VO4157, VO4158 www.vishay.com Vishay Semiconductors Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current FEATURES A 1 6 MT2 • High static dV/dt 5 kV/μs C 2 5 NC • High input sensitivity IFT = 1.6 mA, 2 mA, and 3 mA ZCC* NC 3 • 300 mA on-state current 4 MT1 • Zero voltage crossing detector *Zero crossing circuit i179030_4 21842-1 • 700 V and 800 V blocking voltage V D E • Isolation test voltage 5300 VRMS DESCRIPTION • Compliant to RoHS Directive 2011/65/EU The VO4157 and VO4158 consists of a GaAs IRLED optically coupled to a photosensitive zero crossing TRIAC packaged in a DIP-6 package. APPLICATIONS High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of 1.6 mA for bin D, 2 mA for bin H, and 3 mA for bin M. • Industrial controls The new phototriac zero crossing family uses a proprietary dV/dt clamp resulting in a static dV/dt of greater than 5 kV/μs. AGENCY APPROVALS The VO4157 and VO4158 isolates low-voltage logic from 120 VAC, 240 VAC, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays. • cUL - file no. E52744, equivalent to CSA bulletin 5A • Solid-state relays • Office equipment • Consumer appliances • UL1577, file no. E52744 system code H or J, double protection • DIN EN 60747-5-2 (VDE 0884) available with option 1 • FIMKO ORDERING INFORMATION DIP-6 V O 4 1 5 # X - PART NUMBER X 0 # # PACKAGE OPTION Option 6 T TAPE AND REEL 7.62 mm Option 7 10.16 mm Option 8 9.27 mm > 0.7 mm VDRM 700 AGENCY CERTIFIED/PACKAGE UL, cUL VDRM 800 TRIGGER CURRENT, IFT (mA) 1.6 2 3 1.6 2 3 VO4157D VO4157H VO4157M VO4158D VO4158H VO4158M DIP-6, 400 mil, option 6 VO4157D-X006 VO4157H-X006 VO4157M-X006 VO4158D-X006 VO4158H-X006 VO4158M-X006 SMD-6, option 7 VO4157D-X007T VO4157H-X007T VO4157M-X007T VO4158D-X007T VO4158H-X007T VO4158M-X007T DIP-6 1.6 2 3 1.6 2 DIP-6 VDE, UL, cUL - - VO4157M-X001 - - - DIP-6, 400 mil, option 6 - - - - - VO4158M-X016 - VO4158H-X017T - - - VO4158M-X018T SMD-6, option 7 SMD-6, option 8 Rev. 1.8, 14-Feb-12 VO4157D-X017T VO4157H-X017T VO4157M-X017T - - - 3 Document Number: 84634 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4157, VO4158 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Surge current IFSM Derate from 25 °C 2.5 A 1.33 mW/°C V OUTPUT Peak off-state voltage RMS on-state current VO4157D/H/M VDRM 700 VO4158D/H/M VDRM 800 V ITM 300 mA 6.6 mW/°C VISO 5300 VRMS Tstg - 55 to + 150 °C Tamb - 55 to + 100 °C Tsld 260 °C Derate from 25 °C COUPLER Isolation test voltage (between emitter and detector, climate per DIN 500414, part 2, Nov. 74) t = 1 min Storage temperature range Ambient temperature range max. ≤ 10 s dip soldering ≥ 0.5 mm from case bottom Soldering temperature Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. This phototriac should not be used to drive a load directly. It is intended to be a trigger device only. 350 IL - Load Current (mA) 300 250 IF = 3 mA to 10 mA 200 150 100 50 0 - 40 - 20 19623 0 20 40 60 80 100 Tamb - Temperature (°C) Fig. 1 - Recommended Operating Condition Rev. 1.8, 14-Feb-12 Document Number: 84634 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4157, VO4158 www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT LED power dissipation Pdiss 100 mW Output power dissipation Pdiss 500 mW Total power dissipation Ptot 600 mW Maximum LED junction temperature Tjmax. 125 °C Maximum output die junction temperature Tjmax. 125 °C Thermal resistance, junction emitter to board θJEB 150 °C/W Thermal resistance, junction emitter to case θJEC 139 °C/W Thermal resistance, junction detector to board θJDB 78 °C/W Thermal resistance, junction detector to case θJDC 103 °C/W Thermal resistance, junction emitter to junction detector θJED 496 °C/W Thermal resistance, case to ambient θCA TA θCA Package TC θEC θDC θDE TJD TJE θDB θEB TB θBA 19996 3563 TA °C/W Note • The thermal characteristics table above were measured at 25 °C and the thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers application note. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF 1.2 1.4 V Reverse current VR = 6 V IR 0.1 10 μA VF = 0 V, f = 1 MHz CI 25 Input capacitance pF OUTPUT Repetitive peak off-state voltage Off-state current IDRM = 100 μA VO4157D/H/M VDRM 700 VO4158D/H/M VDRM 800 V V VD = VDRM, IF = 0 IDRM On-state voltage IT = 300 mA VTM 3 V On-state current PF = 1, VT(RMS) = 1.7 V ITM 300 mA IF = 2 mA, VDRM IDINH 200 μA IH 500 μA IF = rated IFT VIH 20 VD = 0.67 VDRM, TJ = 25 °C dV/dtcr Off-state current in inhibit state Holding current Zero cross inhibit voltage Critical rate of rise of off-state voltage 100 5000 μA V V/μs COUPLER VO4157D LED trigger current, current required to latch output VD = 3 V Capacitance (input to output) f = 1 MHz, VIO = 0 V 1.6 mA VO4157H IFT 2 mA VO4157M IFT 3 mA VO4158D IFT 1.6 mA VO4158H IFT 2 mA 3 mA VO4158M Common mode coupling capacitance IFT IFT CCM 0.01 pF CIO 0.8 pF Note • Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Rev. 1.8, 14-Feb-12 Document Number: 84634 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4157, VO4158 www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. Climatic classification (according to IEC68 part 1) MAX. UNIT 55/100/21 Pollution degree (DIN VDE 0109) 2 Comparative tracking index per DIN IEC112/VDE 0303 part 1, group IIIa per DIN VDE 6110 175 399 175 399 VIOTM VIOTM 8000 V VIORM VIORM 890 V PSO PSO 500 mW ISI ISI 250 mA TSI TSI 175 Creepage distance 7 °C mm TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 IDRM - Leakage Current (nA) 1.5 VF (V) 1.3 1.1 0.9 0.7 0.1 0 °C 25 °C 50 °C 1.0 10.0 1000 100 10 IDRM at 800 V 1 - 60 - 40 - 20 100.0 IF (mA) 19997 38 36 34 IR = 10 µA 32 - 60 - 40 - 20 ITM - On-State Current (mA) VR (V) 60 80 100 1000 40 100 0 °C 10 25 °C 85 °C IF = 2 mA 1 0 20 40 60 80 100 Temperature (ºC) Fig. 3 - Diode Reverse Voltage vs. Temperature Rev. 1.8, 14-Feb-12 40 Fig. 4 - Leakage Current vs. Ambient Temperature 42 19551 20 TA - Ambient Temperature (°C) 19592 Fig. 2 - Diode Forward Voltage vs. Forward Current 0 1 19541 2 3 4 VTM - On-State Voltage (V) Fig. 5 - On State Current vs. On State Voltage Document Number: 84634 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4157, VO4158 Vishay Semiconductors 5500 1.6 5000 1.4 4500 85 °C 25 °C 4000 3500 0 °C 3000 2500 1.0 0.8 0.6 0.4 2000 0.2 1500 0.0 - 60 - 40 - 20 1000 0 100 200 300 400 500 600 700 800 900 Applied Voltage(V) 19453 16 IFT - Trigger Current (mA) 18 1.6 Normalized IFT at 25 °C 1.2 1.0 0.8 0.6 0.4 0.2 0.0 - 55 - 35 - 15 5 25 45 65 60 80 100 12 10 85 ºC 100 ºC 8 6 4 - 40 ºC 2 25 ºC 0 10 20 30 40 50 60 70 Trigger Pulse Width (µs) 20005 Fig. 10 - IFT vs. LED Pulse Width Fig. 7 - Normalized Trigger Input Current vs. Temperature 3.5 3.5 3.0 3.0 2.5 2.5 100 °C IFT (mA) IFT (mA) 40 14 85 100 TA - Ambient Temperature (°C) 19454 20 Fig. 9 - Normalized Holding Current vs. Temperature 1.8 1.4 0 Temperature (ºC) 19998 Fig. 6 - Output Off Current (Leakage) vs. Voltage IFT - Normalized Normalized IH at 25 °C 1.2 Normalized IH Leakage Current (nA) www.vishay.com 2.0 1.5 85 °C 2.0 25 °C 1.5 1.0 1.0 0.5 0.5 50 °C 0.0 0.0 10 19624 100 1000 Turn-On Time (µs) Fig. 8 - Trigger Current vs. Turn-On Time Rev. 1.8, 14-Feb-12 0 21614 50 100 150 200 250 300 350 VRMS (V) Fig. 11 - IFT vs. VRMS and Temperature Document Number: 84634 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4157, VO4158 www.vishay.com Vishay Semiconductors POWER FACTOR CONSIDERATIONS As a zero voltage crossing optotriac, the commutating dV/dt spikes can inhibit one half of the TRIAC from turning on. If the spike potential exceeds the inhibit voltage of the zero-cross detection circuit, half of the TRIAC will be held-off and not turn-on. This hold-off condition can be eliminated by using a capacitor or RC snubber placed directly across the power triac as shown in fig. 11. Note that the value of the capacitor increases as a function of the load current. R1 360 1 Hot 6 Control 2 5 3 4 U1 220/240 VAC RS ZC CS RG 330 Inductive load Nutral 21609-1 Fig. 12 - Basic Power Triac Driver Circuit The hold-off condition also can be eliminated by providing a higher level of LED drive current. The higher LED drive provides a larger photocurrent which causes the phototransistor to turn-on before the commutating spike has activated the zero-cross detection circuit. For example, if a device requires 1.5 mA for a resistive load, then 2.7 mA (1.8 times) may be required to control an inductive load whose power factor is less than 0.3. PACKAGE DIMENSIONS in millimeters 3 2 1 4 5 6 Pin one ID 6.30 6.50 ISO method A 8.50 8.70 7.62 typ. 1.22 1.32 1 min. 3.30 3.81 4° typ. 18° 3.30 3.81 0.84 typ. 0.46 0.51 3° to 9° 0.20 0.30 0.84 typ. 7.62 to 8.81 2.54 typ. i178014 Option 6 Option 7 Option 8 7.62 typ. 7.62 typ. 7.62 typ. 3.5 ± 0.3 0.7 min. 4.3 ± 0.3 0.25 ± 0.1 3.5 ± 0.3 0.1 min. 8 min. 2.55 ± 0.25 9.27 min. 0.6 min. 10.3 max. 12.1 max. 10.16 typ. 0.76 2.54 R 0.25 0.76 2.54 R 0.25 1.78 20802-41 Rev. 1.8, 14-Feb-12 8 min. 11.05 1.52 1.78 8 min. 11.05 1.52 Document Number: 84634 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4157, VO4158 www.vishay.com Vishay Semiconductors PACKAGE MARKING (example) VO4157 X017 V YWW H 68 Notes • VDE logo is only marked on option 1 parts. Tape and reel suffix (T) is not part of the package marking. Rev. 1.8, 14-Feb-12 Document Number: 84634 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000