PTVS12VZ1USKN Transient voltage suppressor in DSN1608-2 for mobile applications 20 November 2015 Product data sheet 1. General description Unidirectional Transient Voltage Suppressor (TVS) in an ultra small leadless DSN1608-2 (SOD963) package, designed for transient overvoltage protection. 2. Features and benefits • • • • • Rated peak pulse current: IPPM = 65 A (8/20 µs pulse) Rated peak pulse power: PPPM = 2100 W (8/20 µs pulse) Dynamic resistance Rdyn = 0.1 Ω Reverse current: IRM = 1 nA Very low package height: 0.25 mm 3. Applications • • • Power supply protection Industrial application Power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IPPM peak pulse current tp = 8/20 µs tp = 10/1000 μs VRWM reverse standoff voltage [1] [2] [3] Tamb = 25 °C Min Typ Max Unit [1][2] - - 65 A [3][2] - - 10.1 A - - 12 V In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 µs current waveform). Measured from pin 1 to pin 2. In accordance with IEC 61643-321 (10/1000 µs current waveform). Scan or click this QR code to view the latest information for this product PTVS12VZ1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K 2 A Simplified outline Graphic symbol cathode 1 1 anode 2 2 sym035 Transparent top view DSN1608-2 (SOD963) 6. Ordering information Table 3. Ordering information Type number PTVS12VZ1USKN Package Name Description Version DSN1608-2 leadless ultra small package; 2 terminals; body 1.6 x 0.8 SOD963 x 0.25 mm 7. Marking Table 4. Marking codes Type number Marking code PTVS12VZ1USKN Z5 PTVS12VZ1USKN Product data sheet All information provided in this document is subject to legal disclaimers. 20 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 13 PTVS12VZ1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions PPPM peak pulse power tp = 8/20 µs IPPM peak pulse current Min Max Unit [1][2] - 2100 W tp = 10/1000 μs [3][2] - 180 W tp = 8/20 µs [1][2] - 65 A tp = 10/1000 μs [3][2] - 10.1 A Tj junction temperature - 150 °C Tamb ambient temperature -40 125 °C Tstg storage temperature -65 150 °C ESD maximum ratings VESD electrostatic discharge voltage [1] [2] [3] [4] IEC 61000-4-2; contact discharge [4][2] - 30 kV IEC 61000-4-2; air discharge [4][2] - 30 kV In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 µs current waveform). Measured from pin 1 to pin 2. In accordance with IEC 61643-321 (10/1000 µs current waveform). Device stressed with ten non-repetitive ESD pulses. 001aaa631 001aaa630 120 IPP 100 % 100 % IPP; 8 µs IPP (%) 80 90 % e-t 50 % IPP; 20 µs 40 10 % 0 Fig. 1. 0 10 20 30 tp (ms) 8/20 µs pulse waveform according to IEC 61000-4-5 and IEC 61643-321 PTVS12VZ1USKN Product data sheet tr = 0.6 ns to 1 ns 40 t 30 ns 60 ns Fig. 2. ESD pulse waveform according to IEC 61000-4-2 All information provided in this document is subject to legal disclaimers. 20 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 13 PTVS12VZ1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications 006aab319 150 IPP (%) 100 % IPP; 10 µs 100 50 % IPP; 1000 µs 50 0 Fig. 3. 0 1.0 2.0 3.0 tp (ms) 4.0 10/1000 µs pulse waveform according to IEC 61643-321 PTVS12VZ1USKN Product data sheet All information provided in this document is subject to legal disclaimers. 20 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 13 PTVS12VZ1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage Tamb = 25 °C - - 12 V IRM reverse leakage current VRWM = 12 V; Tamb = 25 °C - 1 200 nA Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 430 - pF VBR breakdown voltage IR = 10 mA; Tamb = 25 °C [1] 13.3 14.4 15.4 V VCL clamping voltage IPPM = 65 A; Tamb = 25 °C; tp = 8/20 µs [2][1] - 25.9 32 V IPPM = 10.1 A; Tamb = 25 °C; [3][1] - 16.6 19.9 V [4][1] - 0.1 - Ω [1] tp = 10/1000 μs Rdyn dynamic resistance [1] [2] [3] [4] IR = 10 A; Tamb = 25 °C Measured from pin 1 to 2. In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 µs current waveform). In accordance with IEC 61643-321 (10/1000 µs current waveform). Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.5.1-2008. I aaa-020135 104 PPPM (W) 103 - VCL - VBR - VRWM - V - IRM - IR 102 + P-N 10 - IPP - IPPM Fig. 4. 006aab324 V-I characteristics for a unidirectional TVS protection diode PTVS12VZ1USKN Product data sheet Fig. 5. 10 103 tp (µs) 104 Rated peak pulse power as a funtion of square pulse duration; typical values All information provided in this document is subject to legal disclaimers. 20 November 2015 102 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 13 PTVS12VZ1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications 006aab321 1.2 aaa-020136 102 IRM (nA) PPPM PPPM(25°C) 10 0.8 1 0.4 10-1 0 Fig. 6. 0 50 100 150 Tj (°C) 10-2 -100 200 Relative variation of rated peak pulse power as a function of junction temperature; typical values Fig. 7. -5 15 -10 10 -15 -20 Rdyn = 0.1 Ω -25 0 0 5 10 15 VCL (V) -30 20 tp = 100 ns; Transmission Line Pulse (TLP) Fig. 8. 200 Rdyn = 0.08 Ω 0 20 -5 Tamb (°C) aaa-020140 5 IPP (A) 5 100 Relative variation of reverse leakage current as a function of junction temperature; typical values aaa-020139 30 IPP (A) 25 0 Product data sheet -2 -1 VCL (V) 0 tp = 100 ns; Transmission Line Pulse (TLP) Dynamic resistance with positive clamping voltage; typical values PTVS12VZ1USKN -3 Fig. 9. Dynamic resistance with negative clamping voltage; typical values All information provided in this document is subject to legal disclaimers. 20 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 13 PTVS12VZ1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications aaa-020137 35 VCL (V) 30 25 25 20 20 15 15 10 10 5 5 0 0 20 40 60 80 aaa-020138 35 VCL (V) 30 0 100 IPP (A) 0 40 80 120 160 200 IPP (A) tp = 8/20 μs; according to IEC 61000-4-5 and tp = 8/20 μs; according to IEC 61000-4-5 and IEC 61643-321 IEC 61643-321 Fig. 10. Dynamic resistance with positive clamping voltage; typical values Fig. 11. Dynamic resistance with negative clamping voltage; typical values ESD TESTER 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax Rd 40 dB ATTENUATOR Cs 50 Ω DUT (DEVICE UNDER TEST) IEC 61000-4-2 ed.2 Cs = 150 pF; Rd = 330 Ω 10 2 V (kV) 8 V (kV) 0 6 -2 4 -4 2 -6 0 -8 -2 -10 0 10 20 30 40 50 t (ns) 60 70 -10 -10 unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) 0 10 20 30 40 50 t (ns) 60 70 unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) aaa-003952 Fig. 12. ESD clamping test setup and waveforms PTVS12VZ1USKN Product data sheet All information provided in this document is subject to legal disclaimers. 20 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 13 PTVS12VZ1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications aaa-020141 35 aaa-020142 20 VCL (V) VCL (V) 25 10 15 0 VCL at 30 ns = 15 V VCL at 30 ns = -1.6 V 5 -5 -10 -10 0 10 20 30 40 50 60 t (ns) -20 -10 70 Fig. 13. Clamped +8 kV pulse waveform (IEC 61000-4-2 network) 0 10 20 30 40 50 60 t (ns) 70 Fig. 14. Clamped -8 kV pulse waveform (IEC 61000-4-2 network) 10. Application information line to be protected (positive signal polarity) line to be protected (negative signal polarity) TVS diode TVS diode GND GND unidirectional protection of one line aaa-019403 Fig. 15. Application diagram PTVS12VZ1USKN Product data sheet All information provided in this document is subject to legal disclaimers. 20 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 13 PTVS12VZ1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications 11. Package outline 0.8 0.25 1 1.6 2 Dimensions in mm 15-08-06 Fig. 16. Package outline DSN1608-2 (SOD963) 12. Soldering SOD963 2 1.8 0.26 0.93 0.3 0.875 0.7 1 (Cu) 1.2 occupied area solder resist Cu pad solder paste Dimensions in mm 15-06-09 15-06-10 sod963_fr Fig. 17. Reflow soldering footprint for DSN1608-2 (SOD963) PTVS12VZ1USKN Product data sheet All information provided in this document is subject to legal disclaimers. 20 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 13 PTVS12VZ1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications 13. Revision history Table 7. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PTVS12VZ1USKN v.1 20151022 Preliminary data sheet - - Modifications: • PTVS12VZ1USKN v.2 20151120 - PTVS12VZ1USKN v.1 PTVS12VZ1USKN Product data sheet Product status changed Product data sheet All information provided in this document is subject to legal disclaimers. 20 November 2015 © NXP Semiconductors N.V. 2015. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Characteristics ....................................................... 5 10 Application information .........................................8 11 Package outline ..................................................... 9 12 Soldering ................................................................ 9 13 Revision history ................................................... 10 14 14.1 14.2 14.3 14.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 November 2015 PTVS12VZ1USKN Product data sheet All information provided in this document is subject to legal disclaimers. 20 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 13