New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 3 1 1 V20120SG 2 3 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) VF20120SG PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 TO-263AB PIN 2 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TO-262AA TYPICAL APPLICATIONS K K For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. A NC 1 VB20120SG NC 3 MECHANICAL DATA VI20120SG K HEATSINK A 2 PIN 1 PIN 2 PIN 3 K Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 120 V IFSM 150 A VF at IF = 20 A 0.78 V TJ max. 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20120SG VF20120SG VB20120SG VI20120SG UNIT Maximum repetitive peak reverse voltage VRRM 120 V Maximum average forward rectified current (fig. 1) IF(AV) 20 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH EAS 80 mJ Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/µs Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V TJ, TSTG - 40 to + 150 °C Operating junction and storage temperature range Document Number: 88994 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage Instantaneous forward voltage (1) Reverse current IR = 1.0 mA TA = 25 °C IF = 5 A IF = 10 A IF = 20 A TA = 25 °C SYMBOL TYP. MAX. VBR 120 (minimum) - 0.62 0.81 1.20 1.33 UNIT V VF IF = 5 A IF = 10 A IF = 20 A TA = 125 °C 0.54 0.65 0.78 0.88 VR = 90 V TA = 25 °C TA = 125 °C 10 7 - µA mA VR = 120 V TA = 25 °C TA = 125 °C 12 250 25 µA mA (2) IR Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20120SG VF20120SG VB20120SG VI20120SG UNIT RθJC 2.2 4.2 2.2 2.2 °C/W Typical thermal resistance ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20120SG-E3/4W PREFERRED P/N 1.88 4W 50/tube Tube ITO-220AB VF20120SG-E3/4W 1.75 4W 50/tube Tube TO-263AB VB20120SG-E3/4W 1.38 4W 50/tube Tube TO-263AB VB20120SG-E3/8W 1.38 8W 800/reel Tape and reel 4W 50/tube Tube TO-262AA VI20120SG-E3/4W 1.45 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 35 25 Average Power Loss (W) Average Forward Current (A) 30 20 V(B,I)20120SG 15 D = 0.8 D = 0.5 Resistive or Inductive Load VF20120SG 10 5 D = 0.3 D = 0.2 25 D = 1.0 20 D = 0.1 15 T 10 5 Mounted on Specific Heatsink 0 D = tp/T tp 16 20 0 0 25 50 75 100 125 150 175 0 4 8 12 24 Case Temperature (°C) Average Forward Current (A) Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88994 Revision: 24-Jun-09 New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V(B,I)20120SG 1 0.01 1.6 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Figure 6. Typical Transient Thermal Impedance 100 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) Junction to Case TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 10 20 30 40 50 60 70 80 90 100 Junction to Case 1 VF20120SG 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 7. Typical Transient Thermal Impedance Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Document Number: 88994 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) PIN 2 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 3 7° REF. 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 7° REF. 0.076 (1.93) REF. 45° REF. 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-262AA 0.185 (4.70) 0.175 (4.44) 0.411 (10.45) MAX. 0.250 (6.35) MIN. 30° (TYP.) (REF.) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) K 0.950 (24.13) 0.920 (23.37) 1 PIN 2 0.510 (12.95) 0.470 (11.94) 0.401 (10.19) 0.381 (9.68) 0.350 (8.89) 0.330 (8.38) 3 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.104 (2.65) 0.096 (2.45) 0.035 (0.90) 0.028 (0.70) 0.022 (0.56) 0.014 (0.35) 0.205 (5.20) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) NC K A 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88994 Revision: 24-Jun-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1