New Product VFT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS ® • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 2 3 TYPICAL APPLICATIONS VFT30L60C PIN 1 For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PIN 2 PIN 3 MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 60 V IFSM 200 A VF at IF = 15 A 0.45 V TJ max. 150 °C Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) SYMBOL VFT30L60C UNIT VRRM 60 V 30 per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IF(AV) A 15 IFSM 200 A dV/dt 10 000 V/μs Isolation voltage from termal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG - 40 to + 150 °C Voltage rate of change (rated VR) Document Number: 89378 Revision: 07-Dec-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product VFT30L60C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5.0 A IF = 7.5 A TA = 25 °C IF = 15 A Instantaneous forward voltage per diode VF (1) IF = 5.0 A IF = 15 A TA = 25 °C VR = 60 V Reverse current per diode IR (2) TA = 125 °C MAX. 0.43 - 0.46 - 0.51 0.60 0.32 - 0.36 - 0.45 0.57 - 4.0 27 110 UNIT V TA = 125 °C IF = 7.5 A TYP. mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VFT30L60C UNIT 5.0 per diode Typical thermal resistance °C/W RθJC per device 3.5 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N ITO-220AB UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.75 4W 50/tube Tube VFT30L60C-E3/4W RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 D = 0.5 9 30 Average Power Loss (W) Average Forward Rectified Current (A) 35 25 20 15 10 5 7 D = 0.2 6 D = 1.0 5 D = 0.1 4 T 3 2 1 0 D = 0.8 D = 0.3 8 D = tp/T tp 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Dissipation Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89378 Revision: 07-Dec-10 New Product VFT30L60C Vishay General Semiconductor 10 000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0.8 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Transient Thermal Impedance Per Diode 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 1000 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 40 60 80 1 0.1 0.01 0.001 20 Junction to Case 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AB 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.076 (1.93) REF. 45° REF. 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.671 (17.04) 0.651 (16.54) PIN 1 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 3 7° REF. 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) Document Number: 89378 Revision: 07-Dec-10 0.191 (4.85) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.110 (2.79) 0.100 (2.54) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1