Single N-channel MOSFET ELM53404CA-S ■General description ■Features ELM53404CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • ■Maximum absolute ratings Parameter Drain-source voltage Symbol Vds Gate-source voltage Vgs Ta=25°C Continuous drain current(Tj=150°C) Vds=30V Id=3.6A Rds(on) < 82mΩ (Vgs=10V) Rds(on) < 108mΩ (Vgs=4.5V) Ta=25°C. Unless otherwise noted. Limit Unit 30 V ±20 3.6 Id Ta=70°C Pulsed drain current Tc=25°C Tc=70°C A 1.25 0.80 - 55 to 150 Pd Junction and storage temperature range A 2.0 10 Idm Power dissipation V Tj, Tstg W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 120 ■Circuit D SOT-23(TOP VIEW) 3 1 2 Unit °C/W Pin No. Pin name 1 2 GATE SOURCE 3 DRAIN G S 4- 1 Single N-channel MOSFET ELM53404CA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=30V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Static drain-source on-resistance Rds(on) Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Gfs Vsd 30 V Ta=85°C 1.0 30 ±100 nA 2.5 V A 72 82 mΩ Vgs=4.5V, Id=2.0A Vds=10V, Id=6.1A Is=1.7A, Vgs=0V 95 20 0.8 108 1.2 mΩ S V 1.6 A Ciss Qg Qgs μA Vgs=10V, Id=2.6A Is Coss Crss 1 30 Vgs=0V, Vds=15V, f=1MHz Vgs=4.5V, Vds=15V Id=3.6A Qgd td(on) Vgs=10V, Vds=15V tr RL=15Ω, Id=1.0A td(off) Rgen=6Ω tf 4- 2 280 pF 40 20 pF pF 2.3 1.0 3.0 nC nC 0.6 10 12 15 20 nC ns ns 15 10 25 15 ns ns AFN2304A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM53404CA-S Typical Characteristics ■Typical electrical and thermal characteristics ©Alfa-MOS Technology Corp. Rev.B July 2010 www.alfa-mos.com Page 3 4- 3 AFN2304A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM53404CA-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev.B July 2010 www.alfa-mos.com Page 4 4- 4