AON2705 30V P-Channel MOSFET with Schottky Diode General Description Product Summary The AON2705 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Top View VDS ID (at VGS=-10V) -30V -3.0A RDS(ON) (at VGS=-10V) < 108mΩ RDS(ON) (at VGS = -4.5V) < 165mΩ Typical ESD protection HBM Class 3A VKA 20V IF 2A VF (at IF=1A) <0.45V DFN 2x2 Bottom View D A S K K G S K G D A NC D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol MOSFET Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain Current A VGS TA=25°C -3 -2.4 Pulsed Drain Current B IDM Schottky reverse voltage Continuous Forward TA=25°C VKA Current A Pulsed Forward Current B TA=25°C Power Dissipation A Rev0: Aug 2012 1.5 t ≤ 10s Steady-State t ≤ 10s Steady-State V A 15 1.5 1.45 0.95 0.92 TJ, TSTG -55 to 150 -55 to 150 °C Symbol Typ 35 65 Max 45 85 Units °C/W °C/W 36 67 47 87 °C/W °C/W PD Junction and Storage Temperature Range Thermal Characteristics Parameter: MOSFET Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Parameter: Schottky Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A 20 2.5 IFM TA=70°C A -16 IF TA=70°C Units V V ±20 ID TA=70°C Schottky RθJA RθJA www.aosmd.com W Page 1 of 6 AON2705 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±16V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS, ID=-250µA -1.3 VGS=-10V, VDS=-5V -16 VGS=-10V, ID=-3A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=-5V, ID=-3A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C VGS=-4.5V, ID=-2.5A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Max VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz Units V VDS=-30V, VGS=0V IGSS ID(ON) Typ µA ±10 µΑ -1.8 -2.3 V 89 108 123 150 132 165 A mΩ mΩ 6 -0.8 S -1 V -1.25 A 180 pF 44 pF 25 pF 18.5 37 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4 6 nC Qg(4.5V) Total Gate Charge 2 3.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=-10V, VDS=-15V, ID=-3A VGS=-10V, VDS=-15V, RL=5Ω, RGEN=3Ω 0.6 nC 1 nC 8 ns 5 ns 18 ns 7 ns IF=-3A, dI/dt=100A/µs 10.5 Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs 3.5 ns nC SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1A 0.4 VR=5V VR=5V, TJ=125°C Irm Maximum reverse leakage current Irm Maximum reverse leakage current VR=16V VR=16V, TJ=125°C CT 10 0.1 20 Junction Capacitance VR=10V 34 trr Schottky Reverse Recovery Time IF=1A, dI/dt=100A/µs 11 Qrr Schottky Reverse Recovery Charge IF=1A, dI/dt=100A/µs 0.8 V 0.45 0.05 mA mA pF 14 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedance from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Aug 2012 www.aosmd.com Page 2 of 6 AON2705 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 8 -10V -4.5V VDS=-5V -4.0V -5.0V 6 6 -7.0V -ID(A) -ID (A) 125°C -3.5V 4 4 25°C 2 2 VGS=-3.0V 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 5 0 180 2 3 4 -VGS(Volts) Figure 2: Transfer Characteristics 5 1.6 Normalized On On-Resistance VGS=-4.5V 140 RDS(ON) (mΩ Ω) 1 100 VGS=-10V 60 20 VGS=-10V ID=-3A 1.4 1.2 VGS=-4.5V ID=-2.5A 1 0.8 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 300 ID=-3A 250 1E+00 125°C 125°C -IS (A) RDS(ON) (mΩ Ω) 200 150 1E-01 25°C 1E-02 100 25°C 1E-03 50 0 1E-04 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev 0: Aug 2012 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 Page 3 of 6 AON2705 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 300 VDS=-15V ID=-3A 250 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 200 150 100 Coss 2 50 Crss 0 0 0 1 2 3 4 5 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 10000 TJ(Max)=150°C TA=25°C RDS(ON) limited 1ms Power (W) -ID (Amps) 100µs 1.0 1000 10µs 10.0 100 10ms DC 0.1 10 10s TJ(Max)=150°C TA=25°C 1 0.0 0.01 0.1 1 -VDS (Volts) 1E-06 10 Zθ JA Normalized Transient Thermal Resistance 0.01 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 0.0001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=85°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Rev 0: Aug 2012 www.aosmd.com Page 4 of 6 AON2705 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 200 160 Capacitance (pF) IF (Amps) 125°C 1 25°C 120 80 40 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 0 VF (V) Figure 12: Schottky Forward Characteristics 5 10 15 20 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 10 0.42 Leakage Current (mA) 0.39 IF=1A VF (Volts) 0.36 0.33 IF=0.5A 0.30 VKA=20V 1 VKA=16V 0.1 0.27 0.24 0.01 Zθ JA Normalized Transient Thermal Resistance 0 25 50 75 100 125 Temperature (°C) Figure 14: Schottky Forward Drop vs. Junction Temperature 1 150 0 25 50 75 100 125 Temperature (°C) Figure 15: Schottky Leakage Current vs. Junction Temperature 150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=87°C/W 0.1 PD 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 16: Schottky Normalized Maximum Transient Thermal Impedance (Note E) Rev 0: Aug 2012 www.aosmd.com Page 5 of 6 AON2705 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd + DUT Qgs Vds Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 0: Aug 2012 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 6 of 6