Discretes for USB Type-C connector in mobile device FEATURES & BENEFITS } ESD: TrEOS Protection SuperSpeed Differential Tx pair HighSpeed 2 x Differential pairs SuperSpeed Differential Rx pair - Low capacitance (0.1 pF) best signal integrity on HighSpeed lines - Low clamping with low Rdyn best system protection level - High ESD robustness (20 kV) strong protection for every application } EMI: PCMFxUSB3S Common Mode filter family - Strong Common Mode rejection at Wi-Fi frequencies - Integrated TrEOS ESD Protection } Power: Small leadless MOSFETs with low RDSon and high power density for power path and switching Side-Band Usage (SBU) Communication Channel (CC) } Package: Choice of small and thin packages for modern phones PRODUCT OPPORTUNITY TABLE Layout of new USB Type-C connector (receptacle front view) USB TYPE-C FEATURES Types PESD5V0R1BSF PESD5V0H1BSF PESD5V0C1USF } 4 SuperSpeed differential data pairs PESD5V0X2UAM(B) } 1 USB 2.0 HighSpeed differential data pair PCMFxUSB3S } 2 CC lines (orientation detect, set-up power option) PTVSxVZ1USK(N) } 2 SBU lines (Side-Band Usage signals for audio, etc.) } 4 VBUS lines (higher voltages and currents for USB PD and quick charging (5, 12, or 20 V up to 5 A) PMPB27EP PMPB13XNE PMXB43UNE Function ESD for HighSpeed lines ESD for HighSpeed lines ESD for HighSpeed lines SuperSpeed HighSpeed 2-line ESD for USB 2.0 HighSpeed SBU/CC Common Mode filter + ESD SuperSpeed TVS diode for VBUS MOSFET charger-path switching MOSFET charger-path switching MOSFET charger-path switching www.nxp.com © 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. VBUS Specification Package 0.1 pF, 10 kV, 0.45 Ω Rdyn, bidirectional 0.15 pF, 15 kV, 0.25 Ω Rdyn, bidirectional 0.4 pF, 20 kV, 0.2 Ω Rdyn, unidirectional DSN0603-2 DSN0603-2 DSN0603-2 0.8 pF, 15 kV, 0.65 Ω Rdyn, unidirectional DFN1006-3 Common Mode -38 dB @ 2.6 GHz; Differential Mode: f3dB = 5.8 GHz 1200 W @ IEC61000-4-5 DSN1608-2 30 V P-channel FET, 24 mΩ DFN2020MD-6 30 V N-channel FET, 13 mΩ DFN2020MD-6 20 V N-channel FET, 42 mΩ DFN1010D-3 WLCSP