CD4069UBMS CMOS Hex Inverter December 1992 Features Pinout • High Voltage Types (20V Rating) CD4069UBMS TOP VIEW • Standardized Symmetrical Output Characteristics • Medium Speed Operation: tPHL, tPLH = 30ns (typ) at 10V 14 VDD A 1 G=A 2 • 100% Tested for Quiescent Current at 20V 13 F B 3 • Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC 12 L = F H=B 4 • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” 11 E C 5 10 K = E I=C 6 9 D VSS 7 8 J=D Applications • Logic Inversion • Pulse Shaping Functional Diagram • Oscillators • High-Input-Impedance Amplifiers 1 Description G=A 3 CD4069UBMS types consist of six CMOS inverter circuits. These devices are intended for all general-purpose inverter applications where the medium-power TTL-drive and logiclevel conversion capabilities of circuits such as the CD4009 and CD4049 Hex Inverter/Buffers are not required. B The CD4069UBMS is supplied in these 14 lead outline packages: D Braze Seal DIP H4H Frit Seal DIP H1B Ceramic Flatpack H3W 2 A 4 H=B 5 6 C I=C 9 8 J=D 11 10 E VSS = 7 VDD = 14 K=E 13 F 12 L=F Schematic Diagram VDD VDD G=A G A 1(3, 5, 9, 11, 13) 2(4, 6, 8, 10, 12) VSS FIGURE 1. SCHEMATIC DIAGRAM OF 1 OF 6 IDENTICAL INVERTERS CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 7-464 File Number 3321 Specifications CD4069UBMS Absolute Maximum Ratings Reliability Information DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Thermal Resistance . . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W o Maximum Package Power Dissipation (PD) at +125 C For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND LIMITS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 0.5 µA - 50 µA - 0.5 µA 2 VDD = 18V, VIN = VDD or GND Input Leakage Current Input Leakage Current IIL IIH VIN = VDD or GND VIN = VDD or GND VDD = 20 +125 oC -55oC 3 o 1 +25 C -100 - nA 2 +125oC -1000 - nA VDD = 18V 3 -55oC -100 - nA VDD = 20 1 +25oC - 100 nA 2 +125oC - 1000 nA 3 -55oC - 100 nA - 50 mV - V VDD = 18V Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA - -1.8 mA - -1.4 mA Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -3.5 mA -2.8 -0.7 V 0.7 2.8 V Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC VSS = 0V, IDD = 10µA 1 +25oC VDD = 2.8V, VIN = VDD or GND 7 +25oC VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B P Threshold Voltage Functional VPTH F Input Voltage Low (Note 2) VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 Input Voltage High (Note 2) VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 Input Voltage Low (Note 2) VIL VDD = 15V, VOH > 13.5V, VOL < 1.5V Input Voltage High (Note 2) VIH VDD = 15V, VOH > 13.5V, VOL < 1.5V 7-465 V -55oC +25oC, NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. VOH > VOL < VDD/2 VDD/2 +125oC, -55oC - 1.0 V +25oC, +125oC, -55oC 4.0 - V 1, 2, 3 +25oC, +125oC, -55oC - 2.5 V 1, 2, 3 +25oC, +125oC, -55oC 12.5 - V 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. Specifications CD4069UBMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Propagation Delay Transition Time SYMBOL TPHL TPLH CONDITIONS (NOTES 1, 2) GROUP A SUBGROUPS TEMPERATURE VDD = 5V, VIN = VDD or GND 9 10, 11 TTHL TTLH VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC +25oC +125oC, -55oC LIMITS MIN MAX UNITS - 110 ns - 149 ns - 200 ns - 270 ns NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS NOTES VDD = 5V, VIN = VDD or GND VDD = 10V, VIN = VDD or GND 1, 2 1, 2 TEMPERATURE MIN MAX UNITS -55 C, +25 C - 0.25 µA +125oC - 7.5 µA -55oC, +25oC - 0.5 µA - 15 µA o o +125 VDD = 15V, VIN = VDD or GND 1, 2 oC - 0.5 µA +125oC - 30 µA -55oC, +25oC Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, -55oC - 50 mV Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -55oC 4.95 - V Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC 9.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA -55oC 0.64 - mA +125 C 0.9 - mA -55oC 1.6 - mA +125oC 2.4 - mA -55oC 4.2 - mA +125oC - -0.36 mA -55oC - -0.64 mA +125oC - -1.15 mA -55oC - -2.0 mA +125oC - -0.9 mA Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) Input Voltage Low IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VIL VDD = 10V, VOUT = 0.5V 1, 2 VDD = 15V, VOUT = 1.5V 1, 2 VDD = 5V, VOUT = 4.6V 1, 2 VDD = 5V, VOUT = 2.5V 1, 2 VDD = 10V, VOUT = 9.5V 1, 2 VDD =15V, VOUT = 13.5V 1, 2 VDD = 10V, VOH > 9V, VOL < 1V 1, 2 o -55oC - -2.6 mA +125oC - -2.4 mA -55oC - -4.2 mA +25oC, +125oC, - 2 V 8 - V -55oC Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 7-466 1, 2 +25oC, +125oC, -55oC Specifications CD4069UBMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER SYMBOL Propagation Delay TPHL TPLH Transition Time VDD = 10V TTHL TTLH Input Capacitance CONDITIONS TEMPERATURE MIN MAX UNITS 1, 2, 3 +25oC - 60 ns o VDD = 15V 1, 2, 3 +25 C - 50 ns VDD = 10V 1, 2, 3 +25oC - 100 ns 1, 2, 3 oC - 80 ns +25oC - 15 pF VDD = 15V CIN NOTES Any Input +25 1, 2 NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 2.5 µA 1, 4 +25oC -2.8 -0.2 V VDD = 10V, ISS = -10µA 1, 4 +25oC - ±1 V VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V 1, 4 +25oC - ±1 V 1 +25oC VOH > VDD/2 VOL < VDD/2 V 1, 2, 3, 4 +25oC - 1.35 x +25oC Limit ns Supply Current N Threshold Voltage VNTH N Threshold Voltage Delta ∆VTN P Threshold Voltage VTP P Threshold Voltage Delta ∆VTP Functional F VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 3. See Table 2 for +25oC limit. NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER SYMBOL DELTA LIMIT Supply Current - SSI IDD ±0.1µA Output Current (Sink) IOL5 ± 20% x Pre-Test Reading IOH5A ± 20% x Pre-Test Reading Output Current (Source) TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD GROUP A SUBGROUPS Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A 100% 5004 1, 7, 9, Deltas 100% 5004 1, 7, 9 CONFORMANCE GROUP PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A 100% 5004 1, 7, 9, Deltas 100% 5004 2, 3, 8A, 8B, 10, 11 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 7-467 READ AND RECORD IDD, IOL5, IOH5A Specifications CD4069UBMS TABLE 6. APPLICABLE SUBGROUPS (Continued) MIL-STD-883 METHOD GROUP A SUBGROUPS Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample 5005 1, 7, 9 Sample 5005 1, 2, 3, 8A, 8B, 9 CONFORMANCE GROUP Group B Group D READ AND RECORD Subgroups 1, 2, 3, 9, 10, 11 Subgroups 1, 2 3 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS TEST READ AND RECORD MIL-STD-883 METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD 5005 1, 7, 9 Table 4 1, 9 Table 4 Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR OPEN GROUND VDD Static Burn-In 1 (Note 1) FUNCTION 2, 4, 6, 8, 10, 12 1, 3, 5, 7, 9, 11, 13 14 Static Burn-In 2 (Note 1) 2, 4, 6, 8, 10, 12 7 1, 3, 5, 9, 11, 13, 14 Dynamic Burn-In (Note 1) - 7 14 2, 4, 6, 8, 10, 12 7 1, 3, 5, 9, 11, 13, 14 Irradiation (Note 2) 9V ± -0.5V 50kHz 2, 4, 6, 8, 10, 12 1, 3, 5, 9, 11, 13 25kHz NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V Typical Performance Characteristics 17.5 VI VO 15.0 12.5 10V 10.0 7.5 5V 5.0 SUPPLY VOLTAGE (VDD) = 15V 15.0 AMBIENT TEMPERATURE (TA) = +125oC 12.5 10V +125oC 5V 5.0 7.5 10.0 12.5 INPUT VOLTAGE (VI) (V) 0 15.0 -55oC 5.0 2.5 2.5 -55oC 7.5 2.5 0 -55oC 10.0 +125oC SUPPLY VOLTAGE (VDD) = 15V OUTPUT VOLTAGE (VO) (V) OUTPUT VOLTAGE (VO) (V) AMBIENT TEMPERATURE (TA) = +25oC 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 INPUT VOLTAGE (VI) (V) FIGURE 2. MINIMUM AND MAXIMUM VOLTAGE TRANSFER CHARACTERISTICS FIGURE 3. TYPICAL VOLTAGE TRANSFER CHARACTERISTICS AS A FUNCTION OF TEMPERATURE All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 468 CD4069UBMS Typical Performance Characteristics (Continued) SUPPLY VOLTAGE (VDD) = 15V 12.5 15.0 12.5 10V ID 10.0 10.0 15V 7.5 7.5 5V 5.0 5.0 10V 2.5 2.5 5V 0 2.5 0 5.0 30 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 25 20 15 10V 10 5 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 7.5 10.0 12.5 15.0 INPUT VOLTAGE (VI) (V) FIGURE 4. TYPICAL CURRENT AND VOLTAGE TRANSFER CHARACTERISTICS) OUTPUT LOW (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) = +25oC FIGURE 5. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V 15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 0 0 -5 -10 12.5 -15 10.0 -10V 10V 7.5 -20 -25 5.0 -15V 2.5 -30 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) AMBIENT TEMPERATURE (TA) = +25oC 0 0 GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5 -10V -15V -10 -15 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 FIGURE 7. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS PROPAGATION DELAY TIME (tPLH, tPHL) (ns) FIGURE 6. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) OUTPUT VOLTAGE (VO) (V) 15.0 17.5 OUTPUT LOW (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) = +25oC SUPPLY CURRENT (IDD) (mA) 17.5 AMBIENT TEMPERATURE (TA) = +25oC 100 SUPPLY VOLTAGE (VDD) = 5V 80 60 10V 40 15V 20 0 FIGURE 8. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) FIGURE 9. TYPICAL PROPAGATION DELAY TIME vs LOAD CAPACITANCE 7-469 CD4069UBMS AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC TRANSITION TIME (tTHL, tTLH) (ns) PROPAGATION DELAY TIME (tPHL, tPLH) (ns) Typical Performance Characteristics (Continued) 120 100 80 60 40 LOAD CAPACITANCE (CL) = 50pF 20 200 SUPPLY VOLTAGE (VDD) = 5V 150 100 10V 15V 50 15pF 0 5 10 15 SUPPLY VOLTAGE (VDD) (V) 0 0 20 FIGURE 10. TYPICAL PROPAGATION DELAY TIME vs SUPPLY VOLTAGE 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) FIGURE 11. TYPICAL TRANSITION TIME vs LOAD CAPACITANCE 6 4 NORMALIZED PROPAGATION DELAY TIME (tPHL, tPLH) POWER DISSIPATION PER INVERTER (µW) 105 8 SUPPLY VOLTAGE (VDD) = 15V 2 104 8 6 4 2 103 8 10V 6 4 10V 2 102 5V 8 6 4 LOAD CAPACITANCE (CL) = 50pF (11pF FIXTURE + 39pF EXT) CL = 15pF (11pF FIXTURE +4pF EXT) AMBIENT TEMPERATURE (TA) = +25oC 2 10 2 4 6 8 2 4 6 8 2 4 6 8 103 104 102 INPUT FREQUENCY (fI) (kHz) 10 2 AMBIENT TEMPERATURE (TA) = -40oC TO +125oC 5 4 3 2 1 4 6 8 2 105 FIGURE 12. TYPICAL DYNAMIC POWER DISSIPATION vs FREQUENCY 4 6 8 10 12 SUPPLY VOLTAGE (VDD) VOLTS 14 FIGURE 13. VARIATION OF NORMALIZED PROPAGATION DELAY TIME (tPHL AND tPLH) WITH SUPPLY VOLTAGE VDD PULSE GEN. tr = tf = 20ns IN 50Ω 1 14 2 13 3 12 4 11 5 10 6 9 7 8 tr tf VDD 90% 50% 10% INPUT tTHL OUT CL = 50pF 16 tTLH 200kΩ tPHL tPLH FIGURE 14. DYNAMIC ELECTRICAL CHARACTERISTICS TEST CIRCUIT AND WAVEFORMS 7-470 VDD 90% 50% 10% INVERTING OUTPUT 0 0 CD4069UBMS 1/3 CD4069 1/6 CD4069 OUT IN RT RS CT FOR TYPICAL COMPONENT VALUES AND CIRCUIT PERFORMANCE, SEE APPLICATION NOTE AN-6466 Rf ≈ 10 MEG FIGURE 15. HIGH-INPUT IMPEDANCE AMPLIFIER FIGURE 16. TYPICAL RC OSCILLATOR CIRCUIT 1/3 CD4069 RS IN 1/6 CD4069 FOR TYPICAL COMPONENT VALUES AND CIRCUIT PERFORMANCE, SEE APPLICATION NOTES: AN-6086 AND AN-6539 Rf XTAL CS OUT Rf UPPER SWITCHING POINT RS VP ≈ RS + Rf VDD Rf 2 • LOWER SWITCHING POINT CT VN ≈ VDD Rf - RS 2 Rf Rf > RS FIGURE 17. TYPICAL CRYSTAL OSCILLATOR CIRCUIT • FIGURE 18. INPUT PULSE SHAPING CIRCUIT (SCHMITT TRIGGER) Chip Dimensions and Pad Layout 6 5 4 3 2 7 1 14 8 13 9 10 11 12 Dimension in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: PASSIVATION: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches 7-471 DIE SIZE: 48 X 48 (45 - 53) (1.143 - 1.346)