VSSB310-E3 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Low profile package TMBS® • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DO-214AA (SMB) TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 100 V MECHANICAL DATA IFSM 80 A EAS 50 mJ Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade VF at IF = 3.0 A 0.56 V TJ max. 150 °C Package DO-214AA (SMB) Diode variations Single die Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL UNIT V3B Device marking code Maximum repetitive peak reverse voltage VSSB310 VRRM 100 V (1) 3.0 IF (2) 1.9 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 80 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH EAS 50 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 1.0 A Operating junction and storage temperature range TJ, TSTG -40 to +150 °C Maximum DC forward current IF A Notes (1) Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB (2) Free air, mounted on recommended copper pad area Revision: 05-Nov-13 Document Number: 89139 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSSB310-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) TEST CONDITIONS PARAMETER IR = 1.0 mA Breakdown voltage MAX. UNIT VBR 100 (minimum) - V 0.62 0.70 0.56 0.65 TA = 25 °C 1.5 - μA TA = 125 °C 1.2 - mA 7.0 250 μA 3.6 20 mA 230 - pF TA = 25 °C VF (1) TA = 125 °C VR = 70 V Reverse current IR (2) TA = 25 °C VR = 100 V Typical junction capacitance TYP. TA = 25 °C IF = 3.0 A Instantaneous forward voltage SYMBOL TA = 125 °C CJ 4.0 V, 1 MHz V Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL VSSB310 RJA (1) 120 RJM (2) 15 UNIT °C/W Notes (1) Free air, mounted on recommended PCB 1 oz. pad area. Thermal resistance R JA - junction to ambient (2) Units mounted on PCB with 10 mm x 10 mm copper pad areas. R JM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSSB310-E3/52T 0.096 52T 750 7" diameter plastic tape and reel VSSB310-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise curves) 2.4 D = 0.5 2.2 3.5 3.0 2.5 2.0 1.5 1.0 D = 0.8 D = 0.3 2.0 Average Power Loss (W) Average Forward Rectified Current (A) 4.0 D = 0.2 1.8 1.6 1.4 D = 1.0 D = 0.1 1.2 1.0 T 0.8 0.6 0.4 0.5 D = tp/T 0.2 TM Measured at Terminal tp 0 0 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 05-Nov-13 Document Number: 89139 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSSB310-E3 www.vishay.com Vishay General Semiconductor 1000 10 TA = 100 °C TA = 125 °C 1 100 TA = 25 °C 0.1 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.6 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 1000 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 150 °C TA = 125 °C 1 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 20 30 40 50 60 70 80 90 100 10 1 0.01 0.0001 10 Junction to Ambient 100 0.1 1 10 100 t - Pulse Duration (s) Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.096 (2.44) 0.084 (2.13) 0.220 REF. 0.008 (0.2) 0 (0) 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) Revision: 05-Nov-13 Document Number: 89139 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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