Schottky Barrier Diodes (SBD) MA3S781E Silicon epitaxial planar type (cathode common) Unit : mm 1.60 − 0.03 0.80 0.80 0.51 0.51 ■ Features 1 + 0.05 • SS-mini type 3-pin package • Allowing high-density mounting • Cathode common type 0.28 ± 0.05 1.60 ± 0.1 0.80 0.80 ± 0.05 0.28 ± 0.05 For high-speed switching circuits 3 0.28 ± 0.05 2 Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IF 30 mA Average forward current Single Peak forward current Single Double 0.12 − 0.02 Rating + 0.05 Symbol 0.60 − 0.03 Parameter + 0.05 ■ Absolute Maximum Ratings Ta = 25°C 0.44 1 : Anode 1 2 : Anode 2 3 : Cathode SS-Mini Type Package (3-pin) 20 IFM 150 Double mA 110 Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.44 + 0.05 0.88 − 0.03 Marking Symbol: M2R Internal Connection 1 3 2 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 30 V 1.0 µA Forward voltage (DC) VF1 IF = 1 mA 0.4 V VF2 IF = 30 mA Terminal capacitance Ct VR = 1 V, f = 1 MHz 1.5 1.0 pF V Reverse recovery time* trr IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1.0 ns Detection efficiency η Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω 1 MA3S781E Schottky Barrier Diodes (SBD) IF V F 1.4 75°C 25°C 10 1 10−1 Reverse current IR (µA) 102 − 20°C Ta = 125°C Forward voltage VF (V) Forward current IF (mA) 103 1.6 102 1.2 1.0 0.8 IF = 30 mA 0.6 0.4 0 0.2 0.4 0.6 0.8 1.0 0 −40 1.2 Forward voltage VF (V) Ta = 125°C 10 75°C 1 25°C 10−1 3 mA 0.2 10−2 IR VR VF Ta 103 1 mA 10−2 0 40 80 120 160 200 0 IR T a 5 10 20 25 30 IF(surge) tW Ct VR 103 15 Reverse voltage VR (V) Ambient temperature Ta (°C) 1 000 3.0 VR = 30 V 10 V 1V 10 1 10−1 10−2 −40 40 80 120 Ambient temperature Ta 2 2.5 2.0 1.5 1.0 0.5 0 0 160 (°C) 200 Forward surge current IF(surge) (A) Reverse current IR (µA) 102 Terminal capacitance Ct (pF) Ta = 25°C 0 5 10 15 20 25 Reverse voltage VR (V) 30 300 IF ( surge ) tW 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 10 Pulse width tW (ms) 30