NX5P2190 Logic controlled high-side power switch Rev. 1.1 — 15 January 2015 Product data sheet 1. General description The NX5P2190 is an advanced power switch with adjustable current limit. It includes under-voltage and over-voltage lockout, over-current, over-temperature, reverse bias and in-rush current protection circuits. These circuits are designed to isolate a voltage source from a VBUS interface pin automatically when a fault occurs. The device features two power switch terminals, one input (VINT) and one output (VBUS). A current limit input (ILIM) defines the over-current and in-rush current limit, and a voltage detect output (VDET) monitors the voltage level on VBUS. An open-drain fault output (FAULT) indicates when a fault condition occurs. An enable input (EN) controls the state of the switch. When EN is set LOW the device enters a low-power mode, disabling all protection circuits except the under-voltage lockout. The low-power mode can be entered at anytime unless the over temperature protection circuit has been triggered. Designed for operation from 3 V to 5.5 V, the NX5P2190 is a complete solution for power domain isolation and protection applications. The enable input includes integrated logic level translation making the device compatible with lower voltage processors and controllers. 2. Features and benefits Wide supply voltage range from 3 V to 5.5 V 30 V tolerant on VBUS ISW maximum 2 A continuous current Very low ON resistance: 100 m (maximum) at a supply voltage of 4.0 V Low-power mode (ground current 20 A typical) 1.8 V control logic Soft start turn-on slew rate Protection circuitry Over-temperature protection Over-current protection with low current output mode Reverse bias current/Back drive protection Over-voltage lockout Under-voltage lockout Analog voltage limited VBUS monitor path ESD protection: HBM JDS-001 Class 2 exceeds 2 kV IEC61000-4-2 contact discharge exceeds 8 kV for pins VBUS Specified from 40 C to +85 C NX5P2190 NXP Semiconductors Logic controlled high-side power switch 3. Applications USB OTG applications 4. Ordering information Table 1. Ordering information Type number Package Temperature range Name NX5P2190UK 40 C to +85 C Description Version WLCSP9 wafer level chip-scale package; 9 bumps; body 1.36 x 1.36 x 0.51 mm. (Backside coating included) NX5P2190UK 5. Marking Table 2. Marking codes Type number Marking code NX5P2190UK NX5PC 6. Functional diagram (1 9%86 9,17 9'(7 ,/,0 )$8/7 DDD Fig 1. Logic symbol NX5P2190 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 2 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch P$ &855(176285&( 5(9(56(&855(17 3527(&7,21 ,/,0 29(5&855(17 3527(&7,21 9%86 9,17 89/229/2 3527 9'(7 &21752/ (1 )$8/7 & 3527 DDD Fig 2. Logic diagram (simplified schematic) 7. Pinning information 7.1 Pinning 1;38. 1;38. EDOO$ LQGH[DUHD $ 9,17 9'(7 9%86 % 9,17 )$8/7 9%86 & (1 *1' ,/,0 $ % & 7UDQVSDUHQWWRSYLHZ DDD 7UDQVSDUHQWWRSYLHZ Fig 3. Pin configuration WLCSP9 package NX5P2190 Product data sheet DDD Fig 4. Ball mapping for WLCSP9 All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 3 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch 7.2 Pin description Table 3. Pin description Symbol Pin Description VINT A1, B1 internal circuitry voltage I VBUS A3, B3 external connector voltage O EN C1 enable input (active HIGH) I ILIM C3 current limiter I/O VDET A2 VBUS voltage level indicator O FAULT B2 fault condition indicator (open-drain; active LOW) GND C2 ground (0 V) 8. Functional description Table 4. Function table[1] EN VINT VBUS FAULT Operation mode X 0V Z L No supply X 0V < 30 V Z Disabled; switch open X < 3.2 V Z L Under-voltage lockout; switch open H > 5.5 V Z L Over-voltage lockout; switch open H 3.2 V to 5.5 V Z L Over-temperature; switch open L 3.2 V to 5.5 V Z Z Disabled; switch open H 3.2 V to 5.5 V VBUS = VINT Z Enabled; switch closed; active H 3.2 V to 5.5 V 0 V to VINT L Over-current; Switch open; constant current on VBUS H 3.2 V to 5.5 V 0 V to VINT L When ILIM is connected to GND, VBUS is default supplied with 10 mA current source H 3.2 V to 5.5 V VINT + 30 mV < VBUS < VINT + 0.45 V (> 4 ms) L Reverse bias current/back drive; switch open H 3.2 V to 5.5 V VBUS > VINT + 0.45 V L Reverse bias current/back drive; switch open [1] H = HIGH voltage level; L = LOW voltage level, Z = high-impedance OFF-state, X = Don’t care. Table 5. Function table VDET versus VBUS[1] VBUS VDET 3 V < VBUS < 30 V 1.5 < VDET < 5.5 V VDET detects VBUS voltage [1] Operation mode See Figure 22. NX5P2190 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 4 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch 8.1 EN input If EN is set LOW, the N-channel MOSFET is disabled, the FAULT output is set HIGH-impedance and the device enters low-power mode. In low-power mode, all protection circuits are disabled except the under-voltage lockout circuit. If EN is set HIGH, all protection circuits are reactivated. If no fault conditions exist and an RILIM current limit resistor is detected, the N-channel MOSFET is enabled. 8.2 Under-voltage lockout (UVLO) The UVLO circuit is active until VINT > 3.2 V. It disables the N-channel MOSFET, sets the FAULT output LOW and returns the device to low-power mode. The EN pin does not affect the UVLO circuit. Once VINT > 3.2 V, the EN pin controls the N-channel MOSFET state. The UVLO circuit remains active in low-power mode. 8.3 Over-voltage lockout (OVLO) If EN is set HIGH and VINT > 5.9 V, the OVLO circuit is active. It disables the N-channel MOSFET and sets the FAULT output LOW. In low-power mode, the OVLO circuit is disabled and does not change the FAULT output state. If the OVLO circuit is active, setting the EN pin LOW returns the device to low-power mode. 8.4 ILIM The over-current protection circuit's (OCP) trigger value Iocp, is set using an external resistor connected to the ILIM pin (see Figure 6). If EN is set HIGH and the ILIM pin is grounded, the device is in over-current. The N-channel MOSFET is disabled, the FAULT output is set LOW and VBUS supplied by the 10 mA current source. 8.5 Over-current protection (OCP) When the current through the N-channel MOSFET exceeds Iocp for 20 s or VBUS < VINT 200 mV, the device is in over-current. The OCP circuit disables the N-channel MOSFET within 2 s, sets the FAULT output LOW and supplies VBUS from the 10 mA current source. The OCP circuit is automatically reset when VINT > VBUS > VINT 200 mV for 20 s. The N-channel MOSFET assumes the state defined by EN, the 10 mA current source is disconnected and the FAULT output is set HIGH-impedance. If the OCP circuit is active, setting the EN pin LOW returns the device to low-power mode. 8.6 Over-temperature protection (OTP) If EN is set HIGH and the device temperature exceeds 125 °C, the device is in over temperature. The OTP circuit disables the N-channel MOSFET and sets the FAULT output LOW. Transitions on the EN pin have no effect. Once its temperature decreases to below 115 °C the device returns to the defined state. The OTP circuit is disabled in low-power mode. NX5P2190 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 5 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch 8.7 Reverse bias current/back drive protection (RCP) The reverse bias current protection circuit can only be triggered when EN is set HIGH. If VBUS > (VINT + 30 mV) for longer than 4 ms; or VBUS > (VINT + 0.45 V) the device is in reverse bias. The RCP circuit disables the N-channel MOSFET and sets the FAULT output LOW. Once VBUS < VINT for longer than 4 ms the device returns to the defined state. If the RCP circuit is active, setting the EN pin LOW returns the device to low-power mode. 8.8 FAULT output The FAULT output is an open-drain output that requires an external pull-up resistor. If any of the UVLO, OVLO, RCP, OCP or OTP circuits is activated, the FAULT output is set LOW to indicate that a fault has occurred. The FAULT output returns to the high impedance state automatically once the fault condition is removed. 8.9 VDET output VDET is an analog output that allows a controller to monitor the voltage level on VBUS. 8.10 In-rush current protection When the N-channel MOSFET is enabled, the in-rush current protection circuit clamps the switch current until VBUS = VINT 200 mV. The resistor connected to ILIM sets the clamp current. The in-rush current protection circuit is disabled in low-power mode. NX5P2190 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 6 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch 9. Application diagram The NX5P2190 typically connects a voltage source on VINT to the VBUS of a battery operated device. The external resistor RILIM sets the maximum current limit threshold. The FAULT output is open-drain. It requires an external pull-up resistor. P$ &855(176285&( 5(9(56(&855(17 3527(&7,21 29(5&855(17 3527(&7,21 9%86 ,/,0 9,17 89/229/2 3527 & Q) 5SX 9'(7 &21752/ (1 86%27*9%86 YROWDJHVRXUFH DQGFRQWURO )$8/7 & 3527 5,/,0 *1' DDD Fig 5. NX5P2190 Product data sheet NX5P2190 application diagram All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 7 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch 10. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter input voltage VI Conditions Min Max Unit VBUS [1] 0.5 +32 V VINT [1] 0.5 +6.5 V [2][3] 0.5 VINT + 0.5 V EN, ILIM VO output voltage FAULT 0.5 +6.0 V IIK input clamping current EN: VI < 0.5 V 50 - mA ISK switch clamping current VBUS; VINT; VI < 0.5 V 50 - mA ISW switch current Tamb = 85 °C - 2000 mA Tj(max) maximum junction temperature 40 +125 C Tstg storage temperature 65 +150 C Ptot total power dissipation - 400 mW [1] [4] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed. [2] The minimum input voltage rating may be exceeded if the input current rating is observed. [3] The maximum input voltage should not exceed +6.5 V. [4] The (absolute) maximum power dissipation depends on the junction temperature Tj. Higher power dissipation is allowed at lower ambient temperatures. The conditions to determine the specified values are Tamb = 85 C and the use of a two layer PCB. 11. Recommended operating conditions Table 7. Recommended operating conditions Symbol Parameter Conditions Min Max Unit VI input voltage VINT 3.0 5.5 V EN, ILIM 0 VINT V VBUS; EN = LOW 0 30 V 40 +85 C VO output voltage Tamb ambient temperature 12. Thermal characteristics Table 8. Symbol Rth(j-a) [1] Thermal characteristics Parameter Conditions thermal resistance from junction to ambient [1] Typ Unit 82 K/W Rth(j-a) is dependent upon board layout. To minimize Rth(j-a), ensure that all pins have a solid connection to larger copper layer areas. In multi-layer PCBs, the second layer should be used to create a large heat spreader area below the device. Avoid using solder-stop varnish under the device. NX5P2190 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 8 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch 13. Static characteristics Table 9. Static characteristics VI(VINT) = 4.0 V to 5.5 V; unless otherwise specified; Voltages are referenced to GND (ground = 0 V). Symbol Parameter Tamb = 25 C Conditions Tamb = 40 C to +85 C Unit Min Typ[1] Max Min Max VIH HIGH-level input voltage EN input 1.2 - - 1.2 - V VIL LOW-level input voltage EN input - - 0.4 - 0.4 V VO output voltage VDET; IVDET = 2 mA; 3 V < VBUS < 30 V 1.5 - 5.5 1.5 5.5 V VOL LOW-level output voltage FAULT, IO = 8 mA - - 0.5 - 0.5 V IO output current Current source - 10 - 8 15 mA EN = HIGH; FAULT = Hi-Z - - Iocp - Iocp mA 2000 - - mA Iocp overcurrent protection current EN = HIGH; see Figure 6 200 - Rpu pull-up resistance FAULT 20 - 200 - - k Vpu pull-up voltage FAULT - - VINT - VINT V RILIM current limit resistance ILIM 20 - 300 20 300 k IGND ground current VBUS open; EN = LOW; see Figure 7 and Figure 8 - 20 - - 40 A VBUS open; EN = HIGH; see Figure 7 and Figure 8 - 220 - - 360 A IOFF power-off leakage current VBUS = 0 V to 30 V; VINT = 0 V; see Figure 9 [2] - 2 - - 20 A IS(OFF) OFF-state leakage current VBUS = 0 V to 30 V; see Figure 10 and Figure 11 [2] - 2 - - 20 A VUVLO undervoltage lockout voltage 3.0 3.2 3.4 3.0 3.4 V VOVLO overvoltage lockout voltage 5.5 5.9 6.25 5.5 6.25 V - 150 - - - mV - 2 - - - pF - - 1 - 1 nF Vhys(OVLO) overvoltage lockout hysteresis voltage CI input capacitance CS(ON) ON-state capacitance EN [1] Typical values are measured at Tamb = 25 C and VI(VINT) = 5.0 V. [2] Typical value is measured at Tamb = 25 C and VI(VBUS) = 5.0 V. NX5P2190 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 9 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch 13.1 Graphs DDD ,RFS P$ DDD ,*1' $ 5,/,0Nȍ Tamb = 25 C. 7DPE& (1) Enabled (1) Minimum (2) Disabled (2) Typical (3) Maximum Fig 6. Typical overcurrent protection current versus the external resistor value Fig 7. DDD ,*1' $ Typical ground current versus temperature DDD ,2)) $ 9,(19 9,9%869 (1) Tamb = 85 C (2) Tamb = 25 C (3) Tamb = 40 C Fig 8. Typical ground current versus input voltage NX5P2190 Product data sheet Fig 9. Typical power-off leakage current versus input voltage on pin VBUS All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 10 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch DDD DDD ,62)) $ ,62)) $ 9,9%869 (1) Tamb = 85 C (1) VI(VBUS) = 5.0 V (2) Tamb = 25 C (2) VI(VBUS) = 10.0 V (3) Tamb = 40 C (3) VI(VBUS) = 15.0 V Fig 10. Typical OFF-state leakage current versus input voltage on pin VBUS 7DPE& Fig 11. Typical OFF-state leakage current versus temperature 13.2 ON resistance Table 10. ON resistance At recommended operating conditions; voltages are referenced to GND (ground = 0 V) Symbol Parameter RON Tamb = 25 C Conditions Tamb = 40 C to +85 C Unit Min Typ Max Min Max - 60 - - 100 ON resistance switch enabled; ILOAD = 200 mA; see Figure 12, Figure 13 and Figure 14 VI(VINT) = 4.0 V to 5.5 V m 13.3 ON resistance test circuit and waveforms 96: (1 9 9%86 9,17 *1' ,/2$' 9, DDD RON = VSW / ILOAD. Fig 12. Test circuit for measuring ON resistance NX5P2190 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 11 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch DDD 521 Pȍ 521 Pȍ DDD 7DPE& (1) VI(VINT) = 5.5 V (1) Tamb = 85 C (2) VI(VINT) = 4.0 V (2) Tamb = 25 C 9,179 (3) Tamb = 40 C Fig 13. Typical ON resistance versus temperature Fig 14. Typical ON resistance versus input voltage 14. Dynamic characteristics Table 11. Dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 16. VI(VINT) = 4.0 V to 5.5 V. Symbol Parameter Tamb = 25 C Conditions Tamb = 40 C to +85 C Min Typ Max Min Max Unit ten enable time EN to VBUS; see Figure 15 - 0.24 - 0.16 - ms tdis disable time EN to VBUS; see Figure 15 - 1.5 - - - ms ton turn-on time EN to VBUS; see Figure 15 - 0.63 - 0.52 - ms toff turn-off time EN to VBUS; see Figure 15 - 34.5 - - - ms tTLH LOW to HIGH VBUS; see Figure 15 output transition time - 0.39 - 0.16 - ms tTHL HIGH to LOW VBUS; see Figure 15 output transition time - 33 - - - ms NX5P2190 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 12 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch 14.1 Waveform and test circuits 9, (1LQSXW 90 *1' 92+ WRQ WRII WGLV WHQ 9; 9%86RXWSXW 9< *1' W7/+ W7+/ DDD Measurement points are given in Table 12. Logic level: VOH is the typical output voltage that occurs with the output load. Fig 15. Switching times Table 12. Measurement points Supply voltage EN Input Output VI(VINT) VM VX VY 4.0 V to 5.5 V 0.5 VI 0.9 VOH 0.1 VOH (1 9%86 * 9, 5/ 9,17 9(;7 &/ DDD Test data is given in Table 13. Definitions test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. VEXT = External voltage for measuring switching times. Fig 16. Test circuit for measuring switching times Table 13. Test data Supply voltage Input Load VEXT VI CL RL 4.0 V to 5.5 V 1.5 V 100 F 150 NX5P2190 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 13 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch DDD DDD (1 9%86 9 ,9,17 $ ,9,17 $ (1 9%86 9 WPV WPV EN = 1.5 V; VINT = 4 V; RL = 150 ; CL = 220 F; RILIM = 50 k; Tamb = 25 C. EN = 1.5 V; VINT = 5.5 V; RL = 150 ; CL = 220 F; RILIM = 50 k; Tamb = 25 C. (1) EN (1) EN (2) VBUS (2) VBUS (3) II(VINT) (3) II(VINT) Fig 17. Typical enable time and in-rush current DDD Fig 18. Typical enable time and in-rush current DDD 9%86 9 WHQ V 5,/,0ȍ EN = 1.5 V; VINT = 4 V; RL = 150 ; CL = 100 F; Tamb = 25 C. Fig 19. Typical enable time versus current limit resistance (RILIM) NX5P2190 Product data sheet WPV EN = 1.5 V; VINT = 4 V; RL = 150 ; CL = 100 F; RILIM = 50 k; Tamb = 25 C. Fig 20. Typical disable time All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 14 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch DDD DDD 9'(7 9 9%86 9 WPV 9%869 EN = 1.5 V; VINT = 5.5 V; RL = 150 ; CL = 100 F; RILIM = 50 k; Tamb = 25 C. Fig 21. Typical disable time NX5P2190 Product data sheet Fig 22. Typical VDET versus VBUS All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 15 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch 15. Package outline :/&63ZDIHUOHYHOFKLSVFDOHSDFNDJH EXPSVERG\[[PP%DFNVLGHFRDWLQJLQFOXGHG $ ( 1;38. % EDOO$ LQGH[DUHD $ $ ' $ GHWDLO; H & & $ % & Y Z E H \ & H H % $ EDOO$ LQGH[DUHD ; PP VFDOH 'LPHQVLRQVPPDUHWKHRULJLQDOGLPHQVLRQV 8QLW PP $ $ $ E ' ( PD[ QRP PLQ H H H Y Z \ Q[SXNBSR 2XWOLQH YHUVLRQ 5HIHUHQFHV ,(& -('(& -(,7$ (XURSHDQ SURMHFWLRQ ,VVXHGDWH 1;38. Fig 23. Package outline WLCSP9 package NX5P2190 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 16 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch P P %XPS 3, P 32 P 8%0 P DDD Fig 24. Ball dimensions WLCSP9 package 16. Abbreviations Table 14. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MOSFET Metal-Oxide Semiconductor Field Effect Transistor OCP OverCurrent Protection OTP OverTemperature Protection RCP Reverse Current Protection USB OTG Universal Serial Bus On-The-Go UVLO Under-voltage lockout VBUS USB Power Supply OVLO Over-voltage lockout 17. Revision history Table 15. Revision history Document ID Release date Data sheet status Change notice Supersedes NX5P2190 v.1.1 20150115 Product data sheet - NX5P2190 v.1 Modifications: NX5P2190 v.1 NX5P2190 Product data sheet • A text correction to the first paragraph on page 1. 20150113 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 - © NXP Semiconductors N.V. 2015. All rights reserved. 17 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch 18. Legal information 18.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 18.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 18.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. NX5P2190 Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 18 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 18.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 19. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] NX5P2190 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 15 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 19 of 20 NX5P2190 NXP Semiconductors Logic controlled high-side power switch 20. Contents 1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 8.9 8.10 9 10 11 12 13 13.1 13.2 13.3 14 14.1 15 16 17 18 18.1 18.2 18.3 18.4 19 20 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 4 EN input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Under-voltage lockout (UVLO) . . . . . . . . . . . . . 5 Over-voltage lockout (OVLO) . . . . . . . . . . . . . . 5 ILIM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Over-current protection (OCP) . . . . . . . . . . . . . 5 Over-temperature protection (OTP) . . . . . . . . . 5 Reverse bias current/back drive protection (RCP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 FAULT output . . . . . . . . . . . . . . . . . . . . . . . . . . 6 VDET output . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 In-rush current protection . . . . . . . . . . . . . . . . . 6 Application diagram . . . . . . . . . . . . . . . . . . . . . 7 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8 Recommended operating conditions. . . . . . . . 8 Thermal characteristics . . . . . . . . . . . . . . . . . . 8 Static characteristics. . . . . . . . . . . . . . . . . . . . . 9 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 ON resistance . . . . . . . . . . . . . . . . . . . . . . . . . 11 ON resistance test circuit and waveforms . . . 11 Dynamic characteristics . . . . . . . . . . . . . . . . . 12 Waveform and test circuits . . . . . . . . . . . . . . . 13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Contact information. . . . . . . . . . . . . . . . . . . . . 19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP Semiconductors N.V. 2015. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 15 January 2015 Document identifier: NX5P2190