TEST2600 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions (L x W x H in mm): 3.6 x 2.2 x 3.4 • High radiant sensitivity • Daylight blocking filter matches with 940 nm emitters • Fast response times • Angle of half sensitivity: ϕ1 = ± 30°, horizontal 94 8673 • Package matches with IR emitter series TSSS2600 • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION TEST2600 is a silicon NPN phototransistor with high radiant sensitivity in black, miniature, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. with APPLICATIONS • Optical switches • Counters and sorters • Interrupters • Tape and card readers • Encoders • Position sensors PRODUCT SUMMARY Ica (mA) ϕ (deg) λ0.5 (nm) 2.5 ± 30 850 to 980 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 5000 pcs, 5000 pcs/bulk Side view COMPONENT TEST2600 Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TEST2600 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Collector emitter voltage TEST CONDITION VCEO 70 V Emitter collector voltage VECO 5 V Collector current UNIT IC 50 mA Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Total power dissipation Tamb ≤ 55 °C PV 100 mW Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C t ≤ 3 s, 2 mm frpm case Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 450 K/W Junction temperature Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81562 Rev. 1.7, 08-Sep-08 For technical questions, contact: [email protected] www.vishay.com 517 TEST2600 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant PV - Power Dissipation (mW) 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 20907 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 70 TYP. MAX. UNIT VCE = 20 V, E = 0 ICEO 1 100 nA Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 6 pF Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V Collector light current Ica 2.5 mA horizontal ϕ1 ± 30 deg vertical ϕ2 ± 60 deg λp 920 nm λ0.5 850 to 980 nm Collector emitter breakdown voltage Collector emitter dark current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VCEsat V 1 0.3 V Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω ton 6 µs Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 5 µs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 110 kHz Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 2.0 Ica rel - Relative Collector Current ICEO - Collector Dark Current (nA) 104 103 VCE = 10 V 102 101 10 20 94 8249 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Current vs. Ambient Temperature www.vishay.com 518 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 94 8239 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 3 - Relative Collector Current vs. Ambient Temperature For technical questions, contact: [email protected] Document Number: 81562 Rev. 1.7, 08-Sep-08 TEST2600 Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 12 ton/toff - Turn-on/Turn-off Time (µs) Ica - Collector Light Current (mA) 10 1 0.1 V CE = 5V λ = 950nm 0.01 0.01 0.1 1 Ee - Irradiance 94 8268 λ = 950nm Ee =1mW/cm2 0.5 mW/cm2 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 11 0 4 12 8 16 IC - Collector Current (mA) Fig. 7 - Turn-on/Turn-off Time vs. Collector Current 1.0 0.8 0.6 0.4 0.2 0 700 800 900 1100 1000 λ - Wavelength (nm) Fig. 8 - Relative Spectral Sensitivity vs. Wavelength 0° 20 10° 20° 30° f = 1 MHz 16 Srel - Relative Sensitivity CCEO - Collector Ermitter Capacitance (pF) 0 94 8270 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage 12 8 4 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0 0.1 94 8247 toff 2 100 V CE - Collector Ermitter (V) 94 8269 ton 4 0 S ( λ) rel - Relative Spectral Sensitivity Ica - Collector Light Current (mA) 10 0.1 0.1 6 94 8253 Fig. 4 - Collector Light Current vs. Irradiance 1 8 10 (mW/cm2 ) VCE = 5 V RL = 100 Ω λ = 950 nm 10 1 10 100 VCE - Collector Ermitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage Document Number: 81562 Rev. 1.7, 08-Sep-08 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8273 Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement For technical questions, contact: [email protected] www.vishay.com 519 TEST2600 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 0° 10° 20° Srel - Relative Sensitivity 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 0.2 0.6 0.4 94 8274 Fig. 10 - Relative Radiant Sensitivity vs. Angular Displacement 0.5 1.2 nom. < 0.7 3.4 Area not plane Detector center ± 0.5 6.9 ± 0.3 ± 0.3 0.3 - 0.1 0.3 + 0.1 - 0.1 PACKAGE DIMENSIONS in millimeters 28.9 3.6 ± 0.15 0.65 E + 0.1 - 0.15 1.8 ± 0.15 2.2 ± 0.15 C 0.5 + 0.2 - 0.1 0.4 ± 0.15 0.4 + 0.15 0.3 .75 R0 60° 0.6 x 45° 2.54 nom. technical drawings according to DIN specifications Drawing-No.: 6.544-5242.01-4 Issue: 3; 18.04.96 95 11487 www.vishay.com 520 For technical questions, contact: [email protected] Document Number: 81562 Rev. 1.7, 08-Sep-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000