Single P-channel MOSFET ELM14409AA-N ■General description ■Features ELM14409AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-15A (Vgs=-10V) Rds(on) < 7.5mΩ (Vgs=-10V) Rds(on) < 12mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V ±20 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current Pulsed drain current -15.0 -12.8 -80 Id Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg 3.0 2.1 -55 to 150 A 1 A 2 W 1 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Symbol t≤10s Steady-state Rθja Maximum junction-to-lead Steady-state Rθjl ■Pin configuration Typ. 26 50 Max. 40 75 Unit °C/W °C/W Note 14 24 °C/W 3 1 ■Circuit SOP-8(TOP VIEW) Pin No. Pin name 1 2 3 SOURCE SOURCE SOURCE 1 8 2 7 3 6 4 5 GATE DRAIN 4 5 6 DRAIN 7 8 DRAIN DRAIN 4-1 D G S Single P-channel MOSFET ELM14409AA-N ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-24V Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vgs=-10V Rds(on) Id=-15A Ta=125°C Vgs=-4.5V, Id=-10A Gfs Vds=-5V, Id=-15A Vsd -5 -25 μA ±100 nA Is=-1A, Vgs=0V -1.4 -80 -1.9 -2.7 V A 6.2 7.5 8.2 9.5 50 11.5 12.0 35 -0.71 -1.00 V -5 A 6400 pF pF Is Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Crss Rg Qg Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge V Ta=55°C Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Input capacitance Output capacitance Total gate charge (4.5V) Gate-source charge -30 Vgs=0V, Vds=-15V, f=1MHz 5270 945 Vgs=0V, Vds=0V, f=1MHz 745 2 Vgs=-10V, Vds=-15V Id=-15A Vgs=-10V, Vds=-15V td(off) RL=1Ω, Rgen=3Ω tf trr If=-15A, dIf/dt=100A/μs Qrr If=-15A, dIf/dt=100A/μs NOTE : 100.0 51.5 14.5 3 120.0 mΩ mΩ S pF Ω nC nC nC 23.0 14.0 nC ns 16.5 ns 76.5 37.5 36.7 ns ns ns 28.0 45.0 nC 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single P-channel MOSFET ELM14409AA-N ■Typical electrical and thermal characteristics 60 60 -10V 50 -6V -4.5V -3.5V 40 -4V -Id(A) -Id (A) 40 Vds=-5V 50 30 30 20 20 Vgs=-3V 10 125°C 10 25°C 0 0 1 2 3 4 5 0 -Vds (Volts) Fig 1: On-Region Characteristics 1 10 1.5 2.5 3 3.5 -Vgs(Volts) Figure 2: Transfer Characteristics 4 1.6 Id=-15A Normalized On-Resistance Vgs=-4.5V 8 Rds(on) (m� ) 2 Vgs=-10V 6 4 1.4 Vgs=-10V Vgs=-4.5V 1.2 1 0.8 0 2 5 10 -Id (A) 15 20 25 Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 20 1.0E+02 Id=-15A 16 1.0E+01 Vgs=0V 1.0E+00 12 -Is (A) Rds(on) (m� ) 25 125°C 125°C 1.0E-01 1.0E-02 8 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 25°C 1.0E-03 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25°C 4 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0 0 2 4 6 8 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics 4-3 1.2 Single P-channel MOSFET ELM14409AA-N 10 8 7000 6000 Capacitance (pF) -Vgs (Volts) 8000 Vds=-15V Id=-15A 6 4 Ciss 5000 4000 3000 Coss 2000 2 1000 0 0 100.0 20 40 60 80 100 -Qg (nC) Figure 7: Gate-Charge Characteristics Rds(on) limited 100�s 120 0 Power (W) -Id (Amps) 10ms 1s DC 1 10 100 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z�ja Normalized Transient Thermal Resistance 10 30 Tj(max)=150°C Ta=25°C 60 40 0 0.001 0.1 0.1 15 20 25 -Vds (Volts) Figure 8: Capacitance Characteristics 20 10s Tj(max)=150°C Ta=25°C 10 80 0.1s 1.0 5 100 10�s 1ms 10.0 Crss 0 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL Pd COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.1 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 1 10 Pulse 0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000