AO3703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS (V) = -20V ID = -2.7 A (VGS = -10V) RDS(ON) < 97mΩ (VGS = -4.5V) RDS(ON) < 130mΩ (VGS = -2.5V) RDS(ON) < 190mΩ (VGS = -1.8V) The AO3703 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO3703 is Pb-free (meets ROHS & Sony 259 specifications). AO3703L is a Green Product ordering option. AO3703 and AO3703L are electrically identical. SCHOTTKY VDS (V) = 20V, I F = 1A, VF<[email protected] SOT-23-5 D K S A Top View G S A 1 2 3 5 D 4 K G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C ID Continuous Drain Current A TA=70°C IDM Pulsed Drain Current B VKA Schottky reverse voltage TA=25°C IF Continuous Forward Current A TA=70°C IFM Pulsed Forward Current B TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient Maximum Junction-to-Lead C A Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. MOSFET -20 ±8 -2.7 -2.1 -10 Schottky Units V V A PD 1.14 0.72 20 2 1 10 0.92 0.59 TJ, TSTG -55 to 150 -55 to 150 °C Typ Max Units Symbol RθJA RθJL 80.3 110 117 58.5 150 80 V A W °C/W AO3703 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) ID(ON) Gate Threshold Voltage On state drain current RDS(ON) gFS VSD IS Conditions Min ID=-250µA, VGS=0V VDS=-16V, VGS=0V -20 VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-2.7A -0.3 -10 TJ=125°C VGS=-2.5V, ID=-2A VGS=-1.8V, ID=-1A Forward Transconductance VDS=-5V, ID=-2.7A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm Maximum reverse leakage current CT trr Qrr Junction Capacitance Schottky Reverse Recovery Time Schottky Reverse Recovery Charge VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-2.7A VGS=-4.5V, VDS=-10V, RL=2.8Ω, RGEN=3Ω IF=-2.7A, dI/dt=100A/µs IF=-2.7A, dI/dt=100A/µs 4 Max Units V TJ=55°C Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Typ -0.6 76 111 101 134 7 -0.78 -1 -5 ±100 -1 µΑ nA V A 97 135 130 190 mΩ mΩ -1 -2 S V A mΩ 540 72 49 12 pF pF pF Ω 6.1 0.6 1.6 10 12 44 22 21 7.5 nC nC nC ns ns ns ns IF=0.5A VR=16V VR=16V, T J=125°C 0.39 VR=10V IF=1A, dI/dt=100A/µs IF=1A, dI/dt=100A/µs 34 5.2 0.8 ns nC 0.5 0.1 20 V mA pF 10 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev0: July 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICA COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO3703 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 15 -4.5V -3.0V VDS=-5V -2.5V -8V 4 10 -ID(A) -ID (A) -2.0V 2 5 125°C VGS=-1.5V 25°C 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 5 0 200 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics 2 1.8 VGS=-2.5V Normalized On-Resistance VGS=-1.8V RDS(ON) (mΩ) 0.5 150 VGS=-2.5V 100 VGS=-4.5V 50 0 2 4 1.6 VGS=-1.8V 1.4 VGS=-4.5V 1.2 1 0.8 6 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 200 1E+01 1E+00 1E-01 -IS (A) RDS(ON) (mΩ) ID=-2.7A 150 125°C 100 25°C 125°C 1E-02 25°C 1E-03 1E-04 1E-05 50 1E-06 0 2 4 6 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3703 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VDS=-10V ID=-2.7A Capacitance (pF) -VGS (Volts) 4 3 2 1 Ciss 600 400 Crss 200 Coss 0 0 2 4 6 0 8 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 20 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 100µs 15 10µs 10.0 Power (W) -ID (Amps) 5 1ms RDS(ON) limited 0.1s 10ms 1.0 1s 10 5 10s DC 0.1 0.1 1 10 0 0.001 100 -VDS (Volts) ZθJA Normalized Transient Thermal Resistance 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.1 Ton RθJA=110°C/W 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000