VISHAY VFT3045CBP-M3-4W

New Product
VFT3045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.30 V at IF = 5.0 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
1
2
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
3
• Halogen-free according to IEC 61249-2-21 definition
VFT3045CBP
PIN 1
TYPICAL APPLICATIONS
PIN 2
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PIN 3
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
45 V
IFSM
200 A
VF at IF = 15 A
0.39 V
TOP max.
150 °C
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
per device
Maximum average forward rectified current (fig. 1)
per diode
SYMBOL
VFT3045CBP
UNIT
VRRM
45
V
IF(AV) (1)
30
A
15
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
200
A
Isolation voltage from termal to heatsink, t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TOP, TSTG
- 40 to + 150
°C
TJ (2)
≤ 200
°C
Junction temperature in DC forward current
without reverse bias, t ≤ 1 h
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Document Number: 89369
Revision: 27-Oct-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
New Product
VFT3045CBP
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 7.5 A
Instantaneous forward voltage per diode
TA = 25 °C
IF = 15 A
VF (1)
IF = 5 A
IF = 15 A
TA = 25 °C
VR = 45 V
Reverse current per diode
IR (2)
TA = 125 °C
MAX.
0.42
-
0.44
-
0.49
0.57
0.30
-
0.33
-
UNIT
V
TA = 125 °C
IF = 7.5 A
TYP.
0.39
0.48
-
2000
μA
17
50
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT3045CBP
UNIT
6.0
per diode
Typical thermal resistance
°C/W
RθJC
per device
4.0
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ITO-220AB
VFT3045CBP-M3/4W
1.76
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
9
D = 0.5
8
30
Average Power Loss (W)
Average Forward Rectified Current (A)
35
25
20
15
10
5
7
D = 0.2
6
5
D = 1.0
D = 0.1
4
T
3
2
D = tp/T
1
0
D = 0.8
D = 0.3
tp
0
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
16
18
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89369
Revision: 27-Oct-10
New Product
VFT3045CBP
Vishay General Semiconductor
100 000
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 100 °C
TA = 125 °C
1
TA = 25 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10 000
1000
100
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
0.7
1
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
Fig. 5 - Typical Junction Capacitance Per Diode
10
100
TA = 150 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
10
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
TA = 125 °C
10
TA = 100 °C
1
0.1
TA = 25 °C
0.01
40
80
60
1
0.1
0.01
0.001
20
Junction to Case
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.076 (1.93) REF.
45° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.671 (17.04)
0.651 (16.54)
PIN
1
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
3
7° REF.
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
Document Number: 89369
Revision: 27-Oct-10
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Document Number: 91000
Revision: 11-Mar-11
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