Single N-channel MOSFET ELM14468AA-N ■General description ■Features ELM14468AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=11.6A (Vgs=10V) Rds(on) < 14mΩ (Vgs=10V) Rds(on) < 22mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 30 V ±20 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current Pulsed drain current 11.6 Id 9.2 50 Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg 3.1 A 1 A 2 W 2.0 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 31 Max. 40 Unit °C/W 59 16 75 24 °C/W °C/W Note 1 3 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 Pin name SOURCE 2 3 4 SOURCE SOURCE GATE 5 6 DRAIN DRAIN 7 DRAIN 8 DRAIN 4-1 D G S Single N-channel MOSFET ELM14468AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V ±100 nA 2.0 3.0 V A 11.0 14.0 17.0 21.0 Vgs=4.5V, Id=10A Vds=5V, Id=11.6A 17.4 19 22.0 mΩ S Is=1A, Vgs=0V 0.73 1.00 4.5 V A 1200 Vgs=0V, Vds=15V, f=1MHz 955 145 pF pF Vgs=0V, Vds=0V, f=1MHz 112 0.50 0.85 pF Ω 17.0 24.0 nC 9.0 12.0 nC Vds=24V Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=10mA Id(on) Vgs=4.5V, Vds=5V Static drain-source on-resistance Vgs=10V Rds(on) Id=11.6A Gfs Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Crss Rg Total gate charge (4.5V) Qg Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd Body diode reverse recovery time Body diode reverse recovery charge V μA Idss Forward transconductance 30 1.000 5.000 Zero gate voltage drain current Turn-on rise time Turn-off delay time Turn-off fall time Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit 0.003 Ta=55°C 1.5 50 Ta=125°C Qg Vgs=10V, Vds=15V, Id=11.6A 3.4 4.7 mΩ nC nC td(on) 5.0 6.5 ns tr Vgs=10V, Vds=15V td(off) RL=1.3Ω, Rgen=3Ω 6.0 19.0 7.5 25.0 ns ns 4.5 19 9 6.0 21 12 ns ns nC tf trr Qrr If=11.6A, dIf/dt=100A/μs If=11.6A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single N-channel MOSFET AO4468 ELM14468AA-N ■Typical electrical and thermal characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 35 10V 6V 60 4.5V 50 25 40 Id(A) Id (A) Vds=5V 30 VDS=VGS ID=1mA 30 25°C 5 10 0 0 0 1 2 3 1.5 4 2 25 800 140 80 0.5 Normalized On-Resistance 1.8 20 2.5 3 3.5 1.6 Vgs=4.5V 15 7 1.4 15 10 Vgs=10V 5 5 10 15 4.5 220 140 Vgs=10V Id=11.6A Vgs=4.5V Id=10A 1.2 0 4 Vgs(Volts) Figure 2: Transfer Characteristics Vds (Volts) Fig 1: On-Region Characteristics Rds(on) (m�) 125°C1.8 1.4 50 15 10 Vgs=3.5V 20 20 1 0.8 20 0 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 Id=11.6A 1.0E+00 1.0E-01 Is (A) Rds(on) (m�) 40 30 125°C 1.0E-02 125°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR25°C USES AS CRITICAL 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISI OUT OF20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25°C 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE 1.0E-05 10 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.0 Single N-channel MOSFET AO4468 ELM14468AA-N TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1250 Capacitance (pF) 8 Vgs (Volts) 1500 Vds=15V Id=11.6A 6 VDS=VGS ID=1mA 4 2 Ciss 1000 750 1.4 50 500 1.8 Coss 250 0 0 4 8 12 16 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 Vds (Volts) Figure 8: Capacitance Characteristics 1ms 100�s 0.1s 1.0 1s Tj(max)=150°C Ta=25°C DC 1 0.1 10 Tj(max)=150°C Ta=25°C 15 7 30 20 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) 100 Vds (Volts) D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=40°C/W 220 140 0 0.0001 0.001 Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 30 10 10s 0.1 10 800 140 80 0.5 40 Power (W) Id (Amps) 10�s Rds(on) limited 10ms Z�ja Normalized Transient Thermal Resistance 5 50 100.0 10.0 Crss 0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL Pd COMPONENTS NOT ASSUME ANY LIABILITY ARISI 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 Alpha & Omega Semiconductor, Ltd. 100 1000