TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions (L x W x H in mm): 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times • Angle of half sensitivity: ϕ = ± 37° 16733 • Package matched with IR emitter series TSKS5400S • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 TEKT5400S is a silicon NPN phototransistor with high radiant sensitivity, molded in a plastic package with side view lens and daylight blocking filter. Filter bandwidth is matched with 950 nm IR emitters. APPLICATIONS • Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT Ica (mA) ϕ (deg) λ0.5 (nm) 4 ± 37 850 to 980 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 2000 pcs, 2000 pcs/bulk Side view lens TEKT5400S Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TEKT5400S Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V mA Collector current Collector peak current Power dissipation UNIT IC 100 tp/T ≤ 0.5, tp ≤ 10 ms ICM 200 mA Tamb ≤ 40 °C PV 150 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C t≤5s Tsd 260 °C J-STD-051, soldered on PCB RthJA 270 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.6, 23-Aug-11 Document Number: 81569 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEKT5400S www.vishay.com Vishay Semiconductors PV - Power Dissipation (mW) 120 100 80 60 RthJA = 270 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21331 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL MIN. Collector emitter voltage IC = 1 mA VCEO 70 Emitter collector voltage IE = 100 μA VECO 7 VCE = 20 V, E = 0 ICEO 1 VCE = 5 V, f = 1 MHz, E = 0 CCEO 6 pF Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V Ica 4 mA PARAMETER Collector dark current Collector emitter capacitance Collector ligth current TYP. MAX. UNIT V V 2 100 nA Angle of half sensitivity ϕ ± 37 deg Wavelength of peak sensitivity λp 920 nm λ0.5 850 to 980 Range of spectral bandwidth Collector emitter saturation voltage Ee = 1 mW/cm2, λ = 950 nm,IC = 0.1 mA VCEsat nm 0.3 V Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω ton 6 Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 5 μs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 110 kHz μs BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 2.0 Ica rel - Relative Collector Current ICEO - Collector Dark Current (nA) 104 103 VCE = 10 V 102 101 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 10 40 20 94 8249 1.8 60 80 Tamb - Ambient Temperature (°C) Fig. 1 - Collector Dark Current vs. Ambient Temperature Rev. 1.6, 23-Aug-11 0 100 94 8239 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Collector Current vs. Ambient Temperature Document Number: 81569 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEKT5400S www.vishay.com Vishay Semiconductors 12 ton/toff - Turn-on/Turn-off Time (µs) TEKT5400S 1 0.1 V CE = 5 V λ = 950 nm 0.01 0.01 0.1 1 E e =1mW/cm 2 0.5 mW/cm 2 1 0.2 mW/cm 2 0.1 mW/cm 2 1 10 0 4 8 12 Fig. 6 - Turn-on/Turn-off Time vs. Collector Current 1.0 0.8 0.6 0.4 0.2 0 700 800 900 1000 1100 λ - Wavelength (nm) Fig. 7 - Relative Spectral Sensitivity vs. Wavelength 0° 10° 20° 30° I e rel - Relative Radiant Intensity 20 f = 1 MHz 16 12 94 8247 16 IC - Collector Current (mA) 94 8270 Fig. 4 - Collector Light Current vs. Collector Emitter Voltage CCEO - Collector Ermitter Capacitance (pF) toff 2 100 V CE - Collector Ermitter Voltage (V) 16718 ton 4 0 S ( λ) rel - Relative Spectral Sensitivity Ica - Collector Light Current (mA) 10 0.1 0.1 6 94 8253 Fig. 3 - Collector Light Current vs. Irradiance λ = 950 nm 8 10 Ee - Irradiance (mW/cm 2) 16707 VCE = 5 V RL = 100 Ω λ = 950 nm 10 8 4 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ica - Collector Light Current (mA) 10 80° 0 0.1 1 10 100 VCE - Collector Ermitter Voltage (V) Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage Rev. 1.6, 23-Aug-11 0.6 0.4 0.2 0 16732 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 81569 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEKT5400S www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 16706 Rev. 1.6, 23-Aug-11 Document Number: 81569 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEKT5400S www.vishay.com Vishay Semiconductors TAPE AND AMMOPACK STANDARDS Dimensions in millimeters Labeling: barcode-label see 5.6.4 16716 Rev. 1.6, 23-Aug-11 Measure limit over 20 index-holes: ± 1 Document Number: 81569 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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