Single P-channel MOSFET ELM3F401JA-S ■General description ■Features ELM3F401JA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-8A Rds(on) < 20mΩ (Vgs=-10V) Rds(on) < 35mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V Symbol Vds Gate-source voltage Vgs ±20 V Id -8.0 -6.3 A 4 Idm Ias Eas -80 -29 42 A A mJ 3 Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Avalanche current Avalanche energy L=0.1mH Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range 2.0 1.2 -55 to 150 Pd Tj, Tstg W °C ■Thermal characteristics Parameter Maximum junction-to-case Symbol Rθjc Maximum junction-to-ambient Rθja ■Pin configuration 7 6 5 • 1 2 3 Max. 6 Unit °C/W Note 62 °C/W 5 ■Circuit PDFN-3x3(TOP VIEW) 8 Typ. 4 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4-1 D G S Single P-channel MOSFET ELM3F401JA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Symbol Condition BVdss Id=-250μA, Vgs=0V Idss Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note -30 Vds=-24V, Vgs=0V -1 Vds=-20V, Vgs=0V Ta=125°C -10 Gate-body leakage current Gate threshold voltage Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=-250μA -1.0 On state drain current Id(on) Vds=-5V, Vgs=-10V -80 Static drain-source on-resistance Rds(on) If=-9A, Vgs=0V Coss Crss Gate resistance SWITCHING PARAMETERS Total gate charge (Vgs=-10V) Total gate charge (Vgs=-4.5V) Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge 1 S 1 -1 V 1 -25 A 4 35 Vsd Output capacitance Reverse transfer capacitance mΩ 23 23 Diode forward voltage Is nA V 1 20 Gfs μA A 15 Forward transconductance Ciss -1.5 -100 -3.0 Vgs=-10V, Id=-9A Vgs=-4.5V, Id=-7A Vds=-5V, Id=-9A Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance V 1300 pF 212 200 pF pF 2.8 Ω 29.4 nC 2 15.6 3.8 nC nC 2 2 Qgd 7.8 nC 2 td(on) 20 ns 2 tr Vgs=-10V, Vds=-15V td(off) Id=-9A, Rgen=6Ω 12 55 ns ns 2 2 36 14.3 4.2 ns ns nC 2 Rg Vgs=0V, Vds=-15V f=1MHz Vgs=0V, Vds=0V, f=1MHz Qg Qg Qgs tf trr Qrr Vds=-15V, Id=-9A If=-9A, dlf/dt=100A/μs NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Package limitation current is 30A. 5. The value of Rθja is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with Ta =25°C. The value in any given application depends on the user’s specific board design. 4-2 Single P-channel MOSFET P-Channel Logic Level Enhancement Mode P2003EEAA ELM3F401JA-S PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free ■Typical electrical and thermal characteristics NIKO-SEM Output Characteristics 24 VGS=-3.5V 18 12 VGS=-2.5V 6 0 24 18 12 25� � 6 0 0 1 2 3 4 -VDS, Drain-To-Source Voltage(V) 5 0 1 -20� � 2 3 4 1400 6 4 1200 CISS 1000 800 600 400 2 COSS CRSS 200 0 0.04 5 Capacitance Characteristic 1600 VDS=-15V ID =-9A 8 � 125� -VGS, Gate-To-Source Voltage(V) Gate charge Characteristics 10 -VGS , Gate-To-Source Voltage(V) -ID, Drain-To-Source Current(A) VGS=-10V Transfer Characteristics 30 C , Capacitance(pF) -ID, Drain-To-Source Current(A) 30 0 6 12 18 24 Qg , Total Gate Charge(nC) 0 30 On-Resistance VS Gate-To--Source 0 5 10 15 20 25 -VDS, Drain-To-Source Voltage(V) 30 On-Resistance Resistance VS Drain Current 0.1 RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) 0.035 0.03 VGS=-4.5V 0.025 0.02 VGS=-10V 0.015 0.01 0.005 0 0 6 12 18 24 0.08 0.06 0.04 0.02 0 30 -VGS, Gate-To-Source Source Voltage(V) ID=-9A 2 4 6 8 10 -ID , Drain-To--Source Current(A) REV 0.9 3 4-3 Oct-05-2011 Single P-channel MOSFET P-Channel Logic Level Enhancement Mode ELM3F401JA-S Field Effect Transistor NIKO-SEM Source-Drain Diode Forward Voltage 100 1.8 -IS , Source Current(A) Normalized Drain to Source ON-Resistance PDFN 3x3P Halogen-Free & Lead-Free On-Resistance VS Temperature 2.0 1.6 1.4 1.2 1.0 0.8 0.4 10 125� � 25� � 1 VGS=-10V ID=-9A 0.6 -50 -25 0 25 50 75 100 125 0 150 0.0 0.2 0.4 Safe Operating Area 1.0 1.2 1.4 50 10 1 0.8 Single Pulse Maximum Power Dissipation Power(W) 100 0.6 -VSD, Source-To-Drain Voltage(V) TJ , Junction Temperature(˚C) Single Pulse RJA = 62˚C/W TA=25˚C 40 30 1ms Operation in This Area is Limited by RDS(ON) 10ms 20 100ms NOTE : 1.VGS= -10V 2.TA=25˚C 3.RJA = 62˚C/W 4.Single Pulse 0.1 0.01 0.1 1 10 0 0.001 100 -VDS, Drain-To-Source Voltage(V) Transient Thermal Resistance 10 DC 0.01 0.1 1 10 100 Single Pulse Time(s) Transient Thermal Response Curve 10 r(t) , Normalized Effective -ID , Drain Current(A) P2003EEAA 1 Duty cycle=0.5 0.2 0.1 Notes 0.1 0.05 1.Duty cycle, D= t1 / t2 2.RthJA = 62 �/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.02 0.01 single pulse 0.01 0.0001 0.001 0.01 0.1 1 T1 , Square Wave Pulse Duration[sec] REV 0.9 4 4-4 10 100 Oct-05-2011