Single P-channel MOSFET ELM321604A-S ■General description ■Features ELM321604A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-40V Id=-43A Rds(on) < 16mΩ (Vgs=-10V) Rds(on) < 20mΩ (Vgs=-7V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds -40 V Gate-source voltage Vgs ±20 -43 V Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current Avalanche current Avalanche energy L=0.1mH Tc=25°C Power dissipation Idm Ias -40.8 A Eas 83 50 mJ Pd Tc=70°C Junction and storage temperature range A -34 -130 Tj, Tstg A 3 W 32 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Steady-state Steady-state Symbol Rθjc Rθja ■Pin configuration Typ. Max. 2.5 75.0 Unit °C/W °C/W Note ■Circuit TO-252-3(TOP VIEW) D TAB 2 1 Pin No. 1 2 Pin name GATE DRAIN 3 SOURCE 3 4-1 G S Single P-channel MOSFET ELM321604A-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Symbol Condition BVdss Id=-250μA, Vgs=0V Idss Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note -40 Vds=-32V, Vgs=0V -1 Vds=-30V, Vgs=0V Ta=125°C -10 Gate-body leakage current Gate threshold voltage Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=-250μA -1.5 On state drain current Id(on) Vds=-5V, Vgs=-10V -130 Static drain-source on-resistance Rds(on) mΩ 16 24 20 mΩ S Diode forward voltage Vsd If=-25A, Vgs=0V Coss Crss Is Rg Vgs=0V, Vds=-15V f=1MHz Gate resistance SWITCHING PARAMETERS Total gate charge Qg Gate-source charge Gate-drain charge Qgs Qgd Turn-on delay time Turn-on rise time td(on) Turn-off delay time Turn-off fall time td(off) Id=-1A, Rgen=6Ω tf Body diode reverse recovery time Body diode reverse recovery charge A 16 Gfs Output capacitance Reverse transfer capacitance tr trr Qrr nA V 13 Forward transconductance Ciss -2.2 ±100 -3.0 μA Vgs=-10V, Id=-25A Vgs=-7V, Id=-15A Vds=-5V, Id=-25A Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance V Vgs=0V, Vds=0V, f=1MHz Vgs=-10V, Vds=-20V Id=-25A Vgs=-10V, Vds=-20V If=-20A, dlf/dt=100A/μs NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4-2 -1.3 V -43 A 1 1 1 1 2350 pF 480 310 pF pF 4.3 Ω 42 nC 2 9 10 nC nC 2 2 15 ns 2 43 ns 2 62 50 ns ns 2 2 43 31 ns nC Single P-channel MOSFET ELM321604A-S ■Typical electrical and thermal characteristics 4-3 Single P-channel MOSFET ELM321604A-S � � � � � � � � � 4-4