PHOTOMULTIPLIER TUBES R2658 R2658P (for Photon Counting) High QE in Near IR Region Due to InGaAs (Cs) Photocathode For Spectrophotometers with 185 to 1010 nm Range, Fluorescence and Laser Applications and Photon Counting (R2658P) in the Near Infrared Region, etc. FEATURES ●High QE in Near IR Region .......................... QE 0.13% at 1000 nm ●Wide Wavelength Range ........................................ 185 to 1010 nm ●Low Dark Current .......................................... 1 nA at 1250 V (Typ.) The R2658 and the R2658P are 28 mm (1-1/8 inch) diameter sideon photomultiplier tubes using a newly developed InGaAs semiconductor photocathode. The InGaAs photocathode is sensitive from UV to near IR radiations (as long as over 1010 nm) longer than wavelength limit of GaAs photocathode, and yet offers low dark current. The dark current is 2 orders lower than the commercial S-1 photocathode. Therefore, they are well suited for low light detection in the near IR region including fluorescence lifetime measurements. Time response, gain, and dimensions are identical with the conventional 28 mm (1-1/8 inch) diameter side-on tubes with a GaAs photocathode. The R2658P is a photon counting version of the R2658 with low dark counts. Figure 1: Typical Spectral Response SPECIFICATIONS TPMSB0150EB 100 CATHODE RADIANT SENSITIVITY Parameter Spectral Response Wavelength of Maximum Response Photocathode MateriaI Minimum Effective Area Window Material Secondary Emitting Surface Dynode Structure Number of Stages Direct Anode to Last Dynode Interelectrode Capacitances Anode to All Other Electrode Base Description / Value Unit 185 to 1010 nm 400 nm InGaAs (Cs) — 3 × 12 mm UV glass — Cu-BeO — Circular-cage — 9 — Approx. 4 pF Approx. 6 pF 11-pin base JEDEC No. B11-88 — Weight Approx. 45 g Suitable Socket (Option) E678-11A — E717-63 — Suitable Socket Assembly (Option) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) GENERAL 10 QUANTUM EFFICIENCY 1 0.1 0.01 100 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2013 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBES R2658, R2658P (For Photon Counting) MAXIMUM RATINGS (Absolute Maximum Values) Supply Voltage Average Anode NOTES Value Unit A: Averaged over any interval of 30 seconds maximum. Between Anode and Cathode 1500 Vdc Between Anode and Last Dynode 250 Vdc 1 µA B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 100 volts between the cathode and all other electrodes connected together as anode. -30 to +50 °C Parameter Current A Ambient Temperature D: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. CHARACTERISTICS (at 25°C) Parameter Min. Typ. Max. Unit Quantum at 330 nm — 14 — % Efficiency at 1000 nm 0.02 0.13 — % 50 100 — µA/lm Luminous B at 194 nm — 20 — mA/W at 254 nm — 23 — mA/W at 400 nm — 40 — mA/W at 633 nm — 19 — mA/W at 852 nm — 7.6 — mA/W at 1000 nm 0.16 1 — mA/W 0.25 0.4 — — 5 16 — A/lm at 194 nm — 3.2 × 103 — A/W at 254 nm — 3.7 × 103 — A/W — 6.4 × 103 — A/W — 3.0 × 103 — A/W — 1.2 × 103 — A/W — 1.6 × 102 — A/W Gain D — 1.6 × 105 — — Anode Dark Current E — 1 10 nA Anode Dark Count (for the R2658P) F — 50 300 s-1 ENI (Equivalent Noise Input) G — 1.1 × 10-15 — W — 2.0 — ns — 20 — ns Anode Current Current Hysteresis — 2 — % Stability K — 2 — % Cathode Sensitivity Radiant Red / White Ratio C Luminous D Anode Sensitivity Radiant at 400 nm at 633 nm at 852 nm at 1000 nm Anode Pulse Time Rise Time H Response D Electron Transit Time J Voltage Hysteresis Table 1: Voltage Distribution Ratio Electrodes Distribution Ratio K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 Supply Voltage= 1250 Vdc K: Cathode, Dy: Dynode, P: Anode 1 C: Red / white ratio is the quotient of the cathode current measured using a red filter (Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same condition as Note B. 1 1 1 1 P 1 E: Measured with the same supply voltage and the voltage distribution ratio as Note D after 30 minute storage in the darkness. F: Measured at the voltage producing the gain of 1 × 106 and the voltage distribution ratio shown in table 1 below. The photocathode is cooled at -20 °C. G: ENI is an indication of the photo-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = 2q•ldb•G•∆f S where q = Electronic charge (1.60 × 10-19 coulomb) ldb = Anode dark current (after 30 minute storage) in amperes G = Gain ∆f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. H: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. J: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. K: Hysteresis is temporary instability in anode current after light and voltage are applied. Figure 2: Anode Luminous Sensitivity and Gain Characteristics Figure 3: Typical Time Response TPMSB0152EB 106 200 102 105 100 80 60 101 G L CA PI DE SE DE TY TRANSIT VI TI A L CA SE 103 NO PI TY UM A M NI I 10-1 M 40 104 I NS NO 100 V TI I NS TY Y IT TIME (ns) N AI GAIN ANODE LUMINOUS SENSITIVITY (A/lm) TPMSB0151EB 103 102 TIME 20 10 8 6 4 10-2 RISE TIM 101 E 2 10-3 500 700 1000 1500 100 2000 1 500 700 SUPPLY VOLTAGE (V) 1000 1500 SUPPLY VOLTAGE (V) Figure 5: Typical Temperature Characteristic of Dark Current and Dark Count (R2658P) Figure 4: Temperature Coefficient TPMSB0153EA TPMSB0154EC 0.8 10-6 106 10-7 105 -0.8 -1.0 -1.2 R2 65 8P T EN RR 103 10-10 102 10-11 101 -1.4 -1.6 400 500 600 700 800 WAVELENGTH (nm) 900 1000 10-12 -30 -20 -10 0 10 20 30 TEMPERATURE (°C) 40 100 50 ANODE DARK COUNT (s-1) -0.6 10-9 CU -0.4 104 DA RK -0.2 10-8 O F 0 CO UN T 0.2 DA RK 0.4 ANODE DARK CURRENT (A) TEMPERATURE COEFFICIENT (%/°C) 0.6 PHOTOMULTIPLIER TUBES R2658, R2658P (For Photon Counting) Figure 6: Dimensional Outline and Basing Diagram (Unit: mm) T9 BULB 28.5 ± 1.5 3 MIN. PHOTOCATHODE DY5 5 DY6 6 7 80 MAX. 94 MAX. 49.0 ± 2.5 12 MIN. 8 DY8 DY3 3 DY2 5 DY7 DY4 4 6 7 9 DY9 2 8 10 P 1 2 1 9 11 ANODE K DY1 1 to 9: DYNODES 3 4 DIRECTION OF LIGHT BULB SHIELD GRILL PHOTOCATHODE DIRECTION OF LIGHT Detail of Tube (Cross Section of Top View) 32.2 ± 0.5 11 PIN BASE JEDEC No. B11-88 TPMSA0012EC TPMSC0040EA Figure 7: Optional Accessories (Unit: mm) (a) E678-11A (Socket) (a) E717-63 (Socket Assembly) 49 PMT 38 3.5 33.0 ± 0.3 SOCKET PIN No. 10 P DY9 9 DY8 8 DY7 7 3.5 33 5 5 38.0 ± 0.3 49.0 ± 0.3 R10 C3 R9 C2 R8 C1 SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) POWER SUPPLY GND AWG22 (BLACK) R7 29 DY6 6 DY5 5 DY4 4 DY3 3 HOUSING (INSULATOR) DY2 2 POTTING COMPOUND DY1 K 1 4 4 29 R6 R to R10 : 330 kΩ C1 to C3 : 0.01 µF 18 R5 TACCA0064EA 450 ± 10 30 +0 -1 R4 31.0 ± 0.5 R3 R2 R1 11 -HV AWG22 (VIOLET) TACCA0002EG Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. HAMAMATSU PHOTONICS K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] TPMS1082E01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected] JUN. 2013 IP China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, 27 Dongsanhuan Road North, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected]