TrEOS Protection – ESD protection without compromise Best system-chip ESD protection for 10 Gbps-ready devices The unique product family from NXP, the global leader in ESD protection, includes singleand multi-line devices, optimized for use with high-speed lines. The technology delivers the ideal combination of low capacitance, low clamping voltage, and high ESD robustness, to safeguard the systems of today and tomorrow. FEATURES `` Ultra-low capacitance down to 0.10 pF typ - Supports SuperSpeed USB at 10 Gbps `` Extremely low clamping voltages - Ultra-low dynamic resistance down to 0.10 Ω typ - Deep snap-back technology - Extremely fast switching times - Safeguards sensitive SoCs `` High ESD and surge robustness - Up to 20 kV contact discharge exceeds IEC 61000-4-2, level 4 - Up to 9 A (8/20 μs pulse IEC61000-4-5) APPLICATIONS `` Ultra-high-speed data lines including USB 3.1 at 10 Gbps and HDMI 2.0 `` Interface lines with very sensitive I/Os `` Generic ESD protection across the board PACKAGE OPTIONS TrEOS Protection devices are available in small, multi-line packages or in a tiny single-line 0603 (0201-inch) package. DFN2510A: 2.5 x 1.0 x 0.5 mm DFN2111-7: 2.1 x 1.1 x 0.5 mm DSN0603-2: 0.6 x 0.3 x 0.3 mm Selection guide Package Type DSN0603-2 CD typ/max (pF) Size (mm) VESD IEC 61000-4-2 (kV) IPPM for 8/20 µs surge pulse (A) RDYN (Ω) VRWM (V) Configuration PESD5V0R1BSF 5 1 x bidirectional 0.1/ 0.15 10 4.5 0.45 PESD5V0H1BSF 5 1 x bidirectional 0.15/ 0.19 15 7 0.25 PESD5V0C1BSF 5 1 x bidirectional 0.2/ 0.25 20 9 0.23 PESD5V0C1USF 5 1 x unidirectional 0.45/ 0.5 20 9 0.10 PUSB3FR4 5 4 x unidirectional 0.29/ 0.34 15 7 0.27 PUSB3AB6 5 6 x bidirectional 0.15/ 0.2 15 7 0.40 15 7 0.29 0.6 x 0.3 x 0.3 2.5 x 1 x 0.5 DFN2510A-10 2.1 x 1.1 x 0.5 DFN2111-7 PUSB3FR6 5 6 x unidirectional 0.35/ 0.4 Benchmark performance: Single-line devices Capacitance and dynamic resistance (0201 ESD devices) Dynamical resistance rdyn typ (Ω) 2.5 NXP TrEOS Protection Competing devices 2 Device ruggedness: ESD gun test with standard USB 3.1 interface. The NXP TrEOS Protection PUSB3FR4 device absorbs the most pulse energy and safeguards the SoC. 1.5 The same SoC was damaged, using an advanced snapback competitor product, at half the IEC voltage. 1 PESD5V0R1BSF Type number 0.5 um tim Op 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Capacitance and surge rating 8/20 µs (0201 ESD devices) 10 Op tim 9 um 8 7 VESD contact (kV) Minimum system survival of most sensitive pin (kV) NXP TrEOS Protection PUSB3FR4 15 +10 Competing device 15 +5 - +2 PESD5V0C1BSF PESD5V0H1BSF Capacitance Cd typ (pF) Peak pulse current maximum IPPM (A) Benchmark performance: Multi-line device Device with no protection NXP TrEOS Protection Competing devices PESD5V0C1BSF PESD5V0H1BSF 6 5 RESOURCES & ORDERING Visit: www.nxp.com/circuit-protection PESD5V0R1BSF 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Capacitance Cd typ (pF) Capacitance and ESD robustness (0201 ESD devices) NXP TrEOS Protection Competing devices tim Op 25 um ESD robustness VESD (kV) 30 PESD5V0C1BSF 20 15 PESD5V0R1BSF 10 PESD5V0H1BSF 5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Capacitance Cd typ (pF) www.nxp.com © 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The Date of release: May 2015 information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and Document order number: 9397 750 17654 may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof Printed in the Netherlands does not convey nor imply any license under patent- or other industrial or intellectual property rights.