PANASONIC MA2Z304

Variable Capacitance Diodes
MA2Z304 (MA304)
Silicon epitaxial planar type
Unit: mm
0.30+0.10
–0.05
For VCO
2
1
Unit
30
V
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.9±0.1
Rating
VR
0.00±0.05
Symbol
0.90±0.15
7˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
0.16 +0.10
–0.06
(0.4)
1.25±0.10
Reverse voltage (DC)
(0.4)
5˚
• Good linearity and large capacitance-ratio in CD − VR relation
• Small series resistance rD
• S-Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
2.5±0.2
1.7±0.10
■ Features
1: Anode
2: Cathode
SMini2-G1 Package
Marking Symbol: 8R
■ Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Diode capacitance
Symbol
IR
Conditions
Min
VR = 28 V
Typ
Max
Unit
10
nA
pF
CD(1V)
VR = 1 V, f = 1 MHz
24.8
29.8
CD(4V)
VR = 4 V, f = 1 MHz
6.0
8.3
Capacitance ratio
CD(1V)/CD(4V)
Series resistance *
rD

3.0
VR = 4 V, f = 100 MHz
1.0
Ω
Note) 1. Rated input/output frequency: 100 MHz
2. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2002
SKD00027BED
1
MA2Z304
I F  VF
CD  VR
120
100
25°C
80
−40°C
60
40
20
1.03
4V
20
10
5
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage VF (V)
0
4
8 12 16 20 24 28 32 36 40
Reverse voltage VR (V)
IR  T a
Reverse current IR (nA)
100
VR = 28 V
10
1
0.1
0.01
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)
2
1.01
1.00
0.99
1
0
1.02
3
2
0
VR = 1 V
f = 1 MHz
30
CD (Ta)
CD (Ta = 25°C)
Ta = 60°C
50
Diode capacitance CD (pF)
Forward current IF (mA)
100
CD  Ta
1.04
f = 1 MHz
Ta = 25°C
SKD00027BED
0.98
0
20
40
60
80
Ambient temperature Ta (°C)
100
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2001 MAR
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