Single N-channel MOSFET ELM14404AA-N ■General description ■Features ELM14404AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=30V Id=8.5A (Vgs=10V) Rds(on) < 24mΩ (Vgs=10V) Rds(on) < 30mΩ (Vgs=4.5V) Rds(on) < 48mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 30 V ±12 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current Pulsed drain current 8.5 7.1 60 Id Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg 3.0 A 1 A 2 W 2.1 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 31 Max. 40 Unit °C/W 59 16 75 24 °C/W °C/W Note 1 3 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. Pin name 1 2 3 SOURCE SOURCE SOURCE 4 5 6 GATE DRAIN DRAIN 7 8 DRAIN DRAIN 4-1 D G S Single N-channel MOSFET ELM14404AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Rds(on) Gfs Vsd 0.002 1.000 5.000 μA 100 nA 1.0 1.4 V A 20.5 24.0 30.0 36.0 25.0 40.0 30.0 48.0 mΩ mΩ 1.00 S V 4.3 A 1030 pF 97 71 1.4 3.6 pF pF Ω 9.70 12.00 nC Ta=55°C 0.7 40 Ta=125°C Vgs=4.5V, Id=8.5A Vgs=2.5V, Id=5A Vds=5V, Id=5A Is=1A, Vgs=0V Ciss Coss Crss Rg Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd Body diode reverse recovery time Body diode reverse recovery charge V 10 16 0.71 Is Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Turn-on rise time Turn-off delay time Turn-off fall time 30 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Vgs=10V, Id=8.5A Static drain-source on-resistance Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit 857 Vgs=0V, Vds=15V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Qg Vgs=4.5V, Vds=15V, Id=8.5A 1.63 3.10 mΩ nC nC td(on) 3.3 5.0 ns tr Vgs=10V, Vds=15V td(off) RL=1.8Ω, Rgen=6Ω 4.7 26.0 7.0 39.0 ns ns 4.1 15.0 8.6 6.2 20.0 12.0 ns ns nC tf trr Qrr If=5A, dIf/dt=100A/μs If=5A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single N-channel MOSFET ELM14404AA-N ■Typical electrical and thermal characteristics 30 20 10V 3V 25 2.5V Id(A) 20 Id (A) Vds=5V 16 4.5V 15 12 125°C 8 10 25°C 2V 4 5 Vgs=1.5V 0 0 0 1 2 3 4 5 0 Vds (Volts) Fig 1: On-Region Characteristics 1.5 2 2.5 3 Normalized On-Resistance 1.8 50 Rds(on) (m� ) 1 Vgs(Volts) Figure 2: Transfer Characteristics 60 Vgs=2.5V 40 30 Vgs=4.5V 20 Vgs=10V 10 1.6 Vgs=4.5V 1.4 Vgs=10V 1.2 Vgs=2.5V 1 0.8 0 5 10 15 20 0 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 1.0E+01 90 1.0E+00 80 70 25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 Id=5A 1.0E-01 125°C 60 Is (A) Rds(on) (m� ) 0.5 50 125°C 1.0E-02 1.0E-03 25°C 40 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER 1.0E-04 MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN 30 25°C 1.0E-05 THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES 20 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 Single N-channel MOSFET ELM14404AA-N 5 1200 Capacitance (pF) 4 Vgs (Volts) 1400 Vds=15V Id=8.5A 3 2 1000 600 400 1 0 2 4 6 8 10 0 12 0 Qg (nC) Figure 7: Gate-Charge Characteristics Power (W) 10ms 0.1s 1.0 1s 10s DC 1 10 100 Z�ϕα Normalized Transient Thermal Resistance 30 30 20 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Vds (Volts) D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=40°C/W 25 Tj(max)=150°C Ta=25°C 0 0.001 Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 20 10 0.1 0.1 15 40 1ms 10.0 10 50 Tj(max)=150°C Ta=25°C 100�s 5 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Rds(on) limited Crss Coss 200 0 Id (Amps) Ciss 800 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT OR USES AS CRITICAL D 0.1 HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.PAPPLICATIONS COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN TonIMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO T Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4