RCJ450N20 : Transistors

RCJ450N20
Nch 200V 45A Power MOSFET
Datasheet
lOutline
VDSS
200V
RDS(on) (Max.)
55mW
ID
45A
PD
40W
LPT(S)
(SC-83)
TO-263(D2PAK)
(1)
(2)
(3)
lFeatures
lInner circuit
1) Low on-resistance.
2) Fast switching speed.
(1) Gate
(2) Drain
(3) Source
3) Drive circuits can be simple.
4) Parallel use is easy.
*1 BODY DIODE
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lPackaging specifications
Packaging
lApplication
Switching Power Supply
Taping
Reel size (mm)
330
Tape width (mm)
24
Type
Automotive Motor Drive
Basic ordering unit (pcs)
Automotive Solenoid Drive
Taping code
1,000
TL
Marking
RCJ450N20
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
VDSS
200
V
Tc = 25°C
ID *1
45
A
Tc = 100°C
ID *1
24.4
A
ID,pulse *2
180
A
Gate - Source voltage
VGSS
30
V
Avalanche energy, single pulse
EAS *3
160
mJ
Avalanche current
IAR *3
22.5
A
PD
40
W
PD
1.56
W
Tj
150
°C
Tstg
-55 to +150
°C
Drain - Source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Tc = 25°C
Ta = 25°C
*4
Junction temperature
Range of storage temperature
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© 2013 ROHM Co., Ltd. All rights reserved.
1/12
2013.04 - Rev.A
Data Sheet
RCJ450N20
lThermal resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case
RthJC
-
-
3.13
°C/W
Thermal resistance, junction - ambient *4
RthJA
-
-
80
°C/W
Soldering temperature, wavesoldering for 10s
Tsold
-
-
265
°C
lElectrical characteristics (Ta = 25°C)
Values
Parameter
Drain - Source breakdown voltage
Symbol
V(BR)DSS
Conditions
VGS = 0V, ID = 1.0mA
Unit
Min.
Typ.
Max.
200
-
-
-
-
1.0
V
VDS = 200V, VGS = 0V
Zero gate voltage
drain current
IDSS
Tj = 25°C
mA
VDS = 200V, VGS = 0V
-
-
100
Tj = 125°C
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
IGSS
VGS = 30V, VDS = 0V
-
-
100
nA
VGS (th)
VDS = 10V, ID = 1mA
3.0
-
5.0
V
VGS = 10V, ID = 22.5A
-
42
55
-
95
125
10
20
-
RDS(on) *5 VGS = 10V, ID = 22.5A
mW
Tj = 125°C
Forward transfer admittance
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gfs
VDS = 10V, ID = 22.5A
2/12
S
2013.04 - Rev.A
Data Sheet
RCJ450N20
lElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
4200
-
Output capacitance
Coss
VDS = 25V
-
270
-
Reverse transfer capacitance
Crss
f = 1MHz
-
160
-
VDD ⋍ 100V, VGS = 10V
-
52
-
tr *5
ID = 22.5A
-
210
-
td(off) *5
RL = 4.4W
-
90
-
tf *5
RG = 10W
-
70
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *5
pF
ns
lGate Charge characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Total gate charge
Qg *5
VDD ⋍ 100V
-
80
-
Gate - Source charge
Qgs *5
ID = 45A
-
28
-
Gate - Drain charge
Qgd
VGS = 10V
-
28
-
VDD ⋍ 100V, ID = 45A
-
7.2
-
Gate plateau voltage
*5
V(plateau)
nC
V
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Parameter
Continuous source current
Symbol
IS *1
Pulsed source current
ISM *2
Forward voltage
VSD *5
Reverse recovery time
trr *5
Reverse recovery charge
Qrr *5
Conditions
Unit
Min.
Typ.
Max.
-
-
45
A
-
-
104
A
VGS = 0V, IS = 26A
-
-
1.5
V
IS = 22.5A
di/dt = 100A/ms
-
130
-
ns
-
600
-
nC
Tc = 25°C
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 L ⋍ 500mH, VDD = 50V, Rg = 25W, starting Tj = 25°C
*4 Mounted on a epoxy PCB FR4 (25mm × 27mm × 0.8mm)
*5 Pulsed
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© 2013 ROHM Co., Ltd. All rights reserved.
3/12
2013.04 - Rev.A
Data Sheet
RCJ450N20
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
1000
PW = 100ms
100
100
Drain Current : ID [A]
Power Dissipation : PD/PD max. [%]
120
80
60
40
10
Operation in this
area is limited
by RDS(on)
1
PW = 10ms
0.1
20
Ta=25ºC
Single Pulse
0
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
Normalized Transient Thermal Resistance : r(t)
PW = 1ms
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
10
Ta = 25ºC
Single Pulse
Rth(j-c)(t) = r(t)×Rth(ch-c)
Rth(j-c) = 80ºC/W
1
0.1
0.01
0.0001
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01
1
100
Pulse Width : PW [s]
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4/12
2013.04 - Rev.A
Data Sheet
RCJ450N20
lElectrical characteristic curves
Fig.5 Avalanche Energy Derating Curve
vs Junction Temperature
Fig.4 Avalanche Current vs Inductive Load
120
Avalanche Energy : EAS / EAS max. [%]
Avalanche Current : IAS [A]
100
VDD=50V,RG=25W
VGF=10V,VGR=0V
Starting Tch=25ºC
10
1
0.01
100
80
60
40
20
0
0.1
1
10
0
100
Coil Inductance : L [mH]
50
75
100
125
150
175
Junction Temperature : Tj [°C]
Fig.7 Typical Output Characteristics(II)
Fig.6 Typical Output Characteristics(I)
20
45
Ta=25ºC
Pulsed
VGS=10.0V
VGS=10.0V
40
15
VGS=7.0V
10
VGS=6.5V
5
Ta=25ºC
Pulsed
VGS=8.0V
VGS=8.0V
Drain Current : ID [A]
Drain Current : ID [A]
25
35
30
25
20
VGS=7.0V
15
VGS=6.5V
10
VGS=5.5V VGS=6.0V
5
VGS=6.0V
0
0
0
0.2
0.4
0.6
0.8
0
1
4
6
8
10
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
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© 2013 ROHM Co., Ltd. All rights reserved.
2
5/12
2013.04 - Rev.A
Data Sheet
RCJ450N20
lElectrical characteristic curves
Fig.9 Typical Transfer Characteristics
100
280
270
VGS = 0V
ID = 1mA
VDS= 10V
10
260
Drain Current : ID [A]
Normarize Drain - Source Breakdown Voltage
: V(BR)DSS [V]
Fig.8 Breakdown Voltage
vs. Junction Temperature
250
240
230
220
210
1
0.1
0.01
200
190
0.001
180
-50 -25
0
25
50
75
0
100 125 150
Junction Temperature : Tj [°C]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
2
4
6
8
10
Gate - Source Voltage : VGS [V]
Fig.11 Transconductance vs. Drain Current
100
5.0
VDS= 10V
VDS = 10V
ID = 1mA
Transconductance : gfs [S]
Gate Threshold Voltage : VGS(th) [V]
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
4.5
4.0
3.5
10
1
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
3.0
2.5
-50 -25
0
25
50
75
100 125 150
0.01
0.01
Junction Temperature : Tj [°C]
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0.1
1
10
100
Drain Current : ID [A]
6/12
2013.04 - Rev.A
Data Sheet
RCJ450N20
lElectrical characteristic curves
100
Ta=25ºC
90
80
ID = 22.5A
70
ID = 45A
60
50
40
30
0
5
10
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
15
20
1000
Ta=25ºC
VGS = 10V
100
10
1
0.01
Gate - Source Voltage : VGS [V]
0.1
1
10
100
Drain Current : ID [A]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
100
80
VGS = 10V
ID = 22.5A
60
40
20
0
-50 -25
0
25
50
75
100 125 150
Junction Temperature : Tj [ºC]
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7/12
2013.04 - Rev.A
Data Sheet
RCJ450N20
lElectrical characteristic curves
Fig.16 Drain Current Derating Curve
1000
120
VGS= 10V
Drain Current Dissipation
: ID/ID max. (%)
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(I)
100
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
10
100
80
60
40
20
1
0
0.01
0.1
1
10
100
0
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
Drain Current : ID [A]
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© 2013 ROHM Co., Ltd. All rights reserved.
25
8/12
2013.04 - Rev.A
Data Sheet
RCJ450N20
lElectrical characteristic curves
Fig.17 Typical Capacitance
vs. Drain - Source Voltage
Fig.18 Switching Characteristics
100000
1000
10000
Switching Time : t [ns]
Capacitance : C [pF]
tf
Ciss
1000
Coss
100
Ta = 25ºC
f = 1MHz
VGS = 0V
td(off)
100
td(on)
Ta=25ºC
VDD= 100V
VGS= 10V
RG=10W
tr
Crss
10
10
0.01
0.1
1
10
100
1000
0.1
Drain - Source Voltage : VDS [V]
1
10
100
Drain Current : ID [A]
Fig.19 Dynamic Input Characteristics
Gate - Source Voltage : VGS [V]
20
Ta=25ºC
VDD= 100V
ID= 45A
RG=10W
18
16
14
12
10
8
6
4
2
0
0
20
40
60
80
100 120 140 160
Total Gate Charge : Qg [nC]
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9/12
2013.04 - Rev.A
Data Sheet
RCJ450N20
lElectrical characteristic curves
Fig21 Reverse Recovery Time
vs.Source Current
Fig.20 Source Current
vs. Source - Drain Voltage
1000
100
Reverse Recovery Time : trr [ns]
Source Current : IS [A]
VGS=0V
10
1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.1
100
Ta=25ºC
di / dt = 100A / ms
VGS = 0V
10
0.01
0.0
0.5
1.0
0.1
1.5
10
100
Source Current : IS [A]
Source-Drain Voltage : VSD [V]
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© 2013 ROHM Co., Ltd. All rights reserved.
1
10/12
2013.04 - Rev.A
Data Sheet
RCJ450N20
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
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11/12
2013.04 - Rev.A
Data Sheet
RCJ450N20
D
A2
A
B
c1
L2
lDimensions (Unit : mm)
E
L3
LPTS
H
A1
L4
Lp
b2
e
b
x
L1
L
b3
c
A3
B A
l3
l1
e
b6
b5
l2
Pattern of terminal position areas
[Not a recommended pattern of soldering
DIM
A1
A2
A3
b
b2
b3
c
c1
D
E
e
HE
L
L1
L2
L3
L4
Lp
x
DIM
b5
b6
l1
l2
l3
MILIMETERS
MIN
MAX
0.00
4.30
0.68
1.14
0.30
1.10
9.80
8.80
12.80
2.70
0.90
0.90
-
0.25
8.90
2.54
1.10
7.25
1.00
MIN
0.30
4.70
0.000
0.169
0.98
0.027
1.44
0.60
1.50
10.40
9.20
0.045
0.012
0.043
0.386
0.346
13.40
3.30
1.50
0.504
0.106
0.035
1.50
0.25
0.035
-
MILIMETERS
MIN
MAX
MIN
-
1.23
10.40
2.10
7.55
13.40
-
INCHES
MAX
0.012
0.185
0.010
0.350
0.100
0.043
0.285
0.039
INCHES
0.039
0.057
0.024
0.059
0.409
0.362
0.528
0.130
0.059
0.059
0.010
MAX
0.049
0.409
0.083
0.297
0.528
Dimension in mm / inches
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12/12
2013.04 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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R1102A