TEKT5400S Datasheet

TEKT5400S
www.vishay.com
Vishay Semiconductors
Silicon NPN Phototransistor
FEATURES
• Package type: leaded
• Package form: side view lens
• Dimensions (L x W x H in mm): 5 x 2.65 x 5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 37°
16733
• Package matched with IR emitter series TSKS5400S
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DESCRIPTION
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
TEKT5400S is a silicon NPN phototransistor with high
radiant sensitivity, molded in a plastic package with side
view lens and daylight blocking filter. Filter bandwidth is
matched with 950 nm IR emitters.
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
Ica (mA)
ϕ (deg)
λ0.5 (nm)
4
± 37
850 to 980
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 2000 pcs, 2000 pcs/bulk
Side view lens
TEKT5400S
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TEKT5400S
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
mA
Collector current
Collector peak current
Power dissipation
UNIT
IC
100
tp/T ≤ 0.5, tp ≤ 10 ms
ICM
200
mA
Tamb ≤ 40 °C
PV
150
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
t≤5s
Tsd
260
°C
J-STD-051, soldered on PCB
RthJA
270
K/W
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.6, 23-Aug-11
Document Number: 81569
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEKT5400S
www.vishay.com
Vishay Semiconductors
PV - Power Dissipation (mW)
120
100
80
60
RthJA = 270 K/W
40
20
0
0
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21331
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
MIN.
Collector emitter voltage
IC = 1 mA
VCEO
70
Emitter collector voltage
IE = 100 μA
VECO
7
VCE = 20 V, E = 0
ICEO
1
VCE = 5 V, f = 1 MHz, E = 0
CCEO
6
pF
Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V
Ica
4
mA
PARAMETER
Collector dark current
Collector emitter capacitance
Collector ligth current
TYP.
MAX.
UNIT
V
V
2
100
nA
Angle of half sensitivity
ϕ
± 37
deg
Wavelength of peak sensitivity
λp
920
nm
λ0.5
850 to 980
Range of spectral bandwidth
Collector emitter saturation voltage Ee = 1 mW/cm2, λ = 950 nm,IC = 0.1 mA
VCEsat
nm
0.3
V
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100 Ω
ton
6
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100 Ω
toff
5
μs
Cut-off frequency
VS = 5 V, IC = 5 mA, RL = 100 Ω
fc
110
kHz
μs
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
2.0
Ica rel - Relative Collector Current
ICEO - Collector Dark Current (nA)
104
103
VCE = 10 V
102
101
VCE = 5 V
Ee = 1 mW/cm2
λ = 950 nm
1.6
1.4
1.2
1.0
0.8
0.6
10
40
20
94 8249
1.8
60
80
Tamb - Ambient Temperature (°C)
Fig. 1 - Collector Dark Current vs. Ambient Temperature
Rev. 1.6, 23-Aug-11
0
100
94 8239
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Collector Current vs. Ambient Temperature
Document Number: 81569
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEKT5400S
www.vishay.com
Vishay Semiconductors
12
ton/toff - Turn-on/Turn-off Time (µs)
TEKT5400S
1
0.1
V CE = 5 V
λ = 950 nm
0.01
0.01
0.1
1
E e =1mW/cm 2
0.5 mW/cm 2
1
0.2 mW/cm 2
0.1 mW/cm 2
1
10
0
4
8
12
Fig. 6 - Turn-on/Turn-off Time vs. Collector Current
1.0
0.8
0.6
0.4
0.2
0
700
800
900
1000
1100
λ - Wavelength (nm)
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
30°
I e rel - Relative Radiant Intensity
20
f = 1 MHz
16
12
94 8247
16
IC - Collector Current (mA)
94 8270
Fig. 4 - Collector Light Current vs. Collector Emitter Voltage
CCEO - Collector Ermitter Capacitance (pF)
toff
2
100
V CE - Collector Ermitter Voltage (V)
16718
ton
4
0
S ( λ) rel - Relative Spectral Sensitivity
Ica - Collector Light Current (mA)
10
0.1
0.1
6
94 8253
Fig. 3 - Collector Light Current vs. Irradiance
λ = 950 nm
8
10
Ee - Irradiance (mW/cm 2)
16707
VCE = 5 V
RL = 100 Ω
λ = 950 nm
10
8
4
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
Ica - Collector Light Current (mA)
10
80°
0
0.1
1
10
100
VCE - Collector Ermitter Voltage (V)
Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Rev. 1.6, 23-Aug-11
0.6
0.4
0.2
0
16732
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81569
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEKT5400S
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
16706
Rev. 1.6, 23-Aug-11
Document Number: 81569
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEKT5400S
www.vishay.com
Vishay Semiconductors
TAPE AND AMMOPACK STANDARDS Dimensions in millimeters
Labeling: barcode-label see 5.6.4
16716
Rev. 1.6, 23-Aug-11
Measure limit over 20 index-holes: ± 1
Document Number: 81569
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000