measure inputs sequentially,
connect all unused inputs to
GND
IIH, IIL
Leakage current into the source
terminal of an “OFF” switch
1.0
-1.0
1.0
-1.0
1.0
-10
+10
2, 3
-50
+50
1
-50
+50
1
-10
+10
2, 3
-50
+50
1
-50
+50
1
VEN = 0.5 V,
M, D 2/
+ID(OFF)
VD = +10 V, VEN = 0.8 V,
All unused inputs = -10 V
VEN = 0.5 V,
M, D 2/
-ID(OFF)
VD = -10 V, VEN = 0.8 V,
All unused inputs = +10 V
VEN = 0.5 V,
M, D 2/
Unit
-1.0
1, 2, 3
+IS(OFF) VS = +10 V, VEN = 0.8 V,
All unused inputs = -10 V,
VD = -10 V
VS = -10 V, VEN = 0.8 V,
All unused inputs = +10 V,
VD = +10 V
Limits
Max
1
-IS(OFF)
Device
type
Min
M, D 2/
VEN = 0.5 V,
M, D 2/
Leakage current into the drain
terminal of an “OFF” switch
Group A
subgroups
01, 02
01, 02
1
01, 02
-10
+10
2, 3
01
-200
+200
02
-100
+100
01
-200
+200
02
-100
+100
1
01, 02
-10
+10
2, 3
01
-200
+200
02
-100
+100
01
-200
+200
02
-100
+100
1
1
A
nA
nA
nA
nA
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95692
A
REVISION LEVEL
B
SHEET
5
TABLE I. Electrical performance characteristics - continued.
Test
Leakage current from an “ON”
driver into the switch (drain)
Symbol
+ID(ON)
Conditions
-55C  TA +125C
-V = -15 V, +V = +15 V
VEN = 2.4 V
unless otherwise specified
VD = +10 V, VS = +10 V,
All unused inputs = -10 V
M, D 2/
-ID(ON)
VD = -10 V, VS = -10 V,
All unused inputs = +10 V
+I
Negative supply current
-I
Standby positive supply current
+ISBY
-ISBY
-200
+200
02
-100
+100
01
-200
+200
02
-100
+100
1
01, 02
-10
+10
2, 3
01
-200
+200
02
-100
+100
01
-200
+200
02
-100
+100
1, 2, 3
M, D 2/
Standby negative supply current
01
01, 02
01, 02
1, 2, 3
M, D 2/
nA
2.4
mA
-1.0
mA
-1.0
01, 02
1
VA = 0 V, VEN = 0 V
nA
2.4
1
VA = 0 V, VEN = 0 V
Max
2, 3
1, 2, 3
M, D 2/
Min
+10
1
VA = 0 V, VEN = 2.4 V
Unit
-10
1, 2, 3
M, D 2/
Limits
01, 02
1
VA = 0 V, VEN = 2.4 V
Device
type
1
1
M, D 2/
Positive supply current
Group A
subgroups
2.4
mA
2.4
01, 02
1
-1.0
mA
-1.0
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95692
A
REVISION LEVEL
B
SHEET
6
TABLE I. Electrical performance characteristics - continued.
Test
Switch “ON” resistance
Symbol
+RDS1
Conditions
-55C  TA +125C
-V = -15 V, +V = +15 V
VEN = 2.4 V
unless otherwise specified
VS = 10 V, ID = -100 A
VS = -10 V, ID = +100 A
M, D 2/
Logic level voltage
VAL
3/, 4/
VAH
Limits
01, 02
M, D 2/
Max

300
400
1
400
1
300
2, 3
400
1
400
01, 02

0.8
1
3/, 4/
Unit
2, 3
1, 2, 3
M, D 2/
Device
type
Min
1
M, D 2/
-RDS1
Group A
subgroups
V
0.5
1, 2, 3
2.4
1
2.4
V
Capacitance:
Address
CA
V+ = V- = 0 V, f = 1 MHz,
TA = +25C, See 4.4.1d 5/
4
01, 02
10
pF
Capacitance:
Output switch
COS
V+ = V- = 0 V, f = 1 MHz,
TA = +25C, See 4.4.1d 5/
4
01
45
pF
02
25
Capacitance:
Input switch
CIS
V+ = V- = 0 V, f = 1 MHz,
TA = +25C, See 4.4.1d 5/
4
01, 02
12
pF
10
mV
Charge transfer error
VCTE
VS = GND, VGEN = 0 V to 5 V,
f = 200 kHz, TA = +25C 5/
7
01, 02
Off isolation
VISO
VEN = 0.8 V, RL = 1 k,
CL = 15 pF, VS = 7 Vrms,
f = 100 kHz, TA = +25C 5/
7
01, 02
Functional test
FT
See 4.4.1b
7, 8
01, 02
-50
dB
See footnotes at end of table.
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DSCC FORM 2234
APR 97
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REVISION LEVEL
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SHEET
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TABLE I. Electrical performance characteristics - continued.
Test
Symbol
Break-before-make time delay
tD
Conditions
-55C  TA +125C
-V = -15 V, +V = +15 V
VEN = 2.4 V
unless otherwise specified
VEN = 4.0 V, See figure 3
Group A
subgroups
Device
type
Min
9
01, 02
10, 11
M, D 2/
Propagation delay times:
Address inputs to I/O channels
times:
tA
VEN = 4.0 V, See figure 3
M, D 2/
Enable to I/O
tON(EN)
VEN = 4.0 V, See figure 3
tOFF(EN)
VEN = 4.0 V, See figure 3
M, D 2/
Unit
Max
25
ns
5
9
01
9
01. 02
5
500
10, 11
1000
9
1000
9
M, D 2/
Limits
01, 02
ns
500
10, 11
1000
9
1000
9
500
10, 11
1000
9
1000
ns
ns
1/
Input current of one input mode.
2/
Devices supplied to this drawing will meet all levels M and D of irradiation. However, these devices are only tested at the D
level. Pre and post irradiation values are identical unless otherwise specified in table I.
3/
Used for forcing conditions for all DC tests, unless otherwise specified.
4/
To drive from DTL/TTL circuits, 1 kpull-up resistors to +5.0 V supply are recommended.
5/
Guaranteed, if not tested, to the limits as specified.
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Device
types
01
Case outline
Terminal
number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
02
E
Terminal symbol
AO
ENABLE
-VSUPPLY
IN 1
IN 2
IN 3
IN 4
OUT
IN 8
IN 7
IN 6
IN 5
+VSUPPLY
GND
A2
A1
AO
ENABLE
-VSUPPLY
IN 1A
IN 2A
IN 3A
IN 4A
OUTA
OUTB
IN 4B
IN 3B
IN 2B
IN 1B
+VSUPPLY
GND
A1
FIGURE 1. Terminal connections.
Device type 01
Device type 02
A2
A1
AO
EN
X
X
X
L
“ON”
CHANNEL
NONE
L
L
L
H
1
L
L
H
H
2
A1
A0
EN
X
X
L
“ON” CHANNEL
PAIR
NONE
L
L
H
1
L
H
H
2
L
H
L
H
3
H
L
H
3
L
H
H
H
4
H
H
H
4
H
L
L
H
5
H
L
H
H
6
H
H
L
H
7
H
H
H
H
8
FIGURE 2. Truth tables.
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FIGURE 3. Timing diagrams.
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FIGURE 3. Timing diagrams - continued.
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FIGURE 3. Timing diagrams - continued.
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
(2) TA = +125C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes Q and V,
subgroups 7 and 8 shall include verifying the functionality of the device.
c.
Subgroups 5 and 6 in table I, method 5005 of MIL-STD-883 shall be omitted.
d.
Subgroup 4 (CA, CIS, and COS measurements) should be measured only for initial qualification and after any process or
design changes which may affect input or output capacitance.
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REVISION LEVEL
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TABLE IIA. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class Q
Device
class V
1, 9
1, 9
1, 9
1, 2, 3, 9, 10, 11 1/
1, 2, 3, 9, 10,
11 1/
1, 2, 3, 9, 10,
11 1/, 2/
1, 2, 3, 4,7, 8, 9, 10,
11 3/
1, 2, 3, 4,7, 8,
9, 10, 11 3/
1, 2, 3, 4,7, 8,
9, 10, 11 3/
1, 2, 3
1, 2, 3
1, 2, 3 2/
1, 9
1, 9
1, 9
1, 9
1, 9
1, 9
1/ PDA applies to subgroup 1. For class V to subgroups 1 and .
2/ Delta limits (see table IIB) shall be required and the delta values shall be computed
with reference to the zero hour electrical parameters (see Table I).
3/ Subgroups 4 and 7, if not tested, shall be guaranteed to the limits specified in table I.
Table IIB. Postburn-in and group C delta parameters (TA = +25C).
Parameters
Symbol
Delta limits
IS(OFF)
10 nA
ID(OFF)
10 nA
ID(ON)
10 nA
RDS
30 
Positive supply current
I+
240 A
Negative supply current
I-
100 A
Positive standby supply current
+ISBY
240 A
Negative standby supply current
-ISBY
100 A
Input leakage current
IIL, IIH
100 nA
Leakage current into the source terminal
of an “OFF” switch
Leakage current into the drain terminal
of an “OFF” switch
Leakage current from an “ON” driver
into the switch (Drain and Source)
Switch on resistance
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95692
A
REVISION LEVEL
B
SHEET
14
TABLE III. Irradiation test connections. (TA = +25C  5C, +VSUPPLY = +15 V, -VSUPPLY = -15 V)
Device type 01
Test
Ground
-V
+V
+1 V  5%
+5 V  5%
Radiation exposure
2, 8, 14, 2/
3
13
4, 5, 6, 7, 9,10,
11, 12
1, 15, 16
Device type 02
Test
Ground
-V
+V
+1 V  5%
+5 V  5%
Radiation exposure
2, 8, 9, 15, 1/
3
14
4, 5, 6, 7,10, 11,
12, 13
1, 16
1/ Pins 8 and 9 each have a series resistor (RS) = 10 k  5%.
2/ Pin 8 has a series resistor (RS) = 10 k
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b.
TA = +125C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MILSTD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25C 5C,
after exposure, to the subgroups specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019 condition A and as specified herein.
4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater
than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the preirradiation end-point electrical parameter limit at 25C ±5C. Testing shall be performed at initial qualification and after any
design or process changes which may affect the RHA response of the device.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95692
A
REVISION LEVEL
B
SHEET
15
4.4.4.2 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test
method 1020 of MIL-STD-883 and as specified herein (see 1.5). Tests shall be performed on devices, SEC, or approved test
structures at technology qualification and after any design or process changes which may effect the RHA capability of the
process.
4.4.4.3 Dose rate upset testing. Dose rate upset testing shall be performed on a technology process, in accordance with test
method 1023 of MIL-STD-883 and herein.
a.
Transient dose rate upset testing for class M devices shall be performed at initial qualification and after any design or
process changes which may effect the RHA performance of the devices. Test 10 devices with 0 defects unless
otherwise specified.
b.
Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved
radiation hardness assurance plan and MIL-PRF-38535.
4.4.4.4 Dose rate burnout. When required by the customer, test shall be performed on devices, SEC, or approved test
structures at technology qualifications and after any design or process changes which may effect the RHA capability of the
process. Dose rate burnout shall be performed in accordance with test method 1023 of MIL-STD-883 and as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime -VA, telephone (614) 692-0547.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime -VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime -VA and
have agreed to this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DLA Land and Maritime -VA.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95692
A
REVISION LEVEL
B
SHEET
16
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 10-10-14
Approved sources of supply for SMD 5962-95692 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.dscc.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962D9569201VEA
3/
HS1-0508RH-Q
5962D9569201VEC
3/
HS1B-0508RH-Q
5962D9569202VEA
3/
HS1-0509RH-Q
5962D9569202VEC
3/
HS1B-0509RH-Q
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from an approved source. The last known supplier is listed below.
Vendor CAGE
number
34371
Vendor name
and address
Intersil Corporation
1001 Murphy Ranch Road
Milpitas, CA 95035-6803
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.