SO T8 83 B PESD5V0V2BMB Very low capacitance bidirectional ESD protection diodes 17 August 2015 Product data sheet 1. General description Two bidirectional ElectroStatic Discharge (ESD) protection diodes designed to protect two signal lines from damage caused by ESD and other transients. The device is housed in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • • Bidirectional ESD protection of two lines Ultra small SMD plastic package ESD protection up to 30 kV; IEC 61000-4-2 IPPM = 9 A; IEC 61000-4-5 (surge) Ultra low leakage current: IRM = 1 nA AEC-Q101 qualified 3. Applications • • • • • Computers and peripherals Audio and video equipment Cellular handsets and accessories Communication systems Portable electronics 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage Tamb = 25 °C - - 5 V Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 18 20 pF Scan or click this QR code to view the latest information for this product PESD5V0V2BMB NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K1 cathode 2 K2 cathode 3 K3 common cathode Simplified outline Graphic symbol 1 1 3 3 2 2 Transparent top view 006aab331 DFN1006B-3 (SOT883B) 6. Ordering information Table 3. Ordering information Type number PESD5V0V2BMB Package Name Description Version DFN1006B-3 DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm SOT883B 7. Marking Table 4. Marking codes Type number Marking code PESD5V0V2BMB 00 11 01 00 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PESD5V0V2BMB Product data sheet All information provided in this document is subject to legal disclaimers. 17 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 12 PESD5V0V2BMB NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit IPPM rated peak pulse current tp = 8/20 μs - 9 A Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1][2] ESD maximum ratings VESD electrostatic discharge voltage [1] [2] [3] IEC 61000-4-2; contact discharge [1][3] - 30 kV IEC 61000-4-2; air discharge [1][3] - 30 kV MIL-STD-883; human body model [1] - 10 kV Measured from pin 1 or 2 to pin 3. According to IEC 61000-4-5 and IEC 61643-321. Device stressed with ten non-repetitive ESD pulses. 001aaa631 001aaa630 120 IPP 100 % 100 % IPP; 8 µs IPP (%) 80 90 % e- t 50 % IPP; 20 µs 40 10 % 0 Fig. 2. 0 10 20 30 t (µs) t tr = 0.6 ns to 1 ns 40 30 ns 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 and IEC 61643-321 Fig. 3. ESD pulse waveform according to IEC 61000-4-2 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage Tamb = 25 °C - - 5 V IRM reverse leakage current VRWM = 5 V; Tamb = 25 °C - 1 10 nA PESD5V0V2BMB Product data sheet All information provided in this document is subject to legal disclaimers. 17 August 2015 [1] © NXP Semiconductors N.V. 2015. All rights reserved 3 / 12 PESD5V0V2BMB NXP Semiconductors Very low capacitance bidirectional ESD protection diodes Symbol Parameter Conditions VBR breakdown voltage IR = 5 mA; Tamb = 25 °C Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C VCL clamping voltage IPP = 1 A; Tamb = 25 °C; tp = 8/20 μs Rdyn dynamic resistance [1] [2] [3] Min Typ Max Unit 5.5 6.8 7.8 V - 18 20 pF [1][2] - 8 9.5 V IPPM = 9 A; Tamb = 25 °C; tp = 8/20 μs [1][2] - 11 12.5 V IR = 10 A; Tamb = 25 °C [1][3] - 0.15 - Ω [1] Measured from pin 1 or 2 to pin 3. According to IEC 61000-4-5 and IEC 61643-321. Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.5.1-2008. aaa-019002 20 IPP Cd (pF) 16 12 IR IRM - VCL - VBR - VRWM 8 - IRM - IR VRWM VBR VCL - 4 0 -5 -3 -1 1 3 VR (V) - IPP 5 006aaa676 Fig. 5. f = 1 MHz; Tamb = 25 °C Fig. 4. V-I characteristics for a bidirectional ESD protection diode Diode capacitance as a function of reverse voltage; typical values aaa-019004 30 I (A) aaa-019006 0 I (A) 20 -10 10 -20 Rdyn: 0.15 Ω 0 0 4 Rdyn: 0.15 Ω 8 VCL (V) -30 -12 12 tp = 100 ns; Transmission Line Pulse (TLP) Fig. 6. + Dynamic resistance PESD5V0V2BMB Product data sheet -8 -4 VCL (V) 0 tp = 100 ns; Transmission Line Pulse (TLP) Fig. 7. Dynamic resistance All information provided in this document is subject to legal disclaimers. 17 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 12 PESD5V0V2BMB NXP Semiconductors Very low capacitance bidirectional ESD protection diodes ESD TESTER 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax Rd 40 dB ATTENUATOR Cs 50 Ω DUT (DEVICE UNDER TEST) IEC 61000-4-2 ed.2 Cs = 150 pF; Rd = 330 Ω 10 2 V (kV) 8 V (kV) 0 6 -2 4 -4 2 -6 0 -8 -2 -10 0 10 20 30 40 50 t (ns) 60 70 -10 -10 unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) 0 10 20 30 40 50 t (ns) 60 70 unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) aaa-003952 Fig. 8. ESD clamping test setup and waveforms aaa-019009 70 VCL (V) VCL (V) 50 20 30 0 VCL at 30 ns = 8.5 V 10 -20 -10 -40 -30 -10 Fig. 9. aaa-019010 40 10 30 50 t (ns) -60 -10 70 Clamped +8 kV pulse waveform (IEC 61000-4-2 network) PESD5V0V2BMB Product data sheet VCL at 30 ns = - 8.5 V 10 30 50 t (ns) 70 Fig. 10. Clamped -8 kV pulse waveform (IEC 61000-4-2 network) All information provided in this document is subject to legal disclaimers. 17 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 12 PESD5V0V2BMB NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 10. Application information The device is designed for the protection of up to two bidirectional data lines from surge pulses and ESD damage. Fig. 11. Application diagram signal lines DUT GND 006aab332 Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. 2. 3. 4. 5. Place the device as close to the input terminal or connector as possible. Minimize the path length between the device and the protected line. Keep parallel signal paths to a minimum. Avoid running protected conductors in parallel with unprotected conductors. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Use ground planes whenever possible. For multilayer PCBs, use ground vias. 11. Test information 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PESD5V0V2BMB Product data sheet All information provided in this document is subject to legal disclaimers. 17 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 12 PESD5V0V2BMB NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 12. Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm L (2x) SOT883B L1 2 b (2x) 3 e b1 1 e1 A1 A E D 0 0.5 Dimensions Unit mm 1 mm scale A(1) A1 b b1 D E e e1 L L1 max 0.40 0.04 0.20 0.55 0.65 1.05 0.30 0.30 nom 0.37 0.15 0.50 0.60 1.00 0.35 0.65 0.25 0.25 min 0.34 0.12 0.47 0.55 0.95 0.22 0.22 Note 1. Including plating thickness Outline version sot883b_po References IEC JEDEC JEITA European projection Issue date 11-11-02 12-01-03 SOT883B Fig. 12. Package outline DFN1006B-3 (SOT883B) PESD5V0V2BMB Product data sheet All information provided in this document is subject to legal disclaimers. 17 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 12 PESD5V0V2BMB NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 13. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.4 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Fig. 13. Reflow soldering footprint for DFN1006B-3 (SOT883B) PESD5V0V2BMB Product data sheet All information provided in this document is subject to legal disclaimers. 17 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 12 PESD5V0V2BMB NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 14. Revision history Table 7. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PESD5V0V2BMB v.1 20150817 Product data sheet - - PESD5V0V2BMB Product data sheet All information provided in this document is subject to legal disclaimers. 17 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 12 PESD5V0V2BMB NXP Semiconductors Very low capacitance bidirectional ESD protection diodes In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". 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In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 15.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. PESD5V0V2BMB Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 17 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 12 PESD5V0V2BMB NXP Semiconductors Very low capacitance bidirectional ESD protection diodes No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Characteristics ....................................................... 3 10 Application information .........................................6 11 11.1 Test information ..................................................... 6 Quality information ............................................... 6 12 Package outline ..................................................... 7 13 Soldering ................................................................ 8 14 Revision history ..................................................... 9 15 15.1 15.2 15.3 15.4 Legal information .................................................10 Data sheet status ............................................... 10 Definitions ...........................................................10 Disclaimers .........................................................10 Trademarks ........................................................ 11 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 17 August 2015 PESD5V0V2BMB Product data sheet All information provided in this document is subject to legal disclaimers. 17 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 12