New Product VFT3045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES TMBS ® • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 1 2 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 3 • Halogen-free according to IEC 61249-2-21 definition VFT3045CBP PIN 1 TYPICAL APPLICATIONS PIN 2 For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PIN 3 MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 45 V IFSM 200 A VF at IF = 15 A 0.39 V TOP max. 150 °C Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode SYMBOL VFT3045CBP UNIT VRRM 45 V IF(AV) (1) 30 A 15 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 200 A Isolation voltage from termal to heatsink, t = 1 min VAC 1500 V Operating junction and storage temperature range TOP, TSTG - 40 to + 150 °C TJ (2) ≤ 200 °C Junction temperature in DC forward current without reverse bias, t ≤ 1 h Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Document Number: 89369 Revision: 27-Oct-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product VFT3045CBP Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 7.5 A Instantaneous forward voltage per diode TA = 25 °C IF = 15 A VF (1) IF = 5 A IF = 15 A TA = 25 °C VR = 45 V Reverse current per diode IR (2) TA = 125 °C MAX. 0.42 - 0.44 - 0.49 0.57 0.30 - 0.33 - UNIT V TA = 125 °C IF = 7.5 A TYP. 0.39 0.48 - 2000 μA 17 50 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VFT3045CBP UNIT 6.0 per diode Typical thermal resistance °C/W RθJC per device 4.0 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-220AB VFT3045CBP-M3/4W 1.76 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 9 D = 0.5 8 30 Average Power Loss (W) Average Forward Rectified Current (A) 35 25 20 15 10 5 7 D = 0.2 6 5 D = 1.0 D = 0.1 4 T 3 2 D = tp/T 1 0 D = 0.8 D = 0.3 tp 0 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 18 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89369 Revision: 27-Oct-10 New Product VFT3045CBP Vishay General Semiconductor 100 000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 100 °C TA = 125 °C 1 TA = 25 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 000 1000 100 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.7 1 Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 Fig. 5 - Typical Junction Capacitance Per Diode 10 100 TA = 150 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 10 Reverse Voltage (V) Instantaneous Forward Voltage (V) TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 40 80 60 1 0.1 0.01 0.001 20 Junction to Case 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AB 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.076 (1.93) REF. 45° REF. 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.671 (17.04) 0.651 (16.54) PIN 1 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 3 7° REF. 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) Document Number: 89369 Revision: 27-Oct-10 0.191 (4.85) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.110 (2.79) 0.100 (2.54) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1