RCJ450N20 Nch 200V 45A Power MOSFET Datasheet lOutline VDSS 200V RDS(on) (Max.) 55mW ID 45A PD 40W LPT(S) (SC-83) TO-263(D2PAK) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging lApplication Switching Power Supply Taping Reel size (mm) 330 Tape width (mm) 24 Type Automotive Motor Drive Basic ordering unit (pcs) Automotive Solenoid Drive Taping code 1,000 TL Marking RCJ450N20 lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS 200 V Tc = 25°C ID *1 45 A Tc = 100°C ID *1 24.4 A ID,pulse *2 180 A Gate - Source voltage VGSS 30 V Avalanche energy, single pulse EAS *3 160 mJ Avalanche current IAR *3 22.5 A PD 40 W PD 1.56 W Tj 150 °C Tstg -55 to +150 °C Drain - Source voltage Continuous drain current Pulsed drain current Power dissipation Tc = 25°C Ta = 25°C *4 Junction temperature Range of storage temperature www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/12 2013.04 - Rev.A Data Sheet RCJ450N20 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - - 3.13 °C/W Thermal resistance, junction - ambient *4 RthJA - - 80 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C lElectrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions VGS = 0V, ID = 1.0mA Unit Min. Typ. Max. 200 - - - - 1.0 V VDS = 200V, VGS = 0V Zero gate voltage drain current IDSS Tj = 25°C mA VDS = 200V, VGS = 0V - - 100 Tj = 125°C Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance IGSS VGS = 30V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 3.0 - 5.0 V VGS = 10V, ID = 22.5A - 42 55 - 95 125 10 20 - RDS(on) *5 VGS = 10V, ID = 22.5A mW Tj = 125°C Forward transfer admittance www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. gfs VDS = 10V, ID = 22.5A 2/12 S 2013.04 - Rev.A Data Sheet RCJ450N20 lElectrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V - 4200 - Output capacitance Coss VDS = 25V - 270 - Reverse transfer capacitance Crss f = 1MHz - 160 - VDD ⋍ 100V, VGS = 10V - 52 - tr *5 ID = 22.5A - 210 - td(off) *5 RL = 4.4W - 90 - tf *5 RG = 10W - 70 - Turn - on delay time Rise time Turn - off delay time Fall time td(on) *5 pF ns lGate Charge characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *5 VDD ⋍ 100V - 80 - Gate - Source charge Qgs *5 ID = 45A - 28 - Gate - Drain charge Qgd VGS = 10V - 28 - VDD ⋍ 100V, ID = 45A - 7.2 - Gate plateau voltage *5 V(plateau) nC V lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Values Parameter Continuous source current Symbol IS *1 Pulsed source current ISM *2 Forward voltage VSD *5 Reverse recovery time trr *5 Reverse recovery charge Qrr *5 Conditions Unit Min. Typ. Max. - - 45 A - - 104 A VGS = 0V, IS = 26A - - 1.5 V IS = 22.5A di/dt = 100A/ms - 130 - ns - 600 - nC Tc = 25°C *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 L ⋍ 500mH, VDD = 50V, Rg = 25W, starting Tj = 25°C *4 Mounted on a epoxy PCB FR4 (25mm × 27mm × 0.8mm) *5 Pulsed www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 3/12 2013.04 - Rev.A Data Sheet RCJ450N20 lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 1000 PW = 100ms 100 100 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] 120 80 60 40 10 Operation in this area is limited by RDS(on) 1 PW = 10ms 0.1 20 Ta=25ºC Single Pulse 0 0.01 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Normalized Transient Thermal Resistance : r(t) PW = 1ms Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 10 Ta = 25ºC Single Pulse Rth(j-c)(t) = r(t)×Rth(ch-c) Rth(j-c) = 80ºC/W 1 0.1 0.01 0.0001 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 1 100 Pulse Width : PW [s] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 4/12 2013.04 - Rev.A Data Sheet RCJ450N20 lElectrical characteristic curves Fig.5 Avalanche Energy Derating Curve vs Junction Temperature Fig.4 Avalanche Current vs Inductive Load 120 Avalanche Energy : EAS / EAS max. [%] Avalanche Current : IAS [A] 100 VDD=50V,RG=25W VGF=10V,VGR=0V Starting Tch=25ºC 10 1 0.01 100 80 60 40 20 0 0.1 1 10 0 100 Coil Inductance : L [mH] 50 75 100 125 150 175 Junction Temperature : Tj [°C] Fig.7 Typical Output Characteristics(II) Fig.6 Typical Output Characteristics(I) 20 45 Ta=25ºC Pulsed VGS=10.0V VGS=10.0V 40 15 VGS=7.0V 10 VGS=6.5V 5 Ta=25ºC Pulsed VGS=8.0V VGS=8.0V Drain Current : ID [A] Drain Current : ID [A] 25 35 30 25 20 VGS=7.0V 15 VGS=6.5V 10 VGS=5.5V VGS=6.0V 5 VGS=6.0V 0 0 0 0.2 0.4 0.6 0.8 0 1 4 6 8 10 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 2 5/12 2013.04 - Rev.A Data Sheet RCJ450N20 lElectrical characteristic curves Fig.9 Typical Transfer Characteristics 100 280 270 VGS = 0V ID = 1mA VDS= 10V 10 260 Drain Current : ID [A] Normarize Drain - Source Breakdown Voltage : V(BR)DSS [V] Fig.8 Breakdown Voltage vs. Junction Temperature 250 240 230 220 210 1 0.1 0.01 200 190 0.001 180 -50 -25 0 25 50 75 0 100 125 150 Junction Temperature : Tj [°C] Fig.10 Gate Threshold Voltage vs. Junction Temperature 2 4 6 8 10 Gate - Source Voltage : VGS [V] Fig.11 Transconductance vs. Drain Current 100 5.0 VDS= 10V VDS = 10V ID = 1mA Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 4.5 4.0 3.5 10 1 Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 3.0 2.5 -50 -25 0 25 50 75 100 125 150 0.01 0.01 Junction Temperature : Tj [°C] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 Drain Current : ID [A] 6/12 2013.04 - Rev.A Data Sheet RCJ450N20 lElectrical characteristic curves 100 Ta=25ºC 90 80 ID = 22.5A 70 ID = 45A 60 50 40 30 0 5 10 Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 15 20 1000 Ta=25ºC VGS = 10V 100 10 1 0.01 Gate - Source Voltage : VGS [V] 0.1 1 10 100 Drain Current : ID [A] Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature 100 80 VGS = 10V ID = 22.5A 60 40 20 0 -50 -25 0 25 50 75 100 125 150 Junction Temperature : Tj [ºC] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 7/12 2013.04 - Rev.A Data Sheet RCJ450N20 lElectrical characteristic curves Fig.16 Drain Current Derating Curve 1000 120 VGS= 10V Drain Current Dissipation : ID/ID max. (%) Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(I) 100 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 10 100 80 60 40 20 1 0 0.01 0.1 1 10 100 0 50 75 100 125 150 175 Junction Temperature : Tj [ºC] Drain Current : ID [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 25 8/12 2013.04 - Rev.A Data Sheet RCJ450N20 lElectrical characteristic curves Fig.17 Typical Capacitance vs. Drain - Source Voltage Fig.18 Switching Characteristics 100000 1000 10000 Switching Time : t [ns] Capacitance : C [pF] tf Ciss 1000 Coss 100 Ta = 25ºC f = 1MHz VGS = 0V td(off) 100 td(on) Ta=25ºC VDD= 100V VGS= 10V RG=10W tr Crss 10 10 0.01 0.1 1 10 100 1000 0.1 Drain - Source Voltage : VDS [V] 1 10 100 Drain Current : ID [A] Fig.19 Dynamic Input Characteristics Gate - Source Voltage : VGS [V] 20 Ta=25ºC VDD= 100V ID= 45A RG=10W 18 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Total Gate Charge : Qg [nC] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 9/12 2013.04 - Rev.A Data Sheet RCJ450N20 lElectrical characteristic curves Fig21 Reverse Recovery Time vs.Source Current Fig.20 Source Current vs. Source - Drain Voltage 1000 100 Reverse Recovery Time : trr [ns] Source Current : IS [A] VGS=0V 10 1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.1 100 Ta=25ºC di / dt = 100A / ms VGS = 0V 10 0.01 0.0 0.5 1.0 0.1 1.5 10 100 Source Current : IS [A] Source-Drain Voltage : VSD [V] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1 10/12 2013.04 - Rev.A Data Sheet RCJ450N20 lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 11/12 2013.04 - Rev.A Data Sheet RCJ450N20 D A2 A B c1 L2 lDimensions (Unit : mm) E L3 LPTS H A1 L4 Lp b2 e b x L1 L b3 c A3 B A l3 l1 e b6 b5 l2 Pattern of terminal position areas [Not a recommended pattern of soldering DIM A1 A2 A3 b b2 b3 c c1 D E e HE L L1 L2 L3 L4 Lp x DIM b5 b6 l1 l2 l3 MILIMETERS MIN MAX 0.00 4.30 0.68 1.14 0.30 1.10 9.80 8.80 12.80 2.70 0.90 0.90 - 0.25 8.90 2.54 1.10 7.25 1.00 MIN 0.30 4.70 0.000 0.169 0.98 0.027 1.44 0.60 1.50 10.40 9.20 0.045 0.012 0.043 0.386 0.346 13.40 3.30 1.50 0.504 0.106 0.035 1.50 0.25 0.035 - MILIMETERS MIN MAX MIN - 1.23 10.40 2.10 7.55 13.40 - INCHES MAX 0.012 0.185 0.010 0.350 0.100 0.043 0.285 0.039 INCHES 0.039 0.057 0.024 0.059 0.409 0.362 0.528 0.130 0.059 0.059 0.010 MAX 0.049 0.409 0.083 0.297 0.528 Dimension in mm / inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 12/12 2013.04 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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