CD4043BMS CD4044BMS CMOS Quad 3 State R/S Latches December 1992 Features Pinout • High Voltage Types (20V Rating) CD4043BMS TOP VIEW • Quad NOR R/S Latch- CD4043BMS • Quad NAND R/S Latch - CD4044BMS • 3 State Outputs with Common Output ENABLE • Separate SET and RESET Inputs for Each Latch • NOR and NAND Configuration Q4 1 16 VDD Q1 2 15 R4 R1 3 14 S4 S1 4 13 NC ENABLE 5 12 S3 • Standardized Symmetrical Output Characteristics S2 6 11 R3 • 100% Tested for Quiescent Current at 20V R2 7 10 Q3 VSS 8 9 Q2 • 5V, 10V and 15V Parametric Ratings • Maximum Input Current of 1µa at 18V Over Full Package-Temperature Range; - 100nA at 18V and 25oC NC = NO CONNECTION • Noise Margin (Over Full Package Temperature Range): - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” Q4 1 16 VDD NC 2 15 S4 Applications S1 3 14 R4 CD4044BMS TOP VIEW R1 4 13 Q1 ENABLE 5 12 R3 R2 6 11 S3 S2 7 10 Q3 VSS 8 9 Q2 • Holding Register in Multi-Register System • Four Bits of Independent Storage with Output ENABLE • Strobed Register • General Digital Logic • CD4043BMS for Positive Logic Systems NC = NO CONNECTION • CD4044BMS for Negative Logic Systems Description CD4043BMS types are quad cross-coupled 3-state CMOS NOR latches and the CD4044BMS types are quad cross-coupled 3state CMOS NAND latches. Each latch has a separate Q output and individual SET and RESET inputs. The Q outputs are controlled by a common ENABLE input. A logic “1” or high on the ENABLE input connects the latch states to the Q outputs. A logic “0” or low on the ENABLE input disconnects the latch states from the Q outputs, results in an open circuit feature allows common busing of the outputs. The CD4043BMS and CD4044BMS are supplied in these 16lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack *CD4043B Only *H4T †H4T *H1C †HIE *H3X †H6W †CD4044B Only CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 7-876 File Number 3311 Specifications CD4043BMS, CD4044BMS Absolute Maximum Ratings Reliability Information DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Thermal Resistance . . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W o Maximum Package Power Dissipation (PD) at +125 C For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current Input Leakage Current Input Leakage Current SYMBOL IDD IIL IIH CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND LIMITS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 2 µA 2 +125 C - 200 µA VDD = 18V, VIN = VDD or GND 3 -55oC - 2 µA VIN = VDD or GND 1 +25oC -100 - nA 2 +125oC -1000 - nA VDD = 18V 3 -55oC -100 - nA VDD = 20 1 +25oC - 100 nA 2 +125oC - 1000 nA 3 -55oC - 100 nA - 50 mV VIN = VDD or GND VDD = 20 VDD = 18V o Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA mA Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V VDD = 2.8V, VIN = VDD or GND 7 +25oC VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC Functional F VOH > VOL < VDD/2 VDD/2 V Input Voltage Low (Note 2) VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V Input Voltage High (Note 2) VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V Input Voltage Low (Note 2) VIL VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC - 4 V Input Voltage High (Note 2) VIH VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC 11 - V Tri-State Output Leakage IOZL VIN = VDD or GND VOUT = 0V 1 +25oC -0.4 - µA Tri-State Output Leakage IOZH VIN = VDD or GND VOUT = VDD VDD = 20V 2 +125oC -12 - µA VDD = 18V 3 -55oC -0.4 - µA VDD = 20V 1 +25oC - 0.4 µA 2 +125oC - 12 µA 3 -55oC - 0.4 µA VDD = 18V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 7-877 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. Specifications CD4043BMS, CD4044BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Propagation Delay Set or Reset to Q SYMBOL TPHL TPLH GROUP A SUBGROUPS TEMPERATURE CONDITIONS VDD = 5V, VIN = VDD or GND (Notes 1, 2) Propagation Delay 3 - State Enable to Q TPHZ TPZH VDD = 5V, VIN = VDD or GND (Notes 2, 3) Propagation Delay 3 - State Enable to Q TPLZ TPZL VDD = 5V, VIN = VDD or GND (Notes 2, 3) Transition Time TTHL TTLH VDD = 5V, VIN = VDD or GND (Notes 1, 2) 9 10, 11 9 10, 11 9 10, 11 9 10, 11 +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC LIMITS MIN MAX UNITS - 300 ns - 405 ns - 230 ns - 311 ns - 180 ns - 243 ns - 200 ns - 270 ns NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. 1. CL = 50pF, RL = 1K, Input TR, TF < 20ns. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS NOTES VDD = 5V, VIN = VDD or GND 1, 2 TEMPERATURE -55oC, +25oC +125oC VDD = 10V, VIN = VDD or GND 1, 2 o o -55 C, +25 C Output Voltage VOL VDD = 5V, No Load 1, 2 UNITS - 1 µA - 30 µA - 2 µA - 60 µA - 2 µA +125oC - 120 µA +25oC, +125oC, - 50 mV +125 1, 2 MAX -55oC, +25oC oC VDD = 15V, VIN = VDD or GND MIN -55oC Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -55oC 4.95 - V Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC 9.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA -55oC 0.64 - mA Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VDD = 10V, VOUT = 0.5V 1, 2 VDD = 15V, VOUT = 1.5V 1, 2 VDD = 5V, VOUT = 4.6V 1, 2 VDD = 5V, VOUT = 2.5V 1, 2 VDD = 10V, VOUT = 9.5V 1, 2 VDD =15V, VOUT = 13.5V 7-878 1, 2 +125oC 0.9 - mA -55oC 1.6 - mA +125oC 2.4 - mA -55oC 4.2 - mA +125oC - -0.36 mA -55oC - -0.64 mA +125oC - -1.15 mA -55oC - -2.0 mA +125oC - -0.9 mA -55oC - -1.6 mA +125oC - -2.4 mA -55oC - -4.2 mA Specifications CD4043BMS, CD4044BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Input Voltage Low SYMBOL VIL CONDITIONS VDD = 10V, VOH > 9V, VOL < 1V NOTES TEMPERATURE MIN MAX UNITS 1, 2 +25oC, +125oC, - 3 V -55oC Input Voltage High VIH Propagation Delay Set or Reset to Q TPLH TPHL Propagation Delay 3 State Enable to Q VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V +25oC, +125oC, -55oC 7 - V 1, 2, 3 +25oC - 140 ns 1, 2, 3 o +25 C - 100 ns VDD = 10V 1, 2, 4 +25 oC - 110 ns VDD = 15V 1, 2, 4 +25oC - 80 ns o - 100 ns o VDD = 15V TPHZ TPZH 1, 2 Propagation Delay 3 State Enable to Q TPLZ TPZL VDD = 10V VDD = 15V 1, 2, 4 +25 C - 70 ns Transition Time TTHL TTLH VDD = 10V 1, 2, 3 +25oC - 100 ns VDD = 15V 1, 2, 3 +25oC - 80 ns TW VDD = 5V 1, 2, 3 +25oC - 160 ns VDD = 10V 1, 2, 3 +25oC - 80 ns Minimum Set or Reset Pulse Width 1, 2, 4 VDD = 15V Input Capacitance CIN Any Input +25 C o 1, 2, 3 +25 C - 40 ns 1, 2 +25oC - 7.5 pF NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. CL = 50pF, RL = 1K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD N Threshold Voltage VNTH N Threshold Voltage Delta ∆VTN P Threshold Voltage VTP P Threshold Voltage Delta ∆VTP Functional F CONDITIONS NOTES TEMPERATURE VDD = 20V, VIN = VDD or GND 1, 4 +25oC VDD = 10V, ISS = -10µA 1, 4 +25oC VDD = 10V, ISS = -10µA 1, 4 +25oC VSS = 0V, IDD = 10µA 1, 4 VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND MAX UNITS - 7.5 µA -2.8 -0.2 V - ±1 V +25oC 0.2 2.8 V 1, 4 +25oC - ±1 V 1 +25oC VOH > VDD/2 VOL < VDD/2 V 1, 2, 3, 4 +25oC - 1.35 x +25oC Limit ns VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 3. See Table 2 for +25oC limit. NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER SYMBOL DELTA LIMIT Supply Current - MSI-1 IDD ± 0.2µA Output Current (Sink) IOL5 ± 20% x Pre-Test Reading IOH5A ± 20% x Pre-Test Reading Output Current (Source) 7-879 MIN Specifications CD4043BMS, CD4044BMS TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD GROUP A SUBGROUPS Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A 100% 5004 1, 7, 9, Deltas CONFORMANCE GROUP PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test 1, 7, 9 100% 5004 1, 7, 9, Deltas IDD, IOL5, IOH5A 100% 5004 2, 3, 8A, 8B, 10, 11 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample 5005 1, 7, 9 Sample 5005 1, 2, 3, 8A, 8B, 9 Group A Group B 100% 5004 Group D READ AND RECORD Subgroups 1, 2, 3, 9, 10, 11 Subgroups 1, 2 3 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 TEST READ AND RECORD MIL-STD-883 METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD 5005 1, 7, 9 Table 4 1, 9 Table 4 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION OPEN GROUND VDD 9V ± -0.5V 50kHz 25kHz 1, 2, 9, 12 4, 6, 12, 14 3, 7, 11, 15 1, 9, 10, 13 4, 6, 12, 14 3, 7, 11, 15 PART NUMBER CD4043BMS Static Burn-In 1 Note 1 1, 2, 9, 10, 13 3 - 8, 11, 12, 14, 15 16 Static Burn-In 2 Note 1 1, 2, 9, 10, 13 8 3 - 7, 11, 12, 14 - 16 Dynamic BurnIn Note 1 13 8 5, 16 1, 2, 9, 10, 13 8 3 - 7, 11, 12, 14 - 16 Irradiation Note 2 PART NUMBER CD4044BMS Static Burn-In 1 Note 1 1, 2, 9, 10, 13 3 - 8, 11, 12, 14, 15 16 Static Burn-In 2 Note 1 1, 2, 9, 10, 13 8 3 - 7, 11, 12, 14 - 16 Dynamic BurnIn Note 1 2 8 5, 16 1, 2, 9, 10, 13 8 3 - 7, 11, 12, 14 - 16 Irradiation Note 2 NOTE: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V 7-880 Specifications CD4043BMS, CD4044BMS Functional Diagram VDD VDD 16 16 S1 4 R1 3 S2 6 R2 7 S3 12 R3 11 S4 14 R4 ENABLE 15 LATCH 1 2 LATCH 2 9 LATCH 3 10 LATCH 4 1 5 13 R1 4 S1 3 R2 6 S2 7 R3 12 S3 11 R4 14 S4 15 Q1 Q2 Q3 Q4 ENABLE NC LATCH 1 13 Q1 LATCH 2 9 Q2 LATCH 3 10 Q3 LATCH 4 1 Q4 2 NC 5 8 8 VSS VSS CD4043BMS CD4044BMS Logic Diagram EQUIVALENT NOR LATCH E EQUIVALENT NAND LATCH VDD S1 * E VDD S1 * 4 3 Q1 Q1 2 13 R1 * R1 3 * E E * 5 VSS 4 E E * 5 E E VDD E VSS E VDD *ALL INPUTS ARE PROTECTED *ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK BY CMOS PROTECTION NETWORK VSS VSS CD4043BMS CD4044BMS TRUTH TABLE CD4043BMS CD4044BMS S R E Q S R E Q X X O OC* X X O OC* O O 1 NC** 1 1 1 NC** 1 O 1 1 O 1 1 1 O 1 1 O 1 O 1 O 1 1 1 ∆ O O 1 ∆∆ * Open Circuit * Open Circuit ** No Change ** No Change ∆ Dominated by S = 1 input ∆∆ Dominated by R = O input 7-881 CD4043BMS, CD4044BMS 30 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 25 20 15 10V 10 5 5V 0 5 10 15 AMBIENT TEMPERATURE (TA) = +25oC 15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 10V 7.5 5.0 2.5 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 1. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS FIGURE 2. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V 0 -5 -10 -15 -10V -20 -25 -15V -30 -5 -10V PROPAGATION DELAY TIME (tPHL, tPLH) (ns) TRANSITION TIME (tTHL, tTLH) (ns) SUPPLY VOLTAGE (VDD) = 5V 100 10V 15V 20 -15 FIGURE 4. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS 200 0 0 -10 -15V AMBIENT TEMPERATURE (TA) = +25oC 50 0 GATE-TO-SOURCE VOLTAGE (VGS) = -5V FIGURE 3. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS 150 0 AMBIENT TEMPERATURE (TA) = +25oC OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) 0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) AMBIENT TEMPERATURE (TA) = +25oC OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) Typical Performance Characteristics AMBIENT TEMPERATURE (TA) = +25oC 175 150 SUPPLY VOLTAGE (VDD) = 5V 125 100 10V 75 50 15V 25 0 40 60 80 100 LOAD CAPACITANCE (CL) (pF) 10 20 30 40 50 60 70 80 90 100 LOAD CAPACITANCE (CL) (pF) FIGURE 5. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE FIGURE 6. TYPICAL PROPAGATION DELAY TIME vs LOAD CAPACITANCE - SET, RESET, to Q, Q 7-882 CD4043BMS, CD4044BMS POWER DISSIPATION PER DEVICE (PD) (µW) Typical Performance Characteristics 106 (Continued) AMBIENT TEMPERATURE (TA) = +25oC 105 104 SUPPLY VOLTAGE (VDD) = 15V 103 10V 102 10V 5V 10 CL =15pF CL = 50pF 1 103 104 105 106 107 INPUT FREQUENCY (fI) (kHz) FIGURE 7. TYPICAL POWER DISSIPATION vs FREQUENCY VDD 1MΩ VDD OUTPUT S Q LATCH R 1MΩ OUTPUT S Q LATCH R 1MΩ 1MΩ VDD CD4044BMS CD4043BMS FIGURE 8. SWITCH BOUNCE ELIMINATOR TEST IN IN A tPHZ VDD VSS VSS tPLZ VSS VDD VDD VDD 1 16 2 15 3 4 ENABLE 14 tPZH 12 6 11 7 10 8 9 VSS VSS 50% 50% IN tPZL VSS VDD VDD IN Z = HIGH IMPEDANCE 1KΩ A VSS POINT A (IN = VDD, IN = VSS) tPHZ 10% POINT A (IN = VSS, IN = VDD) 90% tPZL CL = 50pF ≈ 2/3 VDD ≈ 1/3 VDD 10% tPLZ VSS FIGURE 9. ENABLE PROPAGATION DELAY TIME TEST CIRCUIT AND WAVEFORM 7-883 VDD 90% tPZH 13 5 VDD ENABLE ≈ 2/3 VDD ≈ 1/3 VDD CD4043BMS 1 BUS A 2 5 6 8 9 12 13 CD4001 3 4 10 11 1 OF 4 2 4 6 12 14 3 7 11 15 9 CD4043 10 1 LOAD A 5 ENABLE A 1 BUS B CD4001 3 4 10 11 2 5 6 8 9 12 13 2 4 6 12 14 3 7 11 15 9 CD4043 10 1 LOAD B 5 3 2 5 4 ENABLE B 1 BUS C CD4001 3 4 10 11 2 5 6 8 9 12 13 9 CD4043 10 1 LOAD C 5 ENABLE C 1 BUS D 2 5 6 8 9 12 13 CD4001 3 4 10 11 2 4 6 12 14 3 7 11 15 6 9 10 2 4 6 12 14 3 7 11 15 7 9 CD4043 10 1 LOAD D 5 ENABLE D RESET FIGURE 10. MULTIPLE BUS STORAGE 7-884 2/3 CD4009 OUTPUT DATA BUS CD4043BMS Chip Dimensions and Pad Layouts CD4043BMSH CD4044BMSH Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch) METALLIZATION: PASSIVATION: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 885 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029