Single P-channel MOSFET ELM14405AA-N ■General description ■Features ELM14405AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A (Vgs=-10V) Rds(on) < 50mΩ (Vgs=-10V) Rds(on) < 85mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V ±20 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current Pulsed drain current -6.0 -5.1 -30 Id Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg 3.0 2.1 -55 to 150 A 1 A 2 W 1 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Symbol t≤10s Steady-state Rθja Maximum junction-to-lead Steady-state Rθjl ■Pin configuration Typ. 31 59 Max. 40 75 Unit °C/W °C/W Note 16 24 °C/W 3 1 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4-1 D G S Single P-channel MOSFET ELM14405AA-N ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Static drain-source on-resistance Rds(on) Vgs=-10V, Id=-6A Forward transconductance Gfs Diode forward voltage Vsd Is=-1A, Vgs=0V Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Crss Rg Qg Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge -1 -5 μA ±100 nA -1.0 -30 -1.8 -3.0 V A 40 50 Ta=125°C 55 65 9.5 70 85 6.0 -0.78 -1.00 V -4.2 A 840 pF pF Is Input capacitance Output capacitance Total gate charge (4.5V) Gate-source charge V Ta=55°C Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Vgs=-4.5V, Id=-4A Vds=-5V, Id=-6A Max. body-diode continuous current DYNAMIC PARAMETERS -30 Vgs=0V, Vds=-15V, f=1MHz 700 112 Vgs=0V, Vds=0V, f=1MHz 78 10 Vgs=-10V, Vds=-15V, Id=-6A 14.7 7.6 2.0 15 18.0 mΩ mΩ S pF Ω nC nC nC 3.8 8.6 nC ns Vgs=-10V, Vds=-15V 5.0 ns td(off) RL=2.5Ω, Rgen=3Ω tf trr If=-6A, dIf/dt=100A/μs 28.2 13.5 24.0 ns ns ns Qrr If=-6A, dIf/dt=100A/μs NOTE : 14.7 30.0 nC 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single P-channel MOSFET ELM14405AA-N ■Typical electrical and thermal characteristics 20 -10V 10 -6V -5V -4.5V -4V 10 -Id(A) -Id (A) Vds=-5V 8 15 -3.5V 5 Vgs=-3V 0 0.00 2.00 3.00 4.00 4 125°C 2 -2.5V 1.00 6 25°C 0 5.00 0 1 3 4 1.6 80 Normalized On-Resistance Rds(on) (m� ) 100 Vgs=-4.5V 60 Vgs=-10V 40 20 1.4 Vgs=-10V Vgs=-4.5V 1.2 1 Id=-5A 0.8 0 2 4 6 8 10 0 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 160 140 1E+00 Id=-5A 120 1E-01 100 1E-02 -Is (A) Rds(on) (m� ) 2 -Vgs(Volts) Figure 2: Transfer Characteristics -Vds (Volts) Figure 1: On-Region Characteristics 125°C 125°C 1E-03 MARKET. APPLICATIONS OR USES AS CRITICAL 80 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER 25°C COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN 1E-04 60 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25°C FUNCTIONS WITHOUT NOTICE. 40 AND RELIABILITY 1E-05 1E-06 20 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.2 Single P-channel MOSFET ELM14405AA-N 10 1200 Vds=-15V Id=-6A 9 8 1000 Capacitance (pF) -Vgs (Volts) 7 6 5 4 3 2 Ciss 800 600 400 Coss 200 1 0 0 2 4 6 8 10 12 14 Crss 0 16 0 -Qg (nC) Figure 7: Gate-Charge Characteristics Tj(max)=150°C Ta=25°C 1ms 10ms DC 20 0 0.001 0.1 1 10 100 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z�ja Normalized Transient Thermal Resistance 30 10 10s 10 25 30 100�s 1s 0.1 20 Tj(max)=150°C Ta=25°C 10�s 0.1s 1 15 40 Rds(on) limited 10 10 -Vds (Volts) Figure 8: Capacitance Characteristics Power (W) -Id (Amps) 100 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL Pd COMPONENTS 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4