Single N-channel MOSFET ELM53406CA-S ■General description ■Features ELM53406CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • ■Maximum absolute ratings Parameter Symbol Vds Vgs Drain-source voltage Gate-source voltage Ta=25°C Continuous drain current(Tj=150°C) Vds=60V Id=3.6A (Vgs=10V) Rds(on) < 70mΩ (Vgs=10V) Rds(on) < 78mΩ (Vgs=4.5V) Ta=25°C. Unless otherwise noted. Limit Unit 60 V ±20 V 3.6 Id Ta=70°C Pulsed drain current Idm Tc=25°C Power dissipation 10 1.25 Pd Tc=70°C Junction and storage temperature range A 2.8 A 0.80 - 55 to 150 Tj, Tstg W °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Rθja ■Pin configuration Typ. Max. Unit 120 °C/W ■Circuit D SOT-23(TOP VIEW) 3 1 2 Pin No. 1 Pin name GATE 2 3 SOURCE DRAIN G S 5- 1 Single N-channel MOSFET ELM53406CA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=48V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Gfs Vsd 60 V Ta=85°C 1.0 6 ±100 nA 2.0 V A 55 70 Vgs=4.5V, Id=2.8A Vds=15V, Id=3.2A Is=2.5A, Vgs=0V 60 15 0.85 78 Ciss Qg Qgs μA Vgs=10V, Id=3.6A Is Coss Crss 1 10 Vgs=0V, Vds=30V, f=1MHz Vgs=4.5V, Vds=30V Id=3.2A Qgd td(on) Vgs=10V, Vds=30V tr RL=12Ω, Id=2.5A td(off) Rgen=1Ω tf 5- 2 mΩ 1.20 S V 1.6 A 400 pF 40 20 pF pF 6.0 1.5 12.0 nC nC 1.2 8 10 15 20 nC ns ns 25 10 40 20 ns ns AFN2376 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM53406CA-S Typical Characteristics ■Typical electrical and thermal characteristics ©Alfa-MOS Technology Corp. Rev.A Mar. 2012 www.alfa-mos.com Page 3 5- 3 AFN2376 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM53406CA-S Typical Characteristics Typical ©Alfa-MOS Technology Corp. Rev.A Mar. 2012 www.alfa-mos.com Page 4 5- 4 AFN2376 Alfa-MOS 60V N-Channel Enhancement Mode MOSFET Technology Single N-channel MOSFET ELM53406CA-S Characteristics ■Test circuit and waveform ©Alfa-MOS Technology Corp. Rev.A Mar. 2012 www.alfa-mos.com Page 5 5- 5