VISHAY VBT2045C

New Product
VBT2045C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.33 V at IF = 5.0 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
TO-263AB
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Not recommended for PCB bottom side wave mounting
2
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
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VBT2045C
PIN 1
PIN 2
TYPICAL APPLICATIONS
K
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
45 V
IFSM
160 A
VF at IF = 10 A
0.41 V
TJ max.
150 °C
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
VBT2045C
UNIT
VRRM
45
V
20
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
Document Number: 89359
Revision: 26-Oct-10
SYMBOL
IF(AV)
A
10
IFSM
160
A
TJ, TSTG
- 40 to + 150
°C
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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New Product
VBT2045C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 5 A
TA = 25 °C
IF = 10 A
Instantaneous forward voltage per diode
VF (1)
IF = 5 A
TA = 25 °C
VR = 45 V
TYP.
MIN.
0.44
-
0.49
0.58
0.33
-
0.41
0.52
-
2000
μA
10
30
mA
IR (2)
TA = 125 °C
UNIT
V
TA = 125 °C
IF = 10 A
Reverse current per diode
SYMBOL
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VBT2045C
UNIT
3.0
per diode
Typical thermal resistance
°C/W
RθJC
per device
2.0
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-263AB
VBT2045C-E3/4W
PREFERRED P/N
1.38
4W
50/tube
Tube
TO-263AB
VBT2045C-E3/8W
1.38
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
24
6
20
5
D = 0.8
Average Power Loss (W)
Average Forward Rectified Current (A)
(TA = 25 °C unless otherwise noted)
16
12
8
4
0
100
D = 0.5
D = 0.3
4
D = 0.2
D = 1.0
3
D = 0.1
T
2
1
D = tp/T
tp
8
10
0
110
120
130
140
150
0
2
4
6
12
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89359
Revision: 26-Oct-10
New Product
VBT2045C
Vishay General Semiconductor
10 000
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.1
0.8
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
0.1
TA = 25 °C
0.01
40
60
80
1
0.1
0.01
0.001
20
Junction to Case
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
Document Number: 89359
Revision: 26-Oct-10
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.33 (8.38) MIN.
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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