Schottky Barrier Diodes (SBD) MAS3795 Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 Symbol Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V Forward current (DC) IF 30 mA Peak forward current IFM 150 mA 0.15 max. 0 to 0.01 0.52±0.03 5° ■ Absolute Maximum Ratings Ta = 25°C Parameter 5° 1 0.23+0.05 –0.02 0.15 min. • High-density mounting is possible • Optimum for high frequency rectification because of its short reverse recovery time (trr) • Low forward voltage VF optimum for low voltage rectification VF = < 0.3 V (at IF = 1 mA) • SSS-Mini type 3-pin package 0.15 min. 0.80±0.05 ■ Features 1.20±0.05 3 1: Anode 2: N.C. 3: Cathode SSSMini3-F1 Package Marking Symbol: M2 Junction temperature Tj 125 °C Internal Connection Storage temperature Tstg −55 to +125 °C 3 1 2 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 30 V 30 µA Forward voltage (DC) VF1 IF = 1 mA 0.3 V VF2 IF = 30 mA Ct VR = 1 V, f = 1 MHz 1.5 pF trr IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1.0 ns η Vin = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % Terminal capacitance Reverse recovery time * Detection efficiency 1.0 Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 GHz 3. *: trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: June 2002 Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 SKH00117AED Output Pulse t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω 1 MAS3795 IF VF IR V R VF Ta 104 103 1.0 Ta = 125°C 75°C 25°C –20°C 10 1 0.8 75°C 102 25°C 10 10−1 1 10−2 10−1 Forward voltage VF (V) Ta = 125°C 103 Reverse current IR (µA) Forward current IF (mA) 102 IF = 30 mA 0.6 10 mA 0.4 0.2 1 mA 0 0.4 0.8 1.2 1.6 2.0 2.4 0 5 IR T a 25 30 3V 1V 102 10 1 2.5 2.0 1.5 1.0 0.5 0 0 40 80 120 160 Ambient temperature Ta (°C) 200 0 5 10 15 20 25 Reverse voltage VR (V) SKH00117AED 0 40 80 120 160 Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C Terminal capacitance Ct (pF) 103 Reverse current IR (µA) 20 3.0 VR = 25 V 2 15 Ct VR 104 10−1 −40 10 Reverse voltage VR (V) Forward voltage VF (V) 0 −40 30 200 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 MAY