TA22 www.vishay.com Vishay Sfernice Single Value Wirebondable Thin Film Chip Resistors FEATURES • Small size 20 mil square • Resistance range 10 Ω to 1 MΩ • Resistor material: self-passivating Tantalum Nitride • Silicon substrate for good power dissipation • Wirebondable Actual Size • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Thin film resistors are often an excellent solution for analog design problems where space is limited and high packing density is required. Due to their Tantalum Nitride resistive layer these resistors are stable 0.07 % (2000 h, rated power at +70 °C) and moisture resistant. SCHEMATIC AND PATTERN R STANDARD ELECTRICAL SPECIFICATIONS MODEL SIZE RESISTANCE RANGE Ω RATED POWER P70 °C W LIMITING ELEMENT VOLTAGE V TOLERANCE ±% TEMPERATURE COEFFICIENT ± ppm/°C TA22 0202 10 to 1M 0.05 100 0.5, 1.0, 2.0 50 (1), 100 Note (1) On request CLIMATIC SPECIFICATIONS MECHANICAL SPECIFICATIONS Operating temperature range -55 °C to +155 °C Resistive element Storage temperature range -55 °C to +155 °C Passivation Tantalum Nitride Tantalum Pentoxide (Autopassivation) Substrate material Standard Silicon Bonding pads Aluminum DIMENSIONS in millimeters (inches) 0.58 ± 0.05 (23 ± 2) 0.43 (17.2) 0.58 ± 0.05 0.43 (23 ± 2) (17.2) 0.58 ± 0.05 (23 ± 2) 0.47 (18.8) 0.58 ± 0.05 0.47 (23 ± 2) (18.8) Type A (Current) Type B (New) 0.125 min. (5 min.) 0.08 min. (3.2 min.) 0.08 min. (3.2 min.) 0.10 min. (4 min.) Note • Customer can get one or the other part, but positions of pads are similar. Revision: 11-Nov-15 Document Number: 60062 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TA22 www.vishay.com Vishay Sfernice DIMENSIONS in millimeters (inches) 0.4 max. (15.75 max.) TECHNICAL SPECIFICATIONS TEST SPECIFICATIONS MATERIAL CONDITIONS TANTALUM NITRIDE Power dissipation 100 mW at 25 °C, 50 mW at +70 °C, 25 mW at +125 °C Stability ± 0.07 % typical, ± 0.1 maximum Voltage coefficient 2000 h at +70 °C at Pn < 0.1 ppm/V Noise < -35 dB typical Thermal EMF MIL-STD-202 method 308 < 0.01 μV/°C Shelf life stability 100 ppm 1 year at +25 °C Rated Power in % DERATING 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Ambient Temperature in °C GLOBAL PART NUMBER INFORMATION New Global Part Numbering: TA22-100KD0016 (preferred part number format) T A GLOBAL MODEL 2 2 - 1 0 0 K D 0 0 1 6 VALUE TOLERANCE OPTION Decimal R, K or M D = ± 0.5 % F = ± 1.0 % G = ± 2.0 % Leave blank if no option Historical Part Number example: TA22 10K 0.5 % R0016 (will continue to be accepted) TA22 10K 0.5 % R0016 HISTORICAL MODEL VALUE TOLERANCE OPTION Revision: 11-Nov-15 Document Number: 60062 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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