New Product VFT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS ® • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 1 2 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 3 • Halogen-free according to IEC 61249-2-21 definition VFT1080C PIN 1 TYPICAL APPLICATIONS PIN 2 For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PIN 3 MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2x5A VRRM 80 V IFSM 80 A VF at IF = 5 A 0.57 V TJ max. 150 °C Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) SYMBOL VFT1080C UNIT VRRM 80 V per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load 10 IF(AV) A 5 IFSM 80 A dV/dt 10 000 V/μs Isolation voltage from termal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C Voltage rate of change (rated VR) Document Number: 89258 Revision: 18-Nov-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product VFT1080C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 3 A Instantaneous forward voltage per diode TA = 25 °C IF = 5 A VF (1) IF = 3 A TA = 25 °C VR = 80 V IR (2) TA = 125 °C TYP. MAX. UNIT 0.54 - 0.63 0.72 0.49 - 0.57 0.66 12 400 μA 6 15 mA V TA = 125 °C IF = 5 A Reverse current per diode SYMBOL Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VFT1080C UNIT 6.5 per diode Typical thermal resistance °C/W RθJC per device 5.5 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N ITO-220AB UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.70 4W 50/tube Tube VFT1080C-M3/4W RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 4.0 D = 0.8 Resistive or Inductive Load 3.5 10 Average Power Loss (W) Average Forward Current (A) 12 8 6 4 2 3.0 D = 0.2 2.5 D = 0.5 D = 0.3 D = 1.0 D = 0.1 2.0 T 1.5 1.0 0.5 0 D = tp/T tp 0 0 25 50 75 100 125 150 175 0 1 2 3 4 5 6 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Dissipation Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89258 Revision: 18-Nov-10 New Product VFT1080C Vishay General Semiconductor Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TA = 150 °C TA = 125 °C 10 1 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 0.2 0.6 0.4 0.8 1.0 1.4 1.2 Junction to Case 1 0.01 0.1 10 1 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Transient Thermal Impedance 100 1000 TA = 150 °C Junction Capacitance (pF) Instantaneous Reverse Current (mA) 0 10 10 TA = 125 °C TA = 100 °C 1 0.1 0.01 TA = 25 °C 0.001 20 30 40 50 60 70 80 100 10 0.1 100 90 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1 100 10 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AB 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.076 (1.93) REF. 45° REF. 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.671 (17.04) 0.651 (16.54) PIN 1 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 3 7° REF. 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) Document Number: 89258 Revision: 18-Nov-10 0.191 (4.85) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.110 (2.79) 0.100 (2.54) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1