Single P-channel MOSFET ELM34V555A-N ■General description ■Features ELM34V555A-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 28mΩ (Vgs=-10V) Rds(on) < 45mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Symbol Vds Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Avalanche current Avalanche energy L=0.1mH Tc=25°C Tc=70°C Power dissipation Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V Junction and storage temperature range Vgs ±20 V Id -6.0 -4.7 A Idm Ias Eas -24 -19.3 18.6 A A mJ Pd Tj, Tstg 1.7 1.1 -55 to 150 3 W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 72 Unit °C/W Note 4 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 SOURCE GATE 5 6 DRAIN DRAIN 7 8 DRAIN DRAIN 4-1 D G S Single P-channel MOSFET ELM34V555A-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage Static drain-source on-resistance Condition Vds=-20V, Vgs=0V, Ta=55°C -10 Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=-250μA Vgs=-10V, Id=-6A Rds(on) Vgs=-4.5V, Id=-6A Vds=-5V, Id=-6A Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is If=-6A, Vgs=0V Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge V -1 Gfs Gate-source charge Gate-drain charge Turn-on delay time -30 Vds=-24V, Vgs=0V Forward transconductance Gate resistance SWITCHING PARAMETERS Total gate charge Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note -0.8 μA ±100 nA -1.5 22 -2.5 28 V 32 45 mΩ 1 S 1 V A 1 22 -1.0 -10 Vgs=0V, Vds=-15V, f=1MHz 846 120 106 pF pF pF Vgs=0V, Vds=0V, f=1MHz 11 Ω 20.0 2.4 4.8 nC nC nC 2 2 2 td(on) tr Vgs=-10V, Vds=-15V 10.4 7.8 ns ns 2 2 td(off) Id=-6A, Rgen=6Ω 22.0 ns 2 7.0 ns 2 12.2 3.5 ns nC Rg Qg Qgs Qgd Vgs=-10V, Vds=-15V Id=-6A tf trr Qrr If=-6A, dIf/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. The value of Rθja is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with Ta =25°C. 4-2 Single P-channel MOSFET SOP-8 Halogen-free & Lead-Free ■Typical electrical and thermal characteristics Output Characteristics Transfer Characteristics 24 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-3.5V 18 -ID, Drain-To-Source Current(A) -ID, Drain-To-Source Current(A) 24 VGS=-3V 12 6 VGS=-2.5V 0 0 1 2 3 4 5 18 12 6 25℃ 125℃ 0 6 0 -VDS, Drain-To-Source Voltage(V) Gate charge Characteristics 2 3 4 5 Capacitance Characteristic 1000 VDS=-15V ID=-6A 900 8 C , Capacitance(pF) -VGS , Gate-To-Source Voltage(V) 1 -20℃ -VGS, Gate-To-Source Voltage(V) 10 6 4 CISS 800 700 600 500 400 300 200 2 COSS 100 0 0 4 8 12 16 0 20 CRSS 0 Qg , Total Gate Charge(nC) 10 15 20 25 30 On-Resistance VS Drain Current On-Resistance VS Gate-To-Source 0.05 RDS(ON)ON-Resistance(OHM) 0.08 0.06 0.04 ID=-6A 0.02 0 5 -VDS, Drain-To-Source Voltage(V) 0.1 RDS(ON)ON-Resistance(OHM) PV555BA P-Channel Logic Level Enhancement Mode ELM34V555A-N Field Effect Transistor NIKO-SEM 2 4 6 8 0.04 VGS=-4.5V 0.03 VGS=-10V 0.02 0.01 0 10 -VGS, Gate-To-Source Voltage(V) 0 3 6 9 12 15 -ID , Drain-To-Source Current(A) REV 0.9 E-29-3 3 4-3 Single P-channel MOSFET SOP-8 Halogen-free & Lead-Free On-Resistance VS Temperature Source-Drain Diode Forward Voltage 2.0 100 1.8 -IS , Source Current(A) Normalized Drain to Source ON-Resistance PV555BA P-Channel Logic Level Enhancement Mode ELM34V555A-N Field Effect Transistor NIKO-SEM 1.6 1.4 1.2 1.0 0.8 150℃ 25℃ 1 VGS=-10V ID=-6A 0.6 0.4 10 -50 -25 0 25 50 75 100 125 0.1 150 0.0 0.2 0.4 TJ , Junction Temperature(˚C) 0.8 1.0 25 10 100ms NOTE : 1.VGS= -10V 2.TA=25˚C 3.RθJA = 72˚C/W 4.Single Pulse 0.1 15 Power(W) 1ms 10ms 0.01 Single Pulse RθJA = 72˚C/W TA=25˚C 20 1 5 DC 1 10 0 0.001 100 0.01 -VDS, Drain-To-Source Voltage(V) 0.1 1 10 100 Single Pulse Time(s) Transient Thermal Response Curve r(t) , Normalized Effective 10 Transient Thermal Resistance -ID , Drain Current(A) ↓ 0.1 1.4 Single Pulse Maximum Power Dissipation Operation in This Area is Limited by RDS(ON) 10 1.2 -VSD, Source-To-Drain Voltage(V) Safe Operating Area 100 0.6 Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 1 Notes 0.1 1.Duty cycle, D= t1 / t2 2.RthJA = 72 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 T1 , Square Wave Pulse Duration[sec] REV 0.9 E-29-3 4 4-4