CNY651 Series www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage FEATURES • Rated recurring peak voltage (repetitive) VIORM = 1450 Vpeak • Thickness through insulation ≥ 3 mm • Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI ≥ 475 • Moisture sensitivity level MSL4 - Follow defined storage and soldering requirements for CNY651ST devices • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View CNY651ST A C C E CNY651 V D E APPLICATIONS 17187-5 • Solar and wind power diagnostic, monitoring, and communication equipment • Welding equipment • High voltage motors • Switch-mode power supplies • Line receiver • Computer peripheral interface • Microprocessor system interface • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I to IV at mains voltage ≤ 300 V - for appl. class I to IV at mains voltage ≤ 600 V - for appl. class I to III at mains voltage ≤ 1000 V according to DIN EN 60747-5-5 (VDE 0884-5) DESCRIPTION The CNY651 Series are high isolation voltage TH and SMD version optocouplers consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm. VDE STANDARDS These couplers perform safety functions according to the following equipment standards: • DIN EN 60747-5-5 (VDE 0884-5) Optocoupler for electrical safety requirements AGENCY APPROVALS Safety application model number covering all products in this datasheet is CNY651. This model number should be used when consulting safety agency documents. • DIN EN 60747-5-5 (VDE 0884-5) • UL1577, file no. E76222 • VDE related features: - rated impulse voltage (transient overvoltage), VIOTM = 12 kVpeak - isolation test voltage (partial discharge test voltage), Vpd = 2.8 kVpeak ORDERING INFORMATION C N Y 6 PART NUMBER 5 1 X X X PACKAGE OPTION DIP-4 HV, 600 mil high isolation distance SMD-4 HV, 600 mil high isolation distance Rev. 1.0, 12-Feb-14 T CTR BIN CNY651 CNY651ST 15.24 mm 15.24 mm CTR (%) AGENCY CERTIFIED/PACKAGE UL, VDE S 5 mA 50 to 150 100 to 300 - CNY651AGR CNY651AYST CNY651AGRST Document Number: 82566 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY651 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5 V Forward current IF 75 mA tp ≤ 10 μs Forward surge current IFSM 1.5 A Pdiss 120 mW Tj 125 °C Collector emitter voltage VCEO 32 V Emitter collector voltage VECO 7 V Power dissipation Junction temperature OUTPUT Collector current tp/T = 0.5, tp ≤ 10 ms Collector peak current Power dissipation Junction temperature IC 50 mA ICM 100 mA Pdiss 130 mW Tj 125 °C COUPLER DC isolation test voltage CNY651A...ST VISO 13.9 kV Total power dissipation t=1s Ptot 250 mW Ambient temperature range Tamb -40 to +110 °C Tstg -40 to +110 °C Tsld 260 °C Storage temperature range Soldering temperature 2 mm from case, ≤ 10 s Ptot - Total Power Dissipation (mW) Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. 300 250 Coupled device 200 Phototransistor 150 100 IR-diode 50 0 0 40 80 120 Tamb - Ambient Temperature (°C) Fig. 1 - Total Power Dissipation vs. Ambient Temperature Rev. 1.0, 12-Feb-14 Document Number: 82566 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY651 Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.6 UNIT INPUT Forward voltage IF = 50 mA VF 1.32 VR = 0 V, f = 1 MHz Cj 50 Collector emitter voltage IC = 1 mA VCEO 32 Emitter collector voltage IE = 100 μA VECO 7 VCE = 20 V, IF = 0 mA ICEO 200 nA IF = 10 mA, IC = 1 mA VCEsat 0.3 V Junction capacitance V pF OUTPUT Collector emitter leakage current V V COUPLER Collector emitter saturation voltage Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz f = 1 MHz Ck 0.3 pF Coupling capacitance Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER IC/IF TEST CONDITION VCE = 5 V, IF = 5 mA BIN SYMBOL MIN. AY. CTR 50 TYP. MAX. 150 UNIT % AGR. CTR 100 300 % SAFETY AND INSULATION RATINGS PARAMETER SYMBOL VALUE UNIT Output safety power PSO 250 mW Input safety current Isi 120 mW Safety temperature TS 150 °C Comparative tracking index CTI 475 VISO 8200 VRMS Maximum transient isolation voltage VIOTM 12 000 Vpeak Maximum repetitive peak isolation voltage VIORM 1450 Vpeak MAXIMUM SAFETY RATINGS INSULATION RATED PARAMETERS Maximum withstanding isolation voltage Insulation resistance Tamb = 25 °C, VDC = 500 V RIO ≥ 1012 Ω Isolation resistance Tamb = 100 °C, VDC = 500 V RIO ≥ 1011 Ω Climatic classification (according to IEC 68 part 1) 40/110/21 Environment (pollution degree in accordance to DIN VDE 0109) 2 Creepage Insulation thickness DTI ≥ 14 mm 3 mm Note • According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Rev. 1.0, 12-Feb-14 Document Number: 82566 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY651 Series www.vishay.com Vishay Semiconductors VIOTM 250 225 t1, t2 t3 , t4 ttest tstres Pso (mW) 200 175 150 Vpd 125 VIOWM VIORM 100 75 = 1 s to 10 s =1s = 10 s = 12 s Isi (mA) 50 25 0 t3 ttest t4 0 0 25 50 75 100 125 150 175 200 tTr = 60 s t1 13930 t2 Tamb (°C) 22292 t stres t Fig. 2 - Safety Derating Diagram Fig. 3 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5 (VDE 0884-5); IEC60747-5-5 SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) td 2.6 μs Rise time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) tr 2.4 μs Fall time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) tf 2.7 μs Storage time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) ts 0.3 μs Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) ton 5 μs Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) toff 3 μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) ton 25 μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) toff 42.5 μs IF 0 +5V IF IF IC = 5 mA; adjusted through input amplitude 0 tp IC 100 % 90 % RG = 50 tp = 0.01 T tp = 50 µs Channel I Channel II 50 100 Oscilloscope RL 1 M CL 20 pF 10 % 0 tr td t on 95 10900 Fig. 4 - Test Circuit, Non-Saturated Operation IF t +5V I F = 10 mA 0 tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time ts tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 6 - Switching Times IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 5 - Test Circuit, Saturated Operation Rev. 1.0, 12-Feb-14 Document Number: 82566 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY651 Series www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 Tamb = 110 °C Tamb = 25 °C Tamb = 0 °C Tamb = -40 °C 10 ICEO - Leakage Current (nA) IF - Forward Current (mA) 100 1 0.1 0.6 0.8 1.0 1.2 1.4 1000 100 10 VCE = 12 V 1 V = 24 V CE 0.1 0.001 -55 -35 -15 1.6 5 25 45 65 85 105 125 Tamb - Ambient Temperature (°C) Fig. 7 - Forward Current vs. Forward Voltage Fig. 10 - Leakage Current vs. Ambient Temperature 1.2 40 NCTR - Normalized CTR (sat.) 45 IC - Collector Current (mA) VCE = 40 V 0.01 VF - Forward Voltage (V) IF = 30 mA 35 30 IF = 20 mA 25 20 IF = 15 mA 15 IF = 10 mA 10 5 IF = 5 mA 0 2 4 6 8 10 1.0 0.8 0.6 0.4 0.2 Normalized to: VCE = 0.4 V, IF = 5 mA, Tamb = 25 °C 0 -55 -35 -15 0 12 5 25 45 65 85 105 125 Tamb - Ambient Temperature (°C) VCE - Collector Emitter Voltage (V) Fig. 8 - Collector Current vs. Collector Emitter Voltage (NS) Fig. 11 - Normalized CTR (sat.) vs. Ambient Temperature 1.2 30 IF = 25 mA NCTR - Normalized CTR (NS) IC - Collector Current (mA) IF = 0 A 25 20 15 IF = 10 mA 10 IF = 5 mA 5 IF = 1 mA IF = 2 mA 0 0 0.1 0.2 0.3 0.4 0.5 VCE - Collector Emitter Voltage (V) Fig. 9 - Collector Current vs. Collector Emitter Voltage Rev. 1.0, 12-Feb-14 1.0 0.8 0.6 0.4 0.2 Normalized to: VCE = 5 V, IF = 5 mA, Tamb = 25 °C 0 -55 -35 -15 5 25 45 65 85 105 125 Tamb - Ambient Temperature (°C) Fig. 12 - Normalized CTR (NS) vs. Ambient Temperature Document Number: 82566 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY651 Series www.vishay.com 1.2 0.6 -20 Tamb = - 40 °C Tamb = 25 °C 0.4 -40 -60 -80 -100 -120 Tamb = 110 °C -140 0.2 -160 0.0 -180 0.1 1 10 100 IF - Forward Current (mA) 1 1.4 0.8 0.6 Tamb = - 40 °C Tamb = 25 °C 0.4 Tamb = 110 °C 0.2 0.0 VCE = 5 V, IF = 10 mA 1 10 10 ton 1 100 22517 IF - Forward Current (mA) Fig. 14 - Normalized CTR (sat.) vs. Forward Current toff 100 0.1 0.1 1000 Fig. 16 - Phase Angle vs. FCTR ton, toff - Switching Time (μs) Tamb = 0 °C 1.0 100 1000 Normalized to: VCE = 5 V, IF = 5 mA, Tamb = 25 °C 1.2 10 Frequency (kHz) 22516 Fig. 13 - Normalized CTR (NS) vs. Forward Current NCTR - Normalized CTR (sat) VCE = 5 V 0 Tamb = 0 °C 1.0 0.8 20 Normalized to: VCE = 5 V, IF = 5 mA, Tamb = 25 °C Phase (deg) NCTR - Normalized CTR (NS) 1.4 Vishay Semiconductors 0.1 1 10 100 RL - Load Resistance (kΩ) Fig. 17 - Switching Time vs. Load Resistance 1000 FCTR (kHz) VCE = 5 V 100 10 1 0.1 1 10 100 IC - Collector Current (mA) 22515 Fig. 15 - FCTR vs. Collector Current Rev. 1.0, 12-Feb-14 Document Number: 82566 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY651 Series www.vishay.com Vishay Semiconductors SOLDERING GUIDLINES Soldering Condition Floor Life The CNY651AxST are lead (Pb)-free devices. They are suitable for reflow soldering. However due to large package size, the peak package body temperature should not go above 245 °C. Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 72 h Conditions: Tamb < 30 °C, RH < 60 % 300 Moisture sensitivity level 4, according to J-STD-020. Temperature (°C) 250 245 °C 240 °C 217 °C Drying In case of moisture absorption devices should be baked before soldering according to the recommended conditions shown below 200 max. 20 s 150 max. 100 s max. 120 s 48 h at 125 °C ± 5 °C, RH < 5% 100 max. ramp down 6 °C/s 50 (Not suitable for tape and reel) max. ramp up 3 °C/s In case the floor time has not exceeded 10 days the units can be baked in tape and reel according to the following conditions max. 2 cycles allowed 0 0 50 100 150 200 250 300 168 h at 60 °C ± 5 °C, RH < 5 % Time (s) 22550 (Not suitable, if the floor time was exceeded by more than 10 days, or the allowed factory condition is exceeded) Drypack These devices have a moisture sensitivity level MSL4 thus they are packed in moisture barrier bags (MBB) to prevent moisture absorption during transportation and storage. Each bag contains a desiccant bag. CNY651 - DIP version device cannot go through reflow soldering hence wave soldering should be used. See absolute maximum ratings for soldering specifications. PACKAGE DIMENSIONS in millimeters FOR CNY651A...ST 19.4 ± 0.3 17.8 ± 0.2 6.1 ± 0.2 9.6 ± 0.2 7.15 ± 0.4 0.4 ± 0.1 Z 0.5 ± 0.2 2.1 ± 0.5 7.62 ± 0.4 Leads coplanarity 0.1 max. Anode Cathode Z 10:1 Collector Recommended footprint Emitter 20.9 2.9 technical drawings according to DIN specifications 7.62 14 Rev. 1.0, 12-Feb-14 Document Number: 82566 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY651 Series www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters FOR CNY651A... 9.6 ± 0.1 9.1 ± 0.3 6.1 ± 0.1 17.8 ± 0.1 7.62 ± 0.2 15.24 ± 0.2 Anode Collector Cathode technical drawings according to DIN specifications Emitter PACKAGE MARKING (Example of CNY651AYST) CNY651AYS V YWWJ 69 Note • The “T” at the end of the product designation is not marked on the package TUBE AND TAPE INFORMATION TUBE INFORMATION TYPE UNITS/TUBE TUBES/BOX UNITS/BOX 30 35 1050 CNY651 15914 Fig. 18 - CNY651 TAPE DIMENSIONS in millimeters FOR CNY651A...ST Ø 1.55 ± 0.05 1.75 ± 0.1 2 ± 0.15 9.9 4 ± 0.1 8 0.4 ± 0.05 Top cover tape 14.2 ± 0.10 18.1 25.5 32 ± 0.3 16 ± 0.1 Leader (start) min. 400 mm without devices Trailer (end) min. 200 mm without devices Rev. 1.0, 12-Feb-14 Ø 2 min. 5.65 Direction of feed Document Number: 82566 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY651 Series www.vishay.com Vishay Semiconductors REEL DIMENSIONS in millimeters Reel size "Y" T: Ø 330 ± 2 Unreel direction 2± Ø 60 min. Tape position coming out from reel ØY 0.5 Ø 21 ± 0.8 32.4 + 2/0 38.4 max. Ø 13 ± 0.2 Not indicated tolerances ± 0.1 Label posted here Empty leader 400 mm min. Parts mounted 100 mm min. with cover tape Leader and trailer tape: Empty trailer 200 mm min. Direction of pulling out Fig. 19 - 400 Units per Reel, 2 Reels per Box Rev. 1.0, 12-Feb-14 Document Number: 82566 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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