Single P-channel MOSFET ELM549407A-N ■General description ■Features ELM549407A-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-60V Id=-4.6A Rds(on) < 100mΩ (Vgs=-10V) Rds(on) < 120mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Symbol Vds Vgs Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Ta=25°C. Unless otherwise noted. Limit Unit -60 V ±20 V -4.6 -3.8 -20 Id Pulsed drain current Idm Tc=25°C Power dissipation Junction and storage temperature range A 2.8 Pd Tc=70°C A W 1.8 - 55 to 150 Tj, Tstg °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 62.5 Unit °C/W ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. Pin name 1 2 SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 DRAIN DRAIN 8 DRAIN 5-1 DDDD G S S S Single P-channel MOSFET ELM549407A-N ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-48V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V -60 Ta=85°C Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Gfs Vsd V -0.8 -20 ±100 nA -2.5 V A 88 100 Vgs=-4.5V, Id=-3.8A Vds=-15V, Id=-3.2A Is=-2A, Vgs=0V 98 12 -0.8 120 Ciss Qg Qgs μA Vgs=-10V, Id=-4.6A Is Coss Crss -1 -20 Vgs=0V, Vds=-30V, f=1MHz Vgs=-10V, Vds=-30V, Id=-4A Qgd td(on) Vgs=-10V, Vds=-30V tr RL=7.5Ω, Id=-3.8A td(off) Rgen=3Ω tf 5-2 mΩ -1.2 S V -2 A 900 pF 90 40 pF pF 12.0 2.5 20.0 nC nC 3.5 10 6 20 10 nC ns ns 30 12 45 25 ns ns AFP9407 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET Single P-channel MOSFET ELM549407A-N Typical Characteristics ■Typical electrical and thermal characteristics ©Alfa-MOS Technology Corp. Rev.A Mar. 2011 www.alfa-mos.com Page 3 5-3 AFP9407 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET Single P-channel MOSFET ELM549407A-N Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Mar. 2011 www.alfa-mos.com Page 4 5-4 AFP9407 Alfa-MOS 60V P-Channel Technology Single P-channel MOSFET Enhancement Mode MOSFET ELM549407A-N Typical Characteristics ■Test circuit and waveform ©Alfa-MOS Technology Corp. Rev.A Mar. 2011 www.alfa-mos.com Page 5 5-5