PESD5V0R1BSF Ultra low capacitance bidirectional ESD protection diode 7 May 2015 Product data sheet 1. General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS Protection family. This device is housed in a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package. The TrEOS Protection family is optimized for safeguarding very sensitive high-speed interfaces against ESD pulses with a high level of robustness. 2. Features and benefits • • • • Bidirectional ESD protection of one line Extremely low diode capacitance Cd = 0.1 pF ESD protection up to ±10 kV according to IEC 61000-4-2 Ultra small SMD package 3. Applications ESD and surge protection for: • • • ultra high-speed datalines very sensitive interface lines generic interface lines in portable electronics, communication, consumer and computing devices. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 0.1 0.15 pF VRWM reverse standoff voltage Tamb = 25 °C - - 5 V Scan or click this QR code to view the latest information for this product PESD5V0R1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 K cathode Simplified outline 1 2 Graphic symbol 1 2 sym045 Transparent top view DSN0603-2 (SOD962-2) 6. Ordering information Table 3. Ordering information Type number PESD5V0R1BSF Package Name Description Version DSN0603-2 Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962-2 7. Marking Table 4. Marking codes Type number Marking code PESD5V0R1BSF B PESD5V0R1BSF Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 12 PESD5V0R1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit IPPM rated peak pulse current tp = 8/20 µs - 4.5 A Tj junction temperature - 150 °C Tamb ambient temperature -40 125 °C Tstg storage temperature -65 150 °C [1] ESD maximum ratings VESD electrostatic discharge voltage [1] [2] IEC 61000-4-2; contact discharge [2] - 10 kV IEC 61000-4-2; air discharge [2] - 15 kV According to IEC 61000-4-5 and IEC 61643-321. Device stressed with ten non-repetitive ESD pulses. 001aaa631 001aaa630 120 IPP 100 % 100 % IPP; 8 µs IPP (%) 80 90 % e- t 50 % IPP; 20 µs 40 10 % 0 Fig. 1. 0 10 20 30 t (µs) 8/20 µs pulse waveform according to IEC 61000-4-5 and IEC 61643-321 PESD5V0R1BSF Product data sheet tr = 0.6 ns to 1 ns 40 t 30 ns 60 ns Fig. 2. ESD pulse waveform according to IEC 61000-4-2 All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 12 PESD5V0R1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage Tamb = 25 °C - - 5 V Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 0.1 0.15 pF f = 2.5 GHz; VR = 0 V; Tamb = 25 °C - 0.1 - pF 6 10 - V VBR breakdown voltage IR = 1 mA; Tamb = 25 °C VCL clamping voltage Tamb = 25 °C; IPPM = 4.5 A; tp = 8/20 µs [1] - - 5 V Tamb = 25 °C; IPP = 8 A; tp = TLP [2] - 6 - V Tamb = 25 °C; IPP = 15 A; tp = TLP [2] - 9.2 - V [2] - 0.45 - Ω - 1 50 nA Rdyn dynamic resistance Tamb = 25 °C; IR = 10 A IRM reverse leakage current VRWM = 5 V; Tamb = 25 °C [1] [2] According to IEC 61000-4-5 and IEC 61643-321. Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.5.1-2008. IPPM IPP aaa-017367 0.20 Cd (pF) 0.15 -VCL -VBR -VRWM IR IRM 0.10 -IRM -IR VRWM VBR VCL 0.05 - + 0.00 -IPP -IPPM Fig. 3. V-I characteristics for a bidirectional ESD protection diode PESD5V0R1BSF Product data sheet -5 -3 -1 1 006aab325 3 VR (V) 5 f = 1 MHz; Tamb = 25 °C Fig. 4. Diode capacitance as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 12 PESD5V0R1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode aaa-017368 0.20 aaa-017793 2 Cd (pF) S21 (dB) 0.15 -2 0.10 -6 0.05 0.00 Fig. 5. 0 2 4 6 f (GHz) -10 10-2 8 Diode capacitance as a function of frequency; typical values Fig. 6. 1 10 102 aaa-017795 0 IPP (A) f (GHz) Insertion loss; typical values aaa-017794 16 10-1 IPP (A) 12 -4 Rdyn = 0.45 Ω 8 -8 4 -12 0 0 5 10 15 VCL (V) -16 -20 20 tp = 100 ns; Transmission Line Pulse (TLP) Fig. 7. Dynamic resistance with positive clamping voltage PESD5V0R1BSF Product data sheet Rdyn = 0.45 Ω -15 -10 -5 VCL (V) 0 tp = 100 ns; Transmission Line Pulse (TLP) Fig. 8. Dynamic resistance with negative clamping voltage All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 12 PESD5V0R1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode ESD TESTER 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax Rd 40 dB ATTENUATOR Cs 50 Ω DUT (DEVICE UNDER TEST) IEC 61000-4-2 ed.2 Cs = 150 pF; Rd = 330 Ω 10 2 V (kV) 8 V (kV) 0 6 -2 4 -4 2 -6 0 -8 -2 -10 0 10 20 30 40 50 t (ns) 60 -10 -10 70 unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) 0 10 20 30 40 50 t (ns) 60 70 unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) aaa-003952 Fig. 9. ESD clamping test setup and waveforms aaa-017796 140 VCL (V) VCL (V) 100 -20 60 -60 VCL at 30 ns = 8.3 V 20 -20 -10 aaa-017797 20 0 10 20 30 40 50 -100 60 t (ns) -140 -10 70 Fig. 10. Clamped +8 kV pulse waveform (IEC 61000-4-2 network) PESD5V0R1BSF Product data sheet VCL at 30 ns = -8.3 V 0 10 20 30 40 50 60 t (ns) 70 Fig. 11. Clamped -8 kV pulse waveform (IEC 61000-4-2 network) All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 12 PESD5V0R1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 10. Application information The device is designed for the protection of one bidirectional data line from surge pulses and ESD damage. The device is suitable on lines where the signal polarities are both positive and negative with respect to ground. The device is not designed to be used on lines connected to a DC supply. line to be protected ESD protection diode GND aaa-002737 Fig. 12. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. 2. 3. 4. 5. Place the device as close to the input terminal or connector as possible. Minimize the path length between the device and the protected line. Keep parallel signal paths to a minimum. Avoid running protected conductors in parallel with unprotected conductors. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Use ground planes whenever possible. For multilayer PCBs, use ground vias. 11. Package outline 0.325 0.275 0.32 0.28 1 0.03 max 0.15 0.13 0.4 0.625 0.575 2 Dimensions in mm 0.25 0.23 14-12-03 Fig. 13. Package outline DSN0603-2 (SOD962-2) PESD5V0R1BSF Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 12 PESD5V0R1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 12. Soldering Footprint information for reflow soldering of leadless ultra small package; 2 terminals SOD962-2 0.85 0.4 0.4 R0.025 (8×) 0.24 (2×) 0.14 (2×) 0.2 (2×) solder land solder land plus solder paste solder paste deposit solder resist Dimensions in mm sod962-2_fr Fig. 14. Reflow soldering footprint for DSN0603-2 (SOD962-2) PESD5V0R1BSF Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 12 PESD5V0R1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 13. Revision history Table 7. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PESD5V0R1BSF v.2 20150507 Product data sheet - PESD5V0R1BSF v.1 Modifications: • PESD5V0R1BSF v.1 20150429 - - PESD5V0R1BSF Product data sheet Product status changed Preliminary data sheet All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 12 PESD5V0R1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 14. Legal information 14.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 14.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. PESD5V0R1BSF Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 12 PESD5V0R1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PESD5V0R1BSF Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 12 PESD5V0R1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 15. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Characteristics ....................................................... 4 10 Application information .........................................7 11 Package outline ..................................................... 7 12 Soldering ................................................................ 8 13 Revision history ..................................................... 9 14 14.1 14.2 14.3 14.4 Legal information .................................................10 Data sheet status ............................................... 10 Definitions ...........................................................10 Disclaimers .........................................................10 Trademarks ........................................................ 11 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 7 May 2015 PESD5V0R1BSF Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 12