PTVS5V0Z1USKN Transient voltage suppressor in DSN1608-2 for mobile applications 22 October 2015 Product data sheet 1. General description Unidirectional Transient Voltage Suppressor (TVS) in an ultra small leadless DSN1608-2 (SOD963) package, designed for transient overvoltage protection. 2. Features and benefits • • • • • Rated peak pulse current: IPPM = 80 A (8/20 µs pulse) Rated peak pulse power: PPPM = 1200 W (8/20 µs pulse) Dynamic resistance Rdyn = 0.06 Ω Reverse current: IRM = 0.025 µA Very low package height: 0.25 mm 3. Applications • • • Power supply protection Industrial application Power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IPPM peak pulse current tp = 8/20 µs tp = 10/1000 μs VRWM reverse standoff voltage [1] [2] [3] Tamb = 25 °C Min Typ Max Unit [1][2] - - 80 A [3][2] - - 20 A - - 5 V In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 µs current waveform). Measured from pin 1 to pin 2. In accordance with IEC 61643-321 (10/1000 µs current waveform). Scan or click this QR code to view the latest information for this product PTVS5V0Z1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K 2 A Simplified outline Graphic symbol cathode 1 1 anode 2 2 sym035 Transparent top view DSN1608-2 (SOD963) 6. Ordering information Table 3. Ordering information Type number PTVS5V0Z1USKN Package Name Description Version DSN1608-2 leadless ultra small package; 2 terminals; body 1.6 x 0.8 SOD963 x 0.25 mm 7. Marking Table 4. Marking codes Type number Marking code PTVS5V0Z1USKN Z2 PTVS5V0Z1USKN Product data sheet All information provided in this document is subject to legal disclaimers. 22 October 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 13 PTVS5V0Z1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions PPPM peak pulse power tp = 8/20 µs IPPM peak pulse current Min Max Unit [1][2] - 1200 W tp = 10/1000 μs [3][2] - 200 W tp = 8/20 µs [1][2] - 80 A tp = 10/1000 μs [3][2] - 20 A Tj junction temperature - 150 °C Tamb ambient temperature -40 125 °C Tstg storage temperature -65 150 °C ESD maximum ratings VESD electrostatic discharge voltage [1] [2] [3] [4] IEC 61000-4-2; contact discharge [4][2] - 30 kV IEC 61000-4-2; air discharge [4][2] - 30 kV In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 µs current waveform). Measured from pin 1 to pin 2. In accordance with IEC 61643-321 (10/1000 µs current waveform). Device stressed with ten non-repetitive ESD pulses. 001aaa631 001aaa630 120 IPP 100 % 100 % IPP; 8 µs IPP (%) 80 90 % e- t 50 % IPP; 20 µs 40 10 % 0 Fig. 1. 0 10 20 30 t (µs) 8/20 µs pulse waveform according to IEC 61000-4-5 and IEC 61643-321 PTVS5V0Z1USKN Product data sheet tr = 0.6 ns to 1 ns 40 t 30 ns 60 ns Fig. 2. ESD pulse waveform according to IEC 61000-4-2 All information provided in this document is subject to legal disclaimers. 22 October 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 13 PTVS5V0Z1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications 006aab319 150 IPP (%) 100 % IPP; 10 µs 100 50 % IPP; 1000 µs 50 0 Fig. 3. 0 1.0 2.0 3.0 tp (ms) 4.0 10/1000 µs pulse waveform according to IEC 61643-321 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage Tamb = 25 °C - - 5 V IRM reverse leakage current VR = 5 V; Tamb = 25 °C - 0.025 1 µA Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 1200 - pF VBR breakdown voltage IR = 10 mA; Tamb = 25 °C [1] 6.4 7 7.8 V VCL clamping voltage IPPM = 80 A; Tamb = 25 °C; tp = 8/20 µs [2][1] - - 18 V IPPM = 20 A; Tamb = 25 °C; [3][1] - - 12 V [4][1] - 0.06 - Ω [1] tp = 10/1000 μs Rdyn dynamic resistance [1] [2] [3] [4] PTVS5V0Z1USKN Product data sheet IR = 10 A; Tamb = 25 °C Measured from pin 1 to 2. In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 µs current waveform). In accordance with IEC 61643-321 (10/1000 µs current waveform). Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.5.1-2008. All information provided in this document is subject to legal disclaimers. 22 October 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 13 PTVS5V0Z1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications I aaa-018460 104 PPPM (W) 103 - VCL - VBR - VRWM - V - IRM - IR 102 + P-N 10 - IPP - IPPM Fig. 4. 006aab324 V-I characteristics for a unidirectional TVS protection diode 006aab321 1.2 PPPM 0.4 10 50 100 150 Tj (°C) 1 -100 200 Relative variation of rated peak pulse power as a function of junction temperature; typical values PTVS5V0Z1USKN Product data sheet tp (µs) 104 aaa-018461 IRM (nA) 102 0 103 Rated peak pulse power as a funtion of square pulse duration; typical values 0.8 0 102 103 PPPM(25°C) Fig. 6. Fig. 5. 10 Fig. 7. 100 Tamb (°C) 200 Relative variation of reverse leakage current as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. 22 October 2015 0 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 13 PTVS5V0Z1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications aaa-018462 30 IPP (A) 25 aaa-018463 5 Rdyn = 0.06 Ω Rdyn = 0.06 Ω IPP (A) -5 20 15 -15 10 5 -25 0 -5 0 2 4 6 8 VCL (V) -35 10 tp = 100 ns; Transmission Line Pulse (TLP) Fig. 8. -2 -1 VCL (V) 0 tp = 100 ns; Transmission Line Pulse (TLP) Dynamic resistance with positive clamping voltage; typical values Fig. 9. aaa-018464 18 -3 Dynamic resistance with negative clamping voltage; typical values aaa-018465 25 VCL (V) VCL (V) 20 12 15 10 6 5 0 0 40 80 IPP (A) 0 120 0 50 100 150 200 250 IPP (A) tp = 8/20 μs; according to IEC 61000-4-5 and tp = 8/20 μs; according to IEC 61000-4-5 and IEC IEC 61643-321 61643-321 Fig. 10. Dynamic resistance with positive clamping voltage; typical values PTVS5V0Z1USKN Product data sheet Fig. 11. Dynamic resistance with negative clamping voltage; typical values All information provided in this document is subject to legal disclaimers. 22 October 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 13 PTVS5V0Z1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications ESD TESTER 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax Rd 40 dB ATTENUATOR Cs 50 Ω DUT (DEVICE UNDER TEST) IEC 61000-4-2 ed.2 Cs = 150 pF; Rd = 330 Ω 10 2 V (kV) 8 V (kV) 0 6 -2 4 -4 2 -6 0 -8 -2 -10 0 10 20 30 40 50 t (ns) 60 70 -10 -10 unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) 0 10 20 30 40 50 t (ns) 60 70 unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) aaa-003952 Fig. 12. ESD clamping test setup and waveforms aaa-018466 25 VCL (V) 20 15 5 10 0 5 -5 VCL at 30 ns = 7.9 V 0 -10 -5 -15 -10 -10 0 10 20 30 40 50 60 t (ns) Fig. 13. Clamped +8 kV pulse waveform (IEC 61000-4-2 network) PTVS5V0Z1USKN Product data sheet aaa-018467 15 VCL (V) 10 70 -20 -10 VCL at 30 ns = -1.4 V 0 10 20 30 40 50 60 t (ns) 70 Fig. 14. Clamped -8 kV pulse waveform (IEC 61000-4-2 network) All information provided in this document is subject to legal disclaimers. 22 October 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 13 PTVS5V0Z1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications 10. Application information line to be protected (positive signal polarity) line to be protected (negative signal polarity) TVS diode TVS diode GND GND unidirectional protection of one line aaa-019403 Fig. 15. Application diagram 11. Package outline 0.8 0.25 1 1.6 2 Dimensions in mm 15-08-06 Fig. 16. Package outline DSN1608-2 (SOD963) PTVS5V0Z1USKN Product data sheet All information provided in this document is subject to legal disclaimers. 22 October 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 13 PTVS5V0Z1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications 12. Soldering SOD963 2 1.8 0.26 0.93 0.3 0.875 0.7 1 (Cu) 1.2 occupied area solder resist Cu pad solder paste Dimensions in mm 15-06-09 15-06-10 sod963_fr Fig. 17. Reflow soldering footprint for DSN1608-2 (SOD963) PTVS5V0Z1USKN Product data sheet All information provided in this document is subject to legal disclaimers. 22 October 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 13 PTVS5V0Z1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications 13. Revision history Table 7. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PTVS5V0Z1USKN v.2 20151022 Product data sheet - PTVS5V0Z1USKN v.1 Modifications: • PTVS5V0Z1USKN v.1 20150604 PTVS5V0Z1USKN Product data sheet Section 9. Characteristics: diode capacitance Cd and clamping voltage VCL updated Preliminary data sheet - All information provided in this document is subject to legal disclaimers. 22 October 2015 - © NXP Semiconductors N.V. 2015. All rights reserved 10 / 13 PTVS5V0Z1USKN NXP Semiconductors Transient voltage suppressor in DSN1608-2 for mobile applications In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 14. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 22 October 2015 © NXP Semiconductors N.V. 2015. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Characteristics ....................................................... 4 10 Application information .........................................8 11 Package outline ..................................................... 8 12 Soldering ................................................................ 9 13 Revision history ................................................... 10 14 14.1 14.2 14.3 14.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 22 October 2015 PTVS5V0Z1USKN Product data sheet All information provided in this document is subject to legal disclaimers. 22 October 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 13