BPW21R www.vishay.com Vishay Semiconductors Silicon Photodiode FEATURES • Package type: leaded • Package form: TO-5 • Dimensions (in mm): Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity • Angle of half sensitivity: ϕ = ± 50° 94 8394 • Hermetically sealed package • Cathode connected to package DESCRIPTION • Flat glass window BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. • Low dark current Due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of illumination level. • Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC On the other hand, there is a strictly logarithmic correlation between open circuit voltage and illumination over the same range. APPLICATIONS • High shunt resistance • High linearity • Sensor in exposure and color measuring purposes The device is equipped with a flat glass window with built in color correction filter, giving an approximation to the spectral response of the human eye. PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.5 (nm) 9 ± 50 420 to 675 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 500 pcs, 500 pcs/bulk TO-5 BPW21R Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE BPW21R Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 50 °C Junction temperature SYMBOL VALUE VR 10 UNIT V PV 300 mW Tj 125 °C Operating temperature range Tamb - 40 to + 125 °C Storage temperature range Tstg - 40 to + 125 °C t≤5s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 250 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.7, 23-Nov-11 Document Number: 81519 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW21R www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF IR = 20 μA, E = 0 V(BR) VR = 5 V, E = 0 Iro Forward voltage Breakdown voltage Reverse dark current Diode capacitance TYP. MAX. UNIT 1.0 1.3 V 2 30 nA 10 V VR = 0 V, f = 1 MHz, E = 0 CD 1.2 nF VR = 5 V, f = 1 MHz, E = 0 CD 400 pF 38 GΩ Dark resistance VR = 10 mV RD Open circuit voltage EA = 1 klx Vo Temperature coefficient of Vo EA = 1 klx TKVo Short circuit current EA = 1 klx Ik Temperature coefficient of IK 280 4.5 EA = 1 klx TKIk EA = 1 klx, VR = 5 V Ira VR = 5 V, EA = 10-2 to 105 lx Reverse light current Sensitivity MIN. 4.5 450 mV -2 mV/K 9 μA - 0.05 %/K 9 μA S 9 nA/Ix Angle of half sensitivity ϕ ± 50 deg Wavelength of peak sensitivity λp 565 nm Range of spectral bandwidth λ0.5 420 to 675 nm Rise time VR = 0 V, RL = 1 kΩ, λ = 660 nm tr 3.1 μs Fall time VR = 0 V, RL = 1 kΩ, λ = 660 nm tf 3.0 μs BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.3 10 3 10 2 VR = 5 V 10 1 10 20 94 8468 40 60 80 100 1.2 1.1 1.0 0.9 0.8 120 Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.7, 23-Nov-11 Ira rel - RelativeReverse Light Current I ro - Reverse Dark Current (nA) 10 4 0 94 8738 20 40 60 80 100 120 Tamb - Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81519 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW21R www.vishay.com 0° 3 10° 20° 10 1 10 0 10 -1 10 -2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 10 -3 ϕ - Angular Displacement 30° 10 2 Srel - Relative Sensitivity IK - Short Circuit Current (µA) 10 Vishay Semiconductors 80° 10 -4 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 10 6 EA - Illuminance (lx) 94 8476 0.6 0.4 0.2 0 94 8475 Fig. 3 - Short Circuit Current vs. Illuminance Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement C D - Diode Capacitance (pF) 1400 1200 E=0 f = 1 MHz 1000 800 600 400 200 0 0.1 1 10 100 V R - Reverse Voltage (V) 94 8473 S (λ)rel - Relative Spectral Sensitivity Fig. 4 - Diode Capacitance vs. Reverse Voltage 1.0 0.8 0.6 0.4 0.2 0 350 94 8477 V λ Eye 450 550 650 750 λ - Wavelength (nm) Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Rev. 1.7, 23-Nov-11 Document Number: 81519 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW21R www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 9.1 ± 0.1 + 5.08 nom. ± 0.1 Ø 5.9 ± 0.1 3.1 ± 0.2 Ø 8.13 14 -1 (1.65) Chip position technical drawings according to DIN specifications Ø 0.45 + 0.02 - 0.05 Drawing-No.: 6.511-5002.01-4 Issue:1; 01.07.96 96 12181 Rev. 1.7, 23-Nov-11 Document Number: 81519 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000