CCD Area Image Sensor MW39962AE Diagonal 11 mm (type-2/3) FIT CCD Area Image Sensor ■ Pin Assignments ■ Overview The MW39962AE is a type-2/3 2.2M-pixel frame interline transfer (FIT-CCD) solid state image sensor. This device uses photodiodes in the opto-electric conversion section and CCDs for signal read-out. The electronic shutter function allows for an exposure time of 1/10 000 seconds. Further, it features high sensitivity, low noise, broad dynamic range and low smear level. The device has a total of 2 182 860 pixels (2 010 horizontal × 1 086 vertical) and provides stable and clear images with a resolution of 1 100 horizontal and 730 vertical TV lines. Part Number CCD size MW39962AE 11 mm (type-2/3) System Color or B/W HDTV B/W PW RG RD OD VO LG HL H1 H2 PW IG HS OG N.C. B4 B3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 OB section 20 19 18 17 VS Sub A1 A2 A3 A4 A1 A2 A3 A4 B1 B2 B3 B4 B1 B2 (Top View) ■ Features • Effective pixel number: 1 936 (horizontal) × 1 086 (vertical) • High sensitivity • High resolution • Low smear level • Continuously variable-speed electronic shutter function • Frame interline transfer system ■ Applications • Broadcasting and professional use camera • Front-edge surveillance camera Publication date: December 2002 SMD00016AEC 1 MW39962AE ■ Device Configuration Parameter Value Unit Horizontal drive frequency fCK = 2 200 fH = 74.25 MHz Total pixel number 2 010 (H) × 1 086 (V) Pixel Effective pixel number (including transient ones) 1 936 (H) × 1 086 (V) Pixel Effective pixel number 1 920 (H) × 1 080 (V) Pixel Pixel size 5.0 (H) × 5.0 (V) µm2 Effective image sensor size 9.6 (H) × 5.4 (V) mm2 16 : 9 H:V 0.0 % Aspect ratio Aspect ration error • Element Construction PD area 1 3 2 8 Vertical dummy bit Effective pixel 1 920 8 72 OB shading part Transient area 1 080 3 Shading part 3 Vertical dummy bit 1 091 3 Horizontal dummy bit Storage area 2 010 0 Effective horizontal HCCD Horizontal dummy bit Note) The horizontal dummy bit is based on 2 gates = 1 unit. ■ Pin Descriptions Pin No. Symbol 2 Description Pin No. Symbol Description 1 PW P-well 11 IG Horizontal input gate 2 RG Reset gate 12 HS Horizontal input source 3 RD Reset drain 13 OG Output gate 4 OD Output drain 14 N.C. Non Connection 5 VO Video output 15 B4 Storage area vertical CCD gate 4 6 LG Output load transistor gate 16 B3 Storage area vertical CCD gate 3 7 HL Horizontal CCD final gate 17 B2 Storage area vertical CCD gate 2 8 H1 Horizontal CCD gate 1 18 B1 Storage area vertical CCD gate 1 9 H2 Horizontal CCD gate 2 19 B4 Storage area vertical CCD gate 4 10 PW P-well 20 B3 Storage area vertical CCD gate 3 SMD00016AEC MW39962AE ■ Pin Descriptions (continued) Pin No. Symbol Description Pin No. Symbol Description 21 B2 Storage area vertical CCD gate 2 27 A4 Sensor area vertical CCD gate 4 22 B1 Storage area vertical CCD gate 1 28 A3 Sensor area vertical CCD gate 3 23 A4 Sensor area vertical CCD gate 4 29 A2 Sensor area vertical CCD gate 2 24 A3 Sensor area vertical CCD gate 3 30 A1 Sensor area vertical CCD gate 1 25 A2 Sensor area vertical CCD gate 2 31 Sub Substrate 26 A1 Sensor area vertical CCD gate 1 32 VS Vertical input source ■ Absolute Maximum Ratings and Operating Conditions Absolute maximum rating Pin No. Parameter 1 PW 2 RG Operating condition Unit Lower limit Upper limit Min Typ Max Reference voltage 0.0 V Amplitude 0 9.0 4.7 5.0 5.3 V Low 0 1.0 adj. 8.0 V V 3 RD 0 18 14.3 14.5 14.7 4 OD 0 18 14.3 14.5 14.7 V 5 VO V 6 LG 0 6 1.0 adj. 4.0 V 7 φHL High 10 2.7 3.0 3.3 V Low 0 0.0 0.0 0.3 V High 10 2.7 3.0 3.3 V Low 0 0.0 0.0 0.3 V High 10 2.7 3.0 3.3 V Low 0 0.0 0.0 0.3 V Reference voltage 0.0 V 8 9 φH1 φH2 10 PW 11 IG 0 5 0.0 V 12 HS 0 18 15.7 16.0 16.3 V 13 OG 0 5 0.0 adj. 0.3 V 14 N.C. 15 φB4 Middle 18 − 0.3 0.0 0.3 V Low −12 −9.3 −9.0 −8.7 V Middle 18 − 0.3 0.0 0.3 V Low −12 −9.3 −9.0 −8.7 V Middle 18 − 0.3 0 0.3 V Low −12 −9.3 −9.0 −8.7 V Middle 18 − 0.3 0.0 0.3 V Low −12 −9.3 −9.0 −8.7 V Middle 18 − 0.3 0.0 0.3 V Low −12 −9.3 −9.0 −8.7 V 16 17 18 19 φB3 φB2 φB1 φB4 SMD00016AEC 3 MW39962AE ■ Absolute Maximum Ratings and Operating Conditions (continued) Absolute maximum rating Pin No. 20 21 22 23 24 25 26 27 28 29 30 31 32 Parameter φB3 φB2 φB1 φA4 φA3 φA2 φA1 φA4 φA3 φA2 φA1 Sub *1 Lower limit Upper limit Min Typ Max Unit Middle 18 − 0.3 0.0 0.3 V Low −12 −9.3 −9.0 −8.7 V Middle 18 − 0.3 0.0 0.3 V Low −12 −9.3 −9.0 −8.7 V Middle 18 − 0.3 0.0 0.3 V Low −12 −9.3 −9.0 −8.7 V Middle 18 − 0.3 0.0 0.3 V Low −12 −8.3 −8.0 −7.7 V High 18 14.7 15.0 15.3 V Middle 18 − 0.3 0.0 0.3 V Low −12 −8.3 −8.0 −7.7 V Middle 18 0.7 1.0 1.3 V Low −12 −8.3 −8.0 −7.7 V High 18 14.7 15.0 15.3 V Middle 18 − 0.3 0.0 0.3 V Low −12 −8.3 −8.0 −7.7 V Middle 18 − 0.3 0.0 0.3 V Low −12 −8.3 −8.0 −7.7 V High 18 14.7 15.0 15.3 V Middle 18 − 0.3 0.0 0.3 V Low −12 −8.3 −8.0 −7.7 V Middle 18 0.7 1.0 1.3 V Low −12 −8.3 −8.0 −7.7 V High 18 14.7 15.0 15.3 V Middle 18 − 0.3 0 0.3 V Low −12 −8.3 −8.0 −7.7 V 1 0 3.0 adj. 14.0 V 2 0 24.0 25.0 26.0 V 40 *2 VS 0 18 15.7 16.0 16.3 V Operating temperature −10 60 25 °C Storage temperature −30 70 °C Note) *1 : Sub pulse at the electronic shutter *2 : Upper limit of Sub maximum rating: Sub 1 + Sub 2 ≤ 40 V Sub 2 Sub 1 0V 4 Operating condition SMD00016AEC MW39962AE ■ Image Sensor Characteristics Ta = 25°C Parameter Conditions Saturation output F value adjust Min Typ Max Unit 650 800 mV Remarks at CCD out (Minimum point in image) Standard output J chart standard light intensity 140 155 mV Image lag 1/10 light intensity 0 % Able to be swept out directly to substrate Vertical smear 1/10 V −127 −124 dB Ratio to standard output at CCD out 2 MHz driving Dark H shading V 60°C, dark condition Electronic shutter Specified driving 2 mV at CCD out No abnormality within 1/100 to 1/2 000 seconds Note) 1. The substrate voltage (Sub 1) should be adjusted to the minimum voltage that would not cause blooming, overflow and injection at image sensor of light input of 1 600 times the standard light intensity. 2. The standard light intensity is the one when the exposure is done at an aperture of F/11 using a light source of 2 856K and 920 nt and placing a color temperature conversion filter LB-40 (HOYA) and an IR cutting filter CAW-500S (t = 2.5 mm) in the light path. ■ Package Dimensions (unit: mm) • WDIP032-G-0750A (Lead-free package) Tolerance: ±0.20 unless otherwise specified 33.00±0.3 25.50±0.3 B 16.32±0.3 D φ2.0 × 2.5 18.80±0.2 φ2.00 1 C 19.30±0.2 0.25±0.05 17 17.55±0.1 7.64±0.3 32 16 A 0.46±0.05 0.25 M 3.20±0.2 (0.80) 4.20±0.3 1.778±0.13 1.27±0.3 18.55±0.1 1. The package center does not meet the center of the effective pixel area. A is the center of the effective pixel area. 2. The reference of a vertical direction(V) is the side B. The reference of a horizontal direction(H) is the side C. The reference of a height direction is the package bottom D. 3. The rotation precision of the effective pixel area: maximum ±1.5° 4. The distance from the package bottom D to the effective pixel area : 1.69 mm ± 0.3 mm 5. The tilt of the effective pixel area toward the package bottom D : Up to 60 µm (D' = DO ± max. 0.03 mm) 6. The thickness of the seal glass is: 0.7 mm ± 0.1 mm, and the refractive index: 1.50 SMD00016AEC 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL