Schottky Barrier Diodes (SBD) MA3J745E Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 • Two elements are contained in the (small S-mini type package), resulting in allowing high-density mounting • Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) Symbol Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IF 30 mA Forward current (DC) Single Peak forward Single current Double* Double* 150 3 + 0.1 0.15 − 0.05 0.9 ± 0.1 1 : Anode 1 2 : Anode 2 3 : Cathode 1, 2 EIAJ : SC-70 Flat S-Mini Type Package (3-pin) 20 IFM 1 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.3 − 0 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 + 0.1 ■ Features 0.425 Marking Symbol: M3D mA Internal Connection 110 Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1 3 Note) * : Value per chip 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 30 V 50 µA Forward voltage (DC) VF1 IF = 1 mA 0.3 V VF2 IF = 30 mA Terminal capacitance Ct VR = 1 V, f = 1 MHz 1.5 1.0 pF V Reverse recovery time* trr IF = IR = 10 mA 1.0 ns Detection efficiency η Vin = 3 V(peak), f = 30 MHz 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω 1 MA3J745E Schottky Barrier Diodes (SBD) IF V F 104 0.8 103 − 20°C 10 1 10–1 IF = 30 mA 0.6 10 mA 0.4 Reverse current IR (µA) Forward voltage VF (V) Forward current IF (mA) Ta = 125°C 1.0 Ta = 125°C 75°C 25°C 102 IR VR VF Ta 103 75°C 102 25°C 10 1 0.2 1 mA 10–2 0 0.4 0.8 1.2 1.6 2.0 10−1 0 −40 2.4 Forward voltage VF (V) 0 160 VR = 30 V 103 2.4 2.0 1.6 1.2 0.8 3V 1V 102 10 1 0.4 0 0 5 10 15 20 25 Reverse voltage VR (V) 2 30 10−1 −40 0 40 80 120 160 Ambient temperature Ta (°C) 0 5 10 15 20 25 Reverse voltage VR (V) IR T a Reverse current IR (µA) Terminal capacitance Ct (pF) 120 104 f = 1 MHz Ta = 25°C 2.8 80 Ambient temperature Ta (°C) Ct VR 3.2 40 200 30