TEFT4300 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times 94 8636-2 • Angle of half sensitivity: ϕ = ± 30° • Package matched with IR emitter series TSUS4300 and TSAL4400 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION TEFT4300 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1 plastic package with daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. APPLICATIONS • Optical switches • Counters and sorters • Interrupters • Encoders • Position sensors PRODUCT SUMMARY Ica (mA) ϕ (deg) λ0.5 (nm) 3.2 ± 30 875 to 1000 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 COMPONENT TEFT4300 Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TEFT4300 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Collector emitter voltage TEST CONDITION VCEO 70 V Emitter collector voltage VECO 5 V mA Collector current UNIT IC 50 tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Tamb ≤ 55 °C PV 100 mW Tj 100 °C Operating temperature range Tamb -40 to +100 °C Storage temperature range Tstg -40 to +100 °C t ≤ 3 s, 2 mm from case Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 450 K/W Collector peak current Power dissipation Junction temperature Soldering temperature Thermal resistance junction/ambient Rev. 1.7, 04-Aug-14 Document Number: 81549 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEFT4300 www.vishay.com Vishay Semiconductors PV - Power Dissipation (mW) 125 100 75 RthJA = 450 K/W 50 25 0 0 94 8308 20 40 60 100 80 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 70 VCE = 20 V, E = 0 ICEO VCE = 5 V, f = 1 MHz, E = 0 CCEO Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V Ica Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Collector light current TYP. MAX. UNIT 1 200 nA V 0.8 3 pF 3.2 mA deg Angle of half sensitivity ϕ ± 30 Wavelength of peak sensitivity λp 925 nm λ0.5 875 to 1000 nm Range of spectral bandwidth Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VCEsat Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω ton 2 μs Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 2.3 μs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 180 kHz Collector emitter saturation voltage 0.3 V BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 2.0 Ica rel - Relative Collector Current ICEO - Collector Dark Current (nA) 104 103 VCE = 20 V 102 101 10 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 20 94 8304 40 60 80 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Current vs. Ambient Temperature Rev. 1.7, 04-Aug-14 0 100 94 8239 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 3 - Relative Collector Current vs. Ambient Temperature Document Number: 81549 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEFT4300 www.vishay.com Vishay Semiconductors 8 ton/toff - Turn-on/Turn-off Time (µs) Ica- Collector Light Current (mA) 10 1 V CE = 5 V λ = 950 nm 0.1 0.01 0.01 4 toff 2 ton 0 0.1 0 10 1 Ee - Irradiance(mW/cm 2) 94 8302 VCE = 5 V RL = 100 Ω λ = 950 nm 6 Fig. 4 - Collector Light Current vs. Irradiance 2 4 6 8 10 12 14 IC - Collector Current (mA) 94 8293 Fig. 7 - Turn-on/Turn-off Time vs. Collector Current S(λ)rel - Relative Spectral Sensitivity λ = 950 nm Ee = 1 mW/cm 2 0.5 mW/cm 2 1 0.2 mW/cm 2 0.1 mW/cm 2 0.05 mW/cm 2 0.1 0.1 1 10 0.6 0.4 0.2 0 800 900 Fig. 8 - Relative Spectral Sensitivity vs. Wavelength 0° 10 Srel - Relative Radiant Sensitivity f = 1 MHz 6 4 2 94 8294 1 10 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 100 VCE - Collector Emitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage Rev. 1.7, 04-Aug-14 10° 30° 8 0 0.1 1100 1000 λ - Wavelength (nm) 94 8306 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage CCEO - Collector Emitter Capacitance (pF) 0.8 100 V CE - Collector Ermitter Voltage (V) 94 8305 1.0 ϕ - Angular Displacement Ica - Collector Light Current (mA) 10 80° 0.6 0.4 0.2 0 94 8303 Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement Document Number: 81549 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEFT4300 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 3.2 ± 0.1 C CHIP POSITION Ø 3 ± 0.1 AREA NOT PLANE 5.8 ± 0.3 34.4 ± 0.5 < 0.6 (2.5) 3.5 ± 0.1 4.5 ± 0.3 3.9 ± 0.15 E 2.54 nom. 1.5 ± 0.5 + 0.15 + 0.2 0.5 - 0.1 0.4 - 0.05 technical drawings according to DIN specifications Drawing-No.: 6.544-5269.01-4 Issue: 6; 28.07.14 Rev. 1.7, 04-Aug-14 Document Number: 81549 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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