UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z Power MOSFET 6.0A, 100V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC UTT6N10Z is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low gate charge. The UTC UTT6N10Z is usually used in DC-DC Converters. 1 SOT-223 FEATURES * RDS(on) < 108mΩ @ VGS = 10V, ID=3A * High Switching Speed SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT6N10ZG-AA3-R UTT6N10ZL-TN3-R UTT6N10ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tape Reel MARKING SOT-223 www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd TO-252 1 of 4 QW-R502-921.E UTT6N10Z Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 100 V ±20 V Continuous 6 A Drain Current Pulsed 24 A Single Pulsed Avalanche Energy (Note 3) 12 mJ Peak Diode Recovery dv/dt (Note 5) 4.2 V/ns Power Dissipation (TA=25°C) SOT-223 0.8 W PD (Note 1) 1.25 W TO-252 Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS ID IDM EAS dv/dt THERMAL CHARACTERISTICS PARAMETER Junction to Ambient (Note 1) Junction to Case SYMBOL SOT-223 TO-252 SOT-223 TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 150 100 12 7.5 UNIT °C/W °C/W °C/W °C/W 2 of 4 QW-R502-921.E UTT6N10Z Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-State Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS MIN TYP MAX UNIT ID=250µA, VGS=0V VDS=80V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 100 VDS=VGS, ID=250µA VGS=10V, ID=3A VGS=4.5V, ID=1A 1.0 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDD=50V, ID=1.3A Gate to Source Charge QGS IG=100µA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=0.5A, VGS=10V, R Turn-OFF Delay Time tD(OFF) GEN=25Ω Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Source Current Pulsed ISM Drain-Source Diode Forward Voltage VSD IS=6A, VGS=0V (Note 2) Reverse Recovery Time trr IS=6A, VGS=0V, dIF/dt=100A/µs (Note 1) Reverse Recovery Charge Qrr Notes: 1. θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where reference is defined as the solder mounting surface of the drain pins. θJC is guaranteed by design while θJA is determined by the user’s board deign. 2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 3. Starting TJ = 25°C, L =11mH, IAS =6A, VDD = 90V, VGS=10V. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 +10 -10 V µA µA µA 90 95 3.0 108 153 V mΩ mΩ 720 85 33 900 65 60 pF pF pF 28 3.9 5.3 30 50 280 80 nC nC nC ns ns ns ns 6 24 1.3 A A 0.8 V 70 ns 115 nC the case thermal 3 of 4 QW-R502-921.E UTT6N10Z Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) Drain Current, ID (µA) 300 200 150 100 50 0 200 150 100 50 0 25 50 75 100 0 0 125 3.6 Drain Current, ID (A) 3.0 VGS=10V, ID=3A 2.4 1.8 1.2 0.6 0 0 0.05 0.1 0.15 0.2 0.25 0.3 Drain to Source Voltage, VDS (V) Coutinuous Drain-Soarce Current, ISD (A) Drain-Source Breakdown Voltage, BVDSS (V) Drain-Source On-State Resistance Characteristics 0.5 1.0 1.5 2.0 2.5 3.0 Gate Threshold Voltage, VTH (V) 3.6 Coutinuous Drain-Soarce Current vs. Source to Drain Voltage 3.0 2.4 1.8 1.2 0.6 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-921.E