VO4254, VO4256 www.vishay.com Vishay Semiconductors Optocoupler, Phototriac Output, High dV/dt, Low Input Current FEATURES A 1 6 MT2 C 2 5 NC • High static dV/dt 5 kV/μs • High input sensitivity 1.6 mA, 2 mA, and 3 mA • 400 V and 600 V blocking voltage • 300 mA on-state current 4 MT1 NC 3 • Isolation test voltage 5300 VRMS i179035_3 V D E 21842-1 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VO4254 and VO4256 phototriac consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC packaged in a DIP-6 package. APPLICATIONS • Solid-state relays • Industrial controls High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of 1.6 mA for bin D, 2 mA for bin H, and 3 mA for bin M. • Office equipment • Consumer appliances AGENCY APPROVALS The new non zero phototriac family use a proprietary dV/dt clamp resulting in a static dV/dt of greater than 5 kV/μs. • UL1577, file no. E52744 system code H or J, double protection The VO4254 and VO4256 phototriac isolates low-voltage logic from 120 VAC, 240 VAC, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays. • cUL - file no. E52744, equivalent to CSA bulletin 5A • DIN EN 60747-5-5 (VDE 0884) available with option 1 • FIMKO: FI25250 ORDERING INFORMATION V O 4 2 5 # X - PART NUMBER X 0 0 # PACKAGE OPTION DIP-6 Option 6 7.62 mm 10.16 mm T TAPE AND REEL Option 7 > 0.7 mm VDRM 400 AGENCY CERTIFIED/PACKAGE UL, cUL, FIMKO DIP-6 DIP-6, 400 mil, option 6 SMD-6, option 7 UL, cUL, FIMKO, VDE DIP-6 Rev. 1.7, 13-Apr-12 VDRM 600 TRIGGER CURRENT, IFT (mA) 1.6 2 3 1.6 2 3 VO4254D VO4254H VO4254M VO4256D VO4256H VO4256M VO4254D-X006 VO4254H-X006 VO4254M-X006 VO4256D-X006 VO4256H-X006 VO4256M-X006 VO4254D-X007T VO4254H-X007T VO4254M-X007T VO4256D-X007T VO4256H-X007T VO4256M-X007T 1.6 2 3 1.6 2 3 - - - VO4256D-X001 - - Document Number: 84798 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4254, VO4256 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Power dissipation Pdiss Derate from 25 °C 100 mW 1.33 mW/°C V OUTPUT VO4254D/H/M VDRM 400 VO4256D/H/M VDRM 600 V ITM 300 mA Pdiss 500 mW 6.6 mW/°C VISO 5300 VRMS Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Tsld 260 °C Peak off-state voltage RMS on-state current Power dissipation Derate from 25 °C COUPLER Isolation test voltage (between emitter and detector, climate per DIN 500414, part 2, Nov. 74) t=1s max. 10 s dip soldering 0.5 mm from case bottom Soldering temperature (2) Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). 350 IL - Load Current (mA) 300 250 IF = 3 mA to 10 mA 200 150 100 50 0 - 40 - 20 19623 0 20 40 60 80 100 Tamb - Temperature (°C) Fig. 1 - Recommended Operating Condition Rev. 1.7, 13-Apr-12 Document Number: 84798 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4254, VO4256 www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT LED power dissipation Pdiss 100 mW Output power dissipation Pdiss 500 mW Maximum LED junction temperature Tjmax. 125 °C Maximum output die junction temperature Tjmax. 125 °C Thermal resistance, junction emitter to board JEB 150 °C/W Thermal resistance, junction emitter to case JEC 139 °C/W Thermal resistance, junction detector to board Thermal resistance, junction detector to case Thermal resistance, junction emitter to junction detector JDB 78 °C/W JDC 103 °C/W JED 496 °C/W TA θCA Package TC θEC θDC θDE TJD TJE θDB θEB TB θBA 19996 Thermal resistance, case to ambient CA 3563 °C/W TA Note • The thermal characteristics table above were measured at 25 °C and the thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers application note. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF 1.2 1.4 V Reverse current VR = 6 V IR 0.1 10 μA VF = 0 V, f = 1 MHz CI 40 Input capacitance pF OUTPUT Repetitive peak off-state voltage Off-state current On-state voltage On-current Critical rate of rise of off-state voltage IDRM = 100 μA VO4254D/H/M VDRM 400 VO4256D/H/M VDRM 600 VD = VDRM IDRM V V 100 μA IT = 300 mA VTM 3 V PF = 1, VT(RMS) = 1.7 V ITM 300 mA VD = 0.67 VDRM, TJ = 25 °C dV/dtcr 5000 V/μs COUPLER LED trigger current, current required to latch output VD = 3 V VO4254D IFT 1.6 mA VO4254H IFT 2 mA VO4254M IFT 3 mA VO4256D IFT 1.6 mA VO4256H IFT 2 mA 3 mA VO4256M Capacitance (input to output) f = 1 MHz, VIO = 0 V IFT CIO 0.8 pF Note • Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 1.7, 13-Apr-12 Document Number: 84798 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4254, VO4256 www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. Climatic classification (according to IEC68 part 1) TYP. MAX. UNIT 55/100/21 Pollution degree (DIN VDE 0109) 2 Comparative tracking index per DIN IEC112/VDE 0303 part 1, group IIIa per DIN VDE 6110 175 399 175 399 VIOTM VIOTM 8000 V VIORM VIORM 890 V PSO PSO 500 mW ISI ISI 250 mA TSI TSI 175 °C Creepage distance 7 mm Clearance distance 7 mm TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 IDRM - Leakage Current (nA) 1.5 VF (V) 1.3 1.1 0 °C 25 °C 50 °C 0.9 100 10 IDRM at 630 V 0.7 0.1 1.0 10.0 100.0 IF (mA) 19660 1 - 60 - 40 - 20 19682 Fig. 2 - Diode Forward Voltage vs. Forward Current 38 36 34 IR = 10 µA 32 - 60 - 40 - 20 0 20 40 60 ITM - On-State Current (mA) VR (V) 40 60 80 100 1000 40 100 0 °C 10 25 °C 85 °C 1 80 100 Temperature (ºC) Fig. 3 - Diode Reverse Voltage vs. Temperature Rev. 1.7, 13-Apr-12 20 Fig. 4 - Leakage Current vs. Ambient Temperature 42 19662 0 TA - Ambient Temperature (°C) 19683 0 1 IF = 2 mA 2 3 VTM - On-State Voltage (V) Fig. 5 - On-State Current vs. On-State Voltage Document Number: 84798 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4254, VO4256 www.vishay.com Vishay Semiconductors 1.4 Output Leakage current (pA) 80 70 Normalized IH 60 50 40 30 25 °C 20 10 0 °C 400 800 600 Voltage (V) 19684 0.8 0.6 0.4 0.0 - 60 - 40 - 20 - 10 200 1.0 0.2 0 0 0 20 40 60 80 100 Temperature (ºC) 20014 Fig. 6 - Output Off Current (Leakage) vs. Voltage Fig. 9 - Normalized IH vs. Temperature 1.8 1.4 1.2 1.0 0.8 0.6 0.4 Normalized IFT at 25 ºC 0.2 0.0 - 60 - 40 - 20 8 6 85 ºC 100 ºC 4 2 - 40 ºC 25 ºC 0 0 20 40 60 80 100 Temperature (ºC) 19666 IFT - Trigger Current (mA) 10 1.6 Normalized IFT Normalized IH at 25 °C 1.2 85 °C 10 20015 Fig. 7 - Normalized Trigger Input Current vs. Temperature 20 30 40 50 60 70 Trigger Pulse Width (µs) Fig. 10 - IFT vs. LED Pulse Width 3.5 3.0 IFT (mA) 2.5 2.0 1.5 1.0 0.5 0.0 10 100 1000 Turn-On Time (µs) 20013 Fig. 8 - IFT vs. Turn-On Time (μs) Rev. 1.7, 13-Apr-12 Document Number: 84798 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4254, VO4256 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 3 2 1 4 5 6 Pin one ID 6.30 6.50 ISO method A 8.50 8.70 7.62 typ. 1.22 1.32 1 min. 3.30 3.81 4° typ. 18° 3.30 3.81 0.84 typ. 0.46 0.51 3° to 9° 0.20 0.30 0.84 typ. 7.62 to 8.81 2.54 typ. i178014 Option 6 Option 7 7.62 typ. 7.62 typ. 0.7 min. 3.5 ± 0.3 4.3 ± 0.3 0.1 min. 8 min. 2.55 ± 0.25 0.6 min. 10.3 max. 0.76 2.54 10.16 typ. 20802-18 1.52 8 min. 11.05 1.78 R 0.25 PACKAGE MARKING (example) VO4254 X017 V YWW H 68 Note • VDE logo is only marked on option 1 parts. Tape and reel suffix (T) is not part of the package marking. Rev. 1.7, 13-Apr-12 Document Number: 84798 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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